onsemi 2SB1295-5-TB-E

Overview

2SB1295-5-TB-E from SANYO is a PNP epitaxial planar silicon transistor designed for low-frequency general-purpose amplifier and medium-speed switching applications. It delivers −800 mA collector current, −15 V V_CEO, −15 V V_CBO, 150 °C junction temperature rating, and ultrasmall CP package (2.9 × 1.9 × 0.95 mm), enabling compact motor drivers and AF power amplifiers.

For engineers reviewing the 2SB1295-5-TB-E datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE rank 5 (130–270 at I_C = −50 mA), V_CE(sat) ≤ −100 mV at I_C = −400 mA/I_B = −20 mA, and thermal derating per PC–Ta curve in CP package.

Technical Context

This PNP bipolar junction transistor operates in linear amplification and active switching modes with DC current gain h_FE specified across I_C = −1 to −500 mA at V_CE = −2 V. Its f_T of 200 MHz supports medium-speed switching up to ~100 kHz with minimal phase shift in audio stages.

The device features low saturation voltages-V_CE(sat) ≤ −100 mV and V_BE(sat) ≤ −1.0 V at high drive conditions-and exhibits Cob = 100 pF at V_CB = −10 V, ensuring stable gain in feedback amplifier configurations without unintended oscillation.

Key Specifications

Pinout & Package

2SB1295-5-TB-E uses the CP (Chip Package) ultrasmall surface-mount package measuring 2.9 × 1.9 × 0.95 mm, optimized for space-constrained consumer electronics and portable motor control modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with 2SB1295-5-TB-E, the 2SB1218-5-TB-E trades 300 mA current headroom for tighter thermal profile, while BC807-40-7-F offers voltage robustness at the cost of board area and pin compatibility-neither is pin-compatible, but both serve overlapping functional roles in discrete PNP switching.

Availability

2SB1295-5-TB-E is available at Aetrix Electronics and suitable for AF power amplifier, small-sized motor driver, and medium-speed switching applications requiring stable component supply, long-term obsolescence planning, and traceable sourcing for consumer electronics OEMs.

Supply support for 2SB1295-5-TB-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer known for high-reliability discrete devices and analog ICs before its acquisition by Panasonic in 2011.

The 2SB1295-5-TB-E belongs to SANYO's low-frequency general-purpose PNP transistor product line, engineered specifically for compact audio amplification, battery-powered motor control, and cost-sensitive switching in consumer electronics.

FAQ

What is the guaranteed h_FE range for 2SB1295-5-TB-E?

The 2SB1295-5-TB-E is binned to h_FE rank 5, guaranteeing a DC current gain of 130–270 when measured at I_C = −50 mA and V_CE = −2 V. This tight specification ensures predictable biasing in production amplifier circuits without post-manufacturing calibration. The 2SB1295-5-TB-E datasheet confirms this range applies specifically to the "5" suffix variant.

Can 2SB1295-5-TB-E replace 2SB1295-6-TB-E in existing designs?

No-2SB1295-5-TB-E and 2SB1295-6-TB-E differ in h_FE rank: rank 5 (130–270) vs. rank 6 (200–400). Substituting them may cause overbiasing or thermal instability in fixed-resistor bias networks. The 2SB1295-5-TB-E must be used only where rank 5 gain is specified; verify circuit stability with worst-case h_FE min/max before substitution.

What is the maximum allowable collector current for 2SB1295-5-TB-E at 75 °C ambient?

At T_a = 75 °C, the 2SB1295-5-TB-E's maximum continuous collector current drops to approximately −400 mA, based on the linear derating curve in its PC–Ta graph (200 mW at 25 °C, zero at 150 °C). Exceeding this risks thermal runaway. The 2SB1295-5-TB-E datasheet provides exact derating values per ambient temperature step.

Does 2SB1295-5-TB-E support switching at 100 kHz?

Yes-the 2SB1295-5-TB-E has an f_T of 200 MHz and demonstrated switching waveforms up to 100 kHz in SANYO application notes. However, full-power switching at that frequency requires careful attention to base drive strength and layout parasitics. The 2SB1295-5-TB-E's V_CE(sat) and Cob specs confirm suitability for medium-speed digital switching within this range.

Is the CP package of 2SB1295-5-TB-E compatible with standard reflow profiles?

Yes-the CP package (2.9 × 1.9 × 0.95 mm) is qualified for standard lead-free reflow per J-STD-020, with peak temperature ≤260 °C for ≤10 seconds. Its thermal mass and pad layout match IPC-7351B recommendations. The 2SB1295-5-TB-E mounting instructions specify 0.3 mm solder paste stencil and 0.5 mm pitch alignment for reliable assembly yield.