onsemi 2SB1226
- Part No.:
- 2SB1226
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
2SB1226.pdf
- Description:
- TRANS PNP DARL 100V 3A TO-220ML
- Quantity:
- Payment:

- Shipping:

Inventory:3,500
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SB1226 from SANYO is a PNP epitaxial planar silicon Darlington transistor in TO-220ML package, rated for VCEO = –100 V, IC = –3 A, PC = 2 W (Tc = 25 °C), with DC current gain hFE ≥ 1000 at IC = –1.5 A, used in relay drivers and motor control circuits.
For engineers reviewing the 2SB1226 datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed high hFE, low VCE(sat) ≤ –1.5 V at IC = –1.5 A, wide SOA up to –100 V/–3 A, micaless mounting compatibility, and thermal performance validated to Tj = 150 °C.
Technical Context
The 2SB1226 operates as a high-gain PNP Darlington pair with integrated base-emitter shunt resistor network enabling direct TTL/CMOS drive. Its switching behavior is characterized by ton = 0.8 µs, toff = 5.0 µs, and tf = 1.2 µs under specified test conditions (VCC = –50 V, IC = –1 A, RB = 6 kΩ).
It features a thermally robust TO-220ML package with exposed collector tab, rated for continuous operation up to Tc = 150 °C and storage from –55 °C to +150 °C, and exhibits VBE(sat) ≤ –2.0 V at IC = –1.5 A with IC/IB = 500.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | –100 V - Maximum safe collector-emitter voltage before breakdown in open-base condition. |
| IC (DC) | –3 A - Continuous collector current rating defining steady-state load-handling capability. |
| PC (Tc = 25 °C) | 2 W - Maximum power dissipation at case temperature 25 °C; derates linearly above 25 °C. |
| hFE | 1000–4000 - DC current gain range at IC = –1.5 A, VCE = –3 V, enabling low-base-drive designs. |
| VCE(sat) | ≤ –1.5 V - Saturation voltage at IC = –1.5 A, IB = –3 mA, directly impacting conduction loss and heat generation. |
| fT | 2 MHz - Transition frequency at VCE = –5 V, IC = –1.5 A, indicating usable bandwidth for medium-speed switching. |
| Tj max | +150 °C - Maximum junction temperature limit; defines thermal design margin for heatsink sizing. |
Pinout & Package
2SB1226 uses the TO-220ML package with micaless mounting surface and electrically isolated collector tab. Pin numbering follows standard TO-220 orientation: viewed from front (label side), pins are numbered left-to-right as Base (1), Collector (2), Emitter (3). The collector is internally connected to the metal tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base current to enable Darlington conduction; requires external current-limiting resistor when driven from logic. |
| 2 (Collector) | Main current output terminal | Internally bonded to metal tab; must be electrically isolated from heatsink unless circuit ground reference permits direct mounting. |
| 3 (Emitter) | Current return path | Connected to load return or system ground; carries full load current and defines emitter-referenced bias point. |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain | hFE ≥ 1000 at IC = –1.5 A enables microcontroller-level base drive without additional amplification stages. |
| Wide Safe Operating Area (SOA) | Rated for –100 V / –3 A single-pulse operation supports robust handling of inductive kickback in relay/motor loads. |
| Micaless TO-220ML package | Eliminates insulating washer requirement, reducing thermal resistance and assembly cost in high-volume mounting. |
| Low saturation voltage | VCE(sat) ≤ –1.5 V at IC = –1.5 A minimizes conduction losses and improves efficiency in high-current switching applications. |
| Fast switching speed | ton/toff/tf = 0.8/5.0/1.2 µs allows reliable operation up to ~100 kHz PWM frequencies in driver circuits. |
Applications
| Relay Driver Circuit | Printer Hammer Driver |
|---|---|
Use Scenario: Driving 24 V/500 mA electromagnetic relays in industrial PLC output modules. IC Role / Device Role / Timing Role: High-gain PNP Darlington switch providing galvanically isolated load control with minimal base drive current. Use Value: Enables direct interface with 3.3 V/5 V logic outputs while sustaining 100% duty-cycle operation and surviving 200 V inductive flyback transients. | Use Scenario: Actuating solenoid-based print hammers in dot-matrix printers requiring precise 10 ms pulse timing. IC Role / Device Role / Timing Role: Fast-switching PNP output stage delivering peak current >2 A for mechanical impact generation. Use Value: Low tf (1.2 µs) and wide SOA ensure clean turn-off and prevent hammer bounce; VCE(sat) ≤ –1.5 V limits self-heating during repetitive pulsing. |
| Voltage Regulator Control | Motor Driver Stage |
Use Scenario: Series pass transistor in linear voltage regulators supplying ±15 V analog circuitry. IC Role / Device Role / Timing Role: High-current, high-voltage PNP pass element regulating output via feedback-controlled base bias. Use Value: VCEO = –100 V provides ample headroom for 72 V input rails; hFE ≥ 1000 reduces error amplifier loading and improves regulation accuracy. | Use Scenario: H-bridge high-side switch in 24 V brushed DC motor controllers for HVAC actuators. IC Role / Device Role / Timing Role: PNP Darlington configured as saturated switch controlling motor direction and speed via PWM. Use Value: Micaless TO-220ML simplifies heatsinking in space-constrained enclosures; Tj = 150 °C rating supports continuous 2 A operation in ambient up to 70 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SB1184 | VCEO = –80 V, IC = –2 A, hFE ≥ 1000 at IC = –1 A, TO-220 package | Limited voltage/current headroom; unsuitable for 100 V bus or >2 A loads | Select only if operating voltage ≤ 60 V and peak current < 2 A; verify SOA curves for inductive loads. |
| BD679 | VCEO = –80 V, IC = –4 A, hFE ≥ 750 at IC = –2 A, TO-126 package | Higher current but lower gain and smaller package; no micaless option | Prefer for compact layouts where thermal mass is managed externally; not drop-in due to different footprint and pinout. |
Compared with 2SB1226, 2SB1184 offers reduced voltage margin and lower current capacity, while BD679 trades gain and thermal mounting simplicity for higher current in a smaller outline-neither is pin-compatible, and both require PCB layout revision and SOA revalidation.
Availability
2SB1226 is available at Aetrix Electronics and suitable for relay drivers, printer hammer drivers, and voltage regulator control applications requiring stable component supply, long-term obsolescence management, and traceable sourcing for industrial automation systems.
Supply support for 2SB1226 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2011.
The 2SB1226 belongs to SANYO's ENN2212B series of high-gain PNP Darlington transistors designed specifically for industrial driver applications demanding reliability, wide SOA, and simplified thermal mounting.
FAQ
What is the maximum continuous collector current rating for the 2SB1226?
The 2SB1226 has a maximum continuous collector current rating of –3 A at case temperature Tc = 25 °C. This rating decreases with rising case temperature per the derating curve in the datasheet; at Tc = 100 °C, the usable IC drops to approximately –1.5 A. Exceeding this limit risks thermal runaway and permanent device failure.
Does the 2SB1226 require an insulating washer when mounted to a heatsink?
No, the 2SB1226 uses a micaless TO-220ML package where the collector is electrically isolated from the mounting surface by internal construction. This eliminates the need for a mica or silicone washer, reducing thermal resistance and assembly complexity. However, verify that the heatsink is either floating or referenced to collector potential before mounting.
What is the typical DC current gain (hFE) of the 2SB1226 at IC = –1.5 A?
The 2SB1226 guarantees hFE ≥ 1000 at IC = –1.5 A, VCE = –3 V, and Ta = 25 °C. Typical values reach 2000–4000 under these conditions, enabling very low base drive requirements-e.g., only –3 mA base current needed to sustain –1.5 A collector current.
Can the 2SB1226 be used in avalanche mode for inductive load protection?
No, the 2SB1226 is not rated or characterized for controlled avalanche operation. Its absolute maximum VCEO rating of –100 V applies only under specified test conditions with base open. For inductive load switching, external clamping (e.g., flyback diode) is mandatory to prevent voltage overshoot beyond rated limits and avoid destructive breakdown.
What is the thermal resistance from junction to case (RθJC) for the 2SB1226?
The 2SB1226 has a typical junction-to-case thermal resistance (RθJC) of 1.25 °C/W, measured from the silicon die to the metal tab surface. This value assumes proper mounting pressure and thermal interface material; actual system-level RθJA depends on heatsink design and ambient conditions.
2SB1226 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP - Darlington
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 3mA, 1.5A
- Current - Collector Cutoff (Max):
- 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1500 @ 1.5A, 3V
- Power - Max:
- 2 W
- Frequency - Transition:
- 20MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220ML
2SB1226 FAQ
1.How can I place an order for 2SB1226 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SB1226 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SB1226 reliable?
The price and inventory of 2SB1226 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1226 is usually 5 days.
3.What payment methods are accepted for 2SB1226?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1226 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SB1226?
2SB1226 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SB1226 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SB1226?
For technical support, including 2SB1226 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1226 requirements.
6.How does Aetrix verify that 2SB1226 is sourced from the original manufacturer or authorized distributors?
All 2SB1226 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1226 meets industry standards.
7.What is the process for return or replacement of 2SB1226?
All 2SB1226 units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1226, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SB1226 part is unused and in its original packaging.
Return procedure for 2SB1226:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SB1226 Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

