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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1216T-TL-H

Name: 2SB1216T-TL-H
Brand: onsemi
SKU: 2SB1216T-TL-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1216T-TL-H

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SB1216T-TL-H.pdf

Description:: TRANS PNP 100V 4A TP-FA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1216T-TL-H from onsemi is a PNP bipolar junction transistor rated for −100 V V_CEO, −4 A I_C, and 20 W P_C at T_C = 25°C, featuring low V_CE(sat) of −400 mV (max) at I_C = −2 A / I_B = −0.2 A, f_T = 180 MHz, and DPAK (TP-FA) package. It serves as a high-current switching device in relay drivers and DC-DC converters.

For engineers reviewing the 2SB1216T-TL-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, −100 V breakdown rating, 180 MHz gain-bandwidth, fast switching (t_on = 100 ns, t_f = 50 ns), and Pb-free/halogen-free DPAK packaging compliant with industrial power-switching requirements.

Technical Context

This PNP transistor operates with a common-emitter configuration and supports high-speed switching via low saturation voltage and fast transition times. Its h_FE ranges from 140–400 (rank-dependent), with guaranteed minimum h_FE = 40 at I_C = −3 A, enabling stable current amplification under load.

The device uses a planar epitaxial structure with optimized base doping to achieve linearity in h_FE and low Cob = 40 pF (typ) at V_CB = −10 V, supporting efficient high-frequency operation in inverters and motor control stages without parasitic resonance concerns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - Withstands 100 V collector-to-emitter reverse bias before breakdown, suitable for 48 V and 72 V bus-level switching.
I_C	−4 A continuous - Supports sustained 4 A load current in relay coil or solenoid drive circuits without thermal derating at T_C = 25°C.
V_CE(sat)	−400 mV max at I_C = −2 A / I_B = −0.2 A - Minimizes conduction loss and self-heating during active switching in power stages.
f_T	180 MHz - Enables reliable operation up to ~10–20 MHz switching frequencies in resonant converters and Class-D amplifier output stages.
t_f	50 ns - Ensures rapid turn-off for reduced switching losses and EMI in high-frequency PWM applications.
Cob	40 pF typ at V_CB = −10 V - Limits Miller capacitance impact on gate/base drive dynamics in high-speed switching topologies.
P_C @ T_C	20 W - Delivers high power dissipation capability when mounted on heatsinked PCB copper, extending safe operating area in industrial controls.

Pinout & Package

DPAK (TP-FA) package - surface-mount, 4-pin, single-ended heat sink tab (pin 2 and 4 are internally connected collectors), JEDEC MO-215A compliant, footprint per Case 369AH.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires −0.2 A base drive for full saturation at −2 A collector current.
2	Collector	Main current-carrying terminal; electrically tied to pin 4; connects to high-side load return path.
3	Emitter	Common reference node; connects to system ground or negative rail in high-side switch configurations.
4	Collector	Second collector pad; enhances thermal conduction and current handling by paralleling internal die connections.

Key Features

Feature	Design Value
Low V_CE(sat)	−400 mV max enables <1.6 W conduction loss at −4 A, reducing heatsink requirements in compact power modules.
High f_T	180 MHz bandwidth supports clean square-wave switching up to 20 MHz, critical for resonant LLC and ZVS topologies.
Fast fall time	50 ns t_f minimizes overlap loss in complementary BJT half-bridges, improving efficiency in motor driver H-bridges.
Linear h_FE	h_FE maintains monotonicity across I_C = −0.5 A to −3 A, simplifying analog current regulation and feedback loop design.
Pb-free / Halogen-free	Meets IPC-1752A Class 2 material declarations and RoHS 2015/863/EU Annex II, supporting green manufacturing compliance.

Applications

Relay Drivers	DC-DC Converters
Use Scenario: Driving 24 V/48 V electromagnetic relays with coil currents up to 3.5 A in PLC I/O modules. IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil energization/de-energization with fast turn-off to suppress back-EMF spikes. Use Value: Low V_CE(sat) reduces relay coil power loss; 50 ns fall time limits flyback voltage overshoot and snubber component stress.	Use Scenario: Output stage switch in non-isolated buck or SEPIC converters delivering 3–5 A at 12–24 V output. IC Role / Device Role / Timing Role: Main power switch in hard-switched or quasi-resonant topologies operating at 100–500 kHz. Use Value: 180 MHz f_T ensures stable gain margin; 20 W P_C allows direct mounting on 2 oz copper without external heatsink.
Motor Control H-Bridges	Industrial Inverters
Use Scenario: Upper-leg PNP switch in discrete BJT-based H-bridge for 24 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: High-side current source enabling bidirectional motor control with complementary NPN low-side switches. Use Value: Matched t_on/t_f with 2SD1816 ensures minimal shoot-through risk; dual-collector pins improve thermal reliability under pulse loads.	Use Scenario: Switching element in three-phase inverter leg for 400 W HVAC fan drives and small pump controllers. IC Role / Device Role / Timing Role: Medium-power inverter switch operating at 8–16 kHz PWM frequency with forced-air cooling. Use Value: −100 V V_CEO provides 2× safety margin over 48 V bus; linear h_FE supports precise current limiting in overcurrent protection circuits.

Relay Drivers

DC-DC Converters

Use Scenario: Driving 24 V/48 V electromagnetic relays with coil currents up to 3.5 A in PLC I/O modules.

IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil energization/de-energization with fast turn-off to suppress back-EMF spikes.

Use Value: Low V_CE(sat) reduces relay coil power loss; 50 ns fall time limits flyback voltage overshoot and snubber component stress.

Use Scenario: Output stage switch in non-isolated buck or SEPIC converters delivering 3–5 A at 12–24 V output.

IC Role / Device Role / Timing Role: Main power switch in hard-switched or quasi-resonant topologies operating at 100–500 kHz.

Use Value: 180 MHz f_T ensures stable gain margin; 20 W P_C allows direct mounting on 2 oz copper without external heatsink.

Motor Control H-Bridges

Industrial Inverters

Use Scenario: Upper-leg PNP switch in discrete BJT-based H-bridge for 24 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: High-side current source enabling bidirectional motor control with complementary NPN low-side switches.

Use Value: Matched t_on/t_f with 2SD1816 ensures minimal shoot-through risk; dual-collector pins improve thermal reliability under pulse loads.

Use Scenario: Switching element in three-phase inverter leg for 400 W HVAC fan drives and small pump controllers.

IC Role / Device Role / Timing Role: Medium-power inverter switch operating at 8–16 kHz PWM frequency with forced-air cooling.

Use Value: −100 V V_CEO provides 2× safety margin over 48 V bus; linear h_FE supports precise current limiting in overcurrent protection circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	V_CEO = −100 V, I_C = −2 A, V_CE(sat) = −1.5 V (max) at I_C = −1 A - lower current rating and higher saturation voltage.	Not suitable for >2 A continuous loads; limited to lower-power relay and signal switching.	Select only if board space or cost constraints preclude DPAK mounting and load current remains ≤1.5 A.
2SB1260ZT1G	V_CEO = −120 V, I_C = −3 A, f_T = 100 MHz - higher voltage rating but lower bandwidth and current capability.	Better for 100 V bus systems but less optimal in high-frequency converter designs requiring >150 MHz f_T.	Prefer when system overvoltage tolerance exceeds −100 V and switching frequency is below 100 kHz.

Compared with MJD127G and 2SB1260ZT1G, the 2SB1216T-TL-H delivers superior combination of current capacity (−4 A), speed (180 MHz f_T, 50 ns t_f), and low-loss switching (−400 mV V_CE(sat)), making it the preferred choice for compact, high-efficiency 48 V industrial power stages.

Availability

2SB1216T-TL-H is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control H-bridges requiring stable component supply, long-term industrial lifecycle support, and halogen-free compliance.

Supply support for 2SB1216T-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SB1216 series belongs to onsemi's general-purpose power bipolar transistor product line, engineered specifically for high-reliability, medium-power switching in industrial controls and power conversion where robustness, thermal stability, and parametric consistency are critical.

FAQ

What is the maximum continuous collector current rating for the 2SB1216T-TL-H?

The 2SB1216T-TL-H is rated for −4 A continuous collector current (I_C) at case temperature T_C = 25°C. Derating applies above this temperature; the datasheet specifies 20 W total power dissipation at T_C = 25°C, which corresponds to the −4 A rating under typical heatsinked conditions. At ambient temperature with no heatsink, the usable current drops significantly due to thermal resistance limitations.

Does the 2SB1216T-TL-H have pin-to-pin compatibility with the 2SB1216T-TL-E?

Yes, the 2SB1216T-TL-H is pin-to-pin compatible with the 2SB1216T-TL-E. Both use identical DPAK (TP-FA) packaging, same pinout (pins 1–4 assigned as Base, Collector, Emitter, Collector), and share identical electrical specifications. The sole difference is material composition: 2SB1216T-TL-H is Pb-free and halogen-free, while 2SB1216T-TL-E is Pb-free only.

What is the typical gain-bandwidth product (f_T) of the 2SB1216T-TL-H and how is it measured?

The 2SB1216T-TL-H has a typical f_T of 180 MHz, measured under conditions of V_CE = −10 V and I_C = −0.5 A at T_A = 25°C. This value reflects the frequency at which the small-signal current gain |h_fe| drops to unity, confirming suitability for high-speed switching up to ~20 MHz in practical power converter designs.

Can the 2SB1216T-TL-H be used in complementary pair configurations with the 2SD1816T-TL-H?

Yes, the 2SB1216T-TL-H is designed as the PNP complement to the NPN 2SD1816T-TL-H. Both share matched pinouts, thermal profiles, and switching characteristics (e.g., similar t_on, t_f, V_CE(sat)), enabling balanced performance in push-pull and H-bridge topologies without cross-conduction risk or thermal mismatch.

What is the meaning of the "T-TL-H" suffix in 2SB1216T-TL-H?

The "T-TL-H" suffix denotes tape-and-reel packaging (T), DPAK (TP-FA) outline (TL), and halogen-free/Pb-free construction (H). Specifically: "T" indicates tape-and-reel format (700 units per reel); "TL" identifies the TP-FA (DPAK) package variant; "H" certifies compliance with JESD204B halogen-free standards and EU RoHS Directive 2015/863/EU Annex II.

2SB1216T-TL-H Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TP-FA

2SB1216T-TL-H FAQ

1.How can I place an order for 2SB1216T-TL-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1216T-TL-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1216T-TL-H reliable?

The price and inventory of 2SB1216T-TL-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1216T-TL-H is usually 5 days.

3.What payment methods are accepted for 2SB1216T-TL-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1216T-TL-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1216T-TL-H?

2SB1216T-TL-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1216T-TL-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1216T-TL-H?

For technical support, including 2SB1216T-TL-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1216T-TL-H requirements.

6.How does Aetrix verify that 2SB1216T-TL-H is sourced from the original manufacturer or authorized distributors?

All 2SB1216T-TL-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1216T-TL-H meets industry standards.

7.What is the process for return or replacement of 2SB1216T-TL-H?

All 2SB1216T-TL-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1216T-TL-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1216T-TL-H part is unused and in its original packaging.

Return procedure for 2SB1216T-TL-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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