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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1302T-TD-E

Name: 2SB1302T-TD-E
Brand: onsemi
SKU: 2SB1302T-TD-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1302T-TD-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SB1302T-TD-E.pdf

Description:: TRANS PNP 20V 5A PCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1302T-TD-E from onsemi is a PNP bipolar junction transistor rated for −20 V V_CEO, −5 A I_C, and 1.3 W power dissipation in SOT-89 package, featuring low −250 mV typical V_CE(sat) at −3 A/−60 mA drive and 320 MHz f_T; used in relay drivers and DC-DC converter switching stages.

For engineers reviewing the 2SB1302T-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified −20 V breakdown rating, confirmed SOT-89 thermal performance on ceramic substrate, documented h_FE rank T (200–400 at 500 mA), and validated fast switching (t_on = 40 ns, t_f = 10 ns).

Technical Context

This PNP transistor employs FBET and MBIT fabrication processes to achieve low saturation voltage and high current gain uniformity across its h_FE Rank T bin (200–400 at I_C = −500 mA). Its −25 V V_CBO and −5 V V_EBO support robust blocking in negative-rail control circuits.

Designed for high-density hybrid IC integration, it delivers 320 MHz f_T with 60 pF C_ob at −10 V V_CB, enabling reliable operation in medium-frequency switching applications up to several hundred kHz without parasitic oscillation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−20 V - Maximum safe collector-emitter reverse bias before breakdown in common-emitter configuration.
I_C	−5 A - Continuous DC collector current rating defining maximum steady-state load drive capability.
V_CE(sat)	−250 to −500 mV - Confirmed low-saturation voltage at −3 A/−60 mA, reducing conduction loss in switching nodes.
h_FE Rank	T (200–400) - Guaranteed DC current gain range at −500 mA, enabling predictable base drive sizing.
f_T	320 MHz - Gain-bandwidth product confirming usable frequency response for fast-switching control loops.
t_f	10 ns - Measured fall time under defined test conditions, supporting ≤10 MHz switching frequencies.
P_C	1.3 W - Thermal power limit when mounted on 250 mm² × 0.8 mm ceramic substrate, dictating heatsinking requirements.

Pinout & Package

SOT-89 (Case 419AU), surface-mount plastic package measuring 4.50 × 2.50 × 1.50 mm with 1.50 mm lead pitch; thermally optimized for ceramic substrate mounting.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal accepting negative base current to enable PNP conduction; requires current-limiting resistor in series.
2	Collector	Main current-carrying terminal connected to negative supply rail in high-side switch configurations.
3	Emitter	Output terminal tied to load or ground return path; serves as reference node for base-emitter biasing.

Key Features

Feature	Design Value
Low V_CE(sat)	−250 mV typical at −3 A ensures <0.75 W conduction loss, critical for thermal management in compact DC-DC modules.
Fast switching	40 ns t_on, 10 ns t_f enables efficient operation at 500 kHz–1 MHz PWM frequencies with minimal dead-time penalty.
High h_FE consistency	Rank T bin (200–400) reduces base drive variability across production lots, simplifying gate driver design.
RoHS-compliant packaging	Pb-free SOT-89 construction meets global environmental regulations without compromising thermal or mechanical reliability.

Applications

Relay Drivers	DC-DC Converter Switches
Use Scenario: Driving electromagnetic relays requiring −5 A peak coil current with fast turn-off to prevent contact arcing. IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil energization/de-energization in industrial PLC output stages. Use Value: Low −250 mV V_CE(sat) minimizes power dissipation during hold state, extending relay lifetime and reducing board heating.	Use Scenario: Serving as synchronous rectifier or main switch in non-isolated buck converters operating at 200–500 kHz. IC Role / Device Role / Timing Role: Power switching element handling −5 A load current with controlled rise/fall edges to reduce EMI. Use Value: 320 MHz f_T and 10 ns t_f support stable closed-loop regulation without phase margin erosion.
Lamp Drivers	Motor Driver Stages
Use Scenario: Controlling incandescent or halogen lamp loads up to 60 W in automotive interior lighting systems. IC Role / Device Role / Timing Role: High-side current sink switching lamp cathodes to chassis ground in 12 V negative-ground architectures. Use Value: −20 V V_CEO withstands load-dump transients up to −18 V, ensuring robustness against automotive electrical noise.	Use Scenario: Implementing H-bridge half-bridge legs for brushed DC motor control in power tools and HVAC actuators. IC Role / Device Role / Timing Role: Complementary PNP device paired with NPN counterparts to deliver bidirectional current flow with matched timing. Use Value: Matched t_on/t_f characteristics between complementary pairs minimize shoot-through risk during commutation.

Relay Drivers

DC-DC Converter Switches

Use Scenario: Driving electromagnetic relays requiring −5 A peak coil current with fast turn-off to prevent contact arcing.

IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil energization/de-energization in industrial PLC output stages.

Use Value: Low −250 mV V_CE(sat) minimizes power dissipation during hold state, extending relay lifetime and reducing board heating.

Use Scenario: Serving as synchronous rectifier or main switch in non-isolated buck converters operating at 200–500 kHz.

IC Role / Device Role / Timing Role: Power switching element handling −5 A load current with controlled rise/fall edges to reduce EMI.

Use Value: 320 MHz f_T and 10 ns t_f support stable closed-loop regulation without phase margin erosion.

Lamp Drivers

Motor Driver Stages

Use Scenario: Controlling incandescent or halogen lamp loads up to 60 W in automotive interior lighting systems.

IC Role / Device Role / Timing Role: High-side current sink switching lamp cathodes to chassis ground in 12 V negative-ground architectures.

Use Value: −20 V V_CEO withstands load-dump transients up to −18 V, ensuring robustness against automotive electrical noise.

Use Scenario: Implementing H-bridge half-bridge legs for brushed DC motor control in power tools and HVAC actuators.

IC Role / Device Role / Timing Role: Complementary PNP device paired with NPN counterparts to deliver bidirectional current flow with matched timing.

Use Value: Matched t_on/t_f characteristics between complementary pairs minimize shoot-through risk during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SB1218T-TD-E	Lower I_C (−3 A), higher V_CE(sat) (−400 mV typ), same SOT-89 package	Reduced current capacity limits use in >3 A relay or motor loads	Select when lower cost and reduced thermal demand justify 40% lower current rating.
MMBT4403LT1G	Smaller SOT-23 package, lower I_C (−600 mA), higher V_CE(sat) (−750 mV typ)	Not suitable for >1 A loads; limited to signal-level or low-power switching	Choose only for space-constrained PCBs where current demand is below 0.6 A.

Compared with 2SB1302T-TD-E, 2SB1218T-TD-E offers cost savings at the expense of 40% lower current drive and higher conduction loss, while MMBT4403LT1G sacrifices both current and thermal capability for ultra-compact footprint-neither is pin-compatible, requiring layout revision.

Availability

2SB1302T-TD-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converter switches, and lamp drivers requiring stable component supply with guaranteed RoHS compliance and traceable lot history.

Supply support for 2SB1302T-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2SB1302T-TD-E belongs to onsemi's PCP (Power Compact Package) family of PNP transistors engineered for high-current density switching in space-constrained power conversion and electromechanical control applications.

FAQ

What is the maximum continuous collector current rating for the 2SB1302T-TD-E?

The 2SB1302T-TD-E is rated for −5 A continuous collector current (I_C) at T_a = 25°C when mounted on a 250 mm² × 0.8 mm ceramic substrate. This rating assumes proper thermal management; derating is required above 25°C ambient per the PC–T_a curve in the datasheet. The 2SB1302T-TD-E must not exceed this limit to ensure long-term reliability and avoid junction overheating.

Does the 2SB1302T-TD-E have a specified gain-bandwidth product?

Yes, the 2SB1302T-TD-E has a guaranteed minimum f_T of 320 MHz at V_CE = −5 V and I_C = −200 mA. This parameter confirms its suitability for medium-frequency switching applications such as DC-DC converters operating up to several hundred kHz. The 2SB1302T-TD-E maintains usable gain well into the MHz range, supporting stable feedback loop design without excessive phase lag.

What is the pin configuration of the 2SB1302T-TD-E in its SOT-89 package?

The 2SB1302T-TD-E uses standard SOT-89 pinout: Pin 1 is Base, Pin 2 is Collector, and Pin 3 is Emitter. This configuration is verified in the official onsemi marking diagram and mechanical outline (Case 419AU). The 2SB1302T-TD-E requires correct orientation during placement to avoid functional failure-Collector (Pin 2) connects to the negative rail, Emitter (Pin 3) to load return.

Is the 2SB1302T-TD-E RoHS compliant and lead-free?

Yes, the 2SB1302T-TD-E is explicitly marked Pb-Free and RoHS compliant per the onsemi datasheet revision dated August 2024. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). The 2SB1302T-TD-E meets EU Directive 2011/65/EU and subsequent amendments, making it suitable for environmentally regulated end equipment.

How does the h_FE Rank T specification affect circuit design for the 2SB1302T-TD-E?

The 2SB1302T-TD-E is binned to Rank T, guaranteeing h_FE between 200 and 400 at V_CE = −2 V and I_C = −500 mA. This tight gain spread allows precise base resistor calculation-e.g., for −3 A load, IB can be sized between −7.5 mA and −15 mA. The 2SB1302T-TD-E's consistent h_FE reduces need for overdesign and improves batch-to-batch performance predictability in production.

2SB1302T-TD-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 60mA, 3A

Current - Collector Cutoff (Max):: 500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 500mA, 2V

Power - Max:: 1.3 W

Frequency - Transition:: 320MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SB1302T-TD-E FAQ

1.How can I place an order for 2SB1302T-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1302T-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1302T-TD-E reliable?

The price and inventory of 2SB1302T-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1302T-TD-E is usually 5 days.

3.What payment methods are accepted for 2SB1302T-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1302T-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1302T-TD-E?

2SB1302T-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1302T-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1302T-TD-E?

For technical support, including 2SB1302T-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1302T-TD-E requirements.

6.How does Aetrix verify that 2SB1302T-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SB1302T-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1302T-TD-E meets industry standards.

7.What is the process for return or replacement of 2SB1302T-TD-E?

All 2SB1302T-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1302T-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1302T-TD-E part is unused and in its original packaging.

Return procedure for 2SB1302T-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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