onsemi 2SB1302S-TD-E

Overview

2SB1302S-TD-E from onsemi is a PNP bipolar junction transistor (BJT) designed for high-current switching in compact power circuits, featuring −20 V V_CEO, −5 A I_C, −250 mV typical V_CE(sat) at −3 A/−60 mA, 320 MHz f_T, and SOT-89 (PCP-1) package. It serves as a low-saturation, fast-switching output stage in DC-DC converters and relay drivers.

For engineers reviewing the 2SB1302S-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP switching performance under −3 A load, thermal derating on ceramic substrate, Pb-free RoHS-compliant packaging, and rank-specific h_FE (140–280), critical for motor driver bias stability and lamp driver current regulation.

Technical Context

This device employs FBET and MBIT fabrication processes to achieve low V_CE(sat) and fast switching (t_on = 40 ns, t_f = 10 ns) while maintaining robust breakdown ratings: −25 V V_CBO, −20 V V_CEO, and −5 V V_EBO. Its 320 MHz f_T supports medium-frequency switching up to several hundred kHz in hard-switched topologies.

The SOT-89 package enables high-density hybrid IC integration with 1.3 W power dissipation on a 250 mm² ceramic substrate. Rank 'S' guarantees h_FE of 140–280 at −500 mA and 60 minimum at −4 A, ensuring predictable gain across load range in linear and saturated operation.

Key Specifications

Pinout & Package

SOT-89 (PCP-1, Case 419AU) is a surface-mount, 3-terminal plastic package measuring 4.50 × 2.50 × 1.50 mm with 1.50 mm lead pitch. It features exposed collector tab for thermal conduction to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Compared with 2SB1302S-TD-E, 2SB1218S-TL-E trades current capacity for marginally better gain consistency, while MJD2955G sacrifices speed and board space for raw power handling-neither is pin-compatible, and both require layout revision for replacement.

Availability

2SB1302S-TD-E is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and relay drivers requiring stable component supply, RoHS compliance, and SMT-compatible high-current PNP switching performance.

Supply support for 2SB1302S-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2SB1302S-TD-E belongs to onsemi's PCP (Power Compact Package) family of low-saturation PNP transistors engineered for high-density, thermally efficient switching in space-constrained power management subsystems.

FAQ

What is the guaranteed h_FE range for 2SB1302S-TD-E?

The 2SB1302S-TD-E is ranked 'S', guaranteeing DC current gain (h_FE) between 140 and 280 when measured at V_CE = −2 V and I_C = −500 mA. This range is confirmed per onsemi datasheet Rev. 3 and applies specifically to the 2SB1302S-TD-E variant-not the T-rank version. Designers must size base drive accordingly to ensure saturation across this gain spread.

Can 2SB1302S-TD-E replace 2SB1302T-TD-E in a design?

No-2SB1302S-TD-E and 2SB1302T-TD-E differ in h_FE specification: S-rank is 140–280, T-rank is 200–400. Substituting without circuit review risks insufficient base drive (if T-rank was used for marginal gain margin) or excessive base current (if S-rank replaces T-rank). The 2SB1302S-TD-E must be validated for gain-dependent timing and saturation behavior in the target application.

What is the maximum allowable continuous collector current for 2SB1302S-TD-E at 75°C ambient?

At T_a = 75°C, the 2SB1302S-TD-E's maximum continuous collector current drops to approximately −3.2 A, derived from Figure 10 (P_C vs. T_a) and thermal resistance modeling on a 250 mm² ceramic substrate. This derating ensures junction temperature remains below 150°C. Operation above this current requires forced cooling or reduced duty cycle to avoid thermal runaway.

Is 2SB1302S-TD-E suitable for linear regulator pass transistor applications?

The 2SB1302S-TD-E is optimized for switching, not linear operation: its SOA curve (Figure 9) shows limited second breakdown margin at high V_CE/I_C combinations, and V_CE(sat) is specified only for saturated switching. For linear regulators, devices with wider Safe Operating Area and guaranteed linear h_FE (e.g., MJD2955G) are preferred. Using 2SB1302S-TD-E in linear mode risks thermal instability.

Does 2SB1302S-TD-E have an exposed collector pad, and how should it be connected?

Yes-the center pin (Pin 2) of the 2SB1302S-TD-E's SOT-89 package is electrically and thermally connected to an exposed collector metal tab. It must be soldered directly to a large copper pour or thermal pad on the PCB to achieve the rated 1.3 W power dissipation. Floating or poorly connected collector tabs cause rapid junction overheating and premature failure.