Renesas 2SB772-AZ

Overview

2SB772-AZ from Renesas Electronics is a PNP silicon power transistor designed for output-stage switching and amplification in 3 W audio amplifiers, DC-DC converters, voltage regulators, and relay drivers. It delivers V_CE(sat) ≤ −0.5 V at I_C = −2.0 A / I_B = −0.2 A, h_FE2 = 60–400 at V_CE = −2.0 V / I_C = −1.0 A, and f_T = 80 MHz, housed in a TO-126 (MP-5) package with integral heat sink mounting plane.

For engineers reviewing the 2SB772-AZ datasheet, 2SB772-AZ pinout, 2SB772-AZ application, or 2SB772-AZ equivalent, key selection considerations include its PNP polarity, −30 V V_CEO, −3.0 A I_C(DC), low saturation voltage, and TO-126 thermal performance-critical for compact linear and switching power stages in industrial and consumer electronics.

Technical Context

The 2SB772-AZ operates as a medium-power PNP bipolar junction transistor optimized for linear and saturated switching modes. Its design emphasizes low V_CE(sat) and high h_FE linearity across collector currents from 20 mA to 1.0 A, enabling stable gain control in audio output stages and precise current regulation in DC-DC feedback paths.

Thermal management is integrated via direct-collector-to-mounting-plane connection in the TO-126 package, supporting 10 W total power dissipation at T_C = 25°C. Electrical behavior is characterized at T_A = 25°C with pulse testing (PW ≤ 350 μs, duty ≤ 2%) for transient ratings like I_C(pulse) = −7.0 A.

Key Specifications

Pinout & Package

2SB772-AZ uses the TO-126 (MP-5) plastic package with collector internally connected to the mounting plane for direct heatsinking. No insulator bushing required. Package dimensions: 13.0 mm min length, 8.5 mm max height, 3.8 mm ±0.2 mm width, 2.5 mm ±0.2 mm lead spacing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with 2SA1015-Y and MJD2955G, the 2SB772-AZ uniquely balances −30 V rating, −3.0 A DC current, −0.5 V saturation, and TO-126 thermal efficiency-making it optimal for compact 3 W audio, relay, and regulator applications where board space and passive cooling are prioritized.

Availability

2SB772-AZ is available at Aetrix Electronics and suitable for audio amplifier output stages, DC-DC converter switches, and relay driver interfaces requiring stable component supply and long-term industrial availability.

Supply support for 2SB772-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and discrete devices.

The 2SB772-AZ belongs to Renesas' legacy silicon power transistor family, engineered for cost-sensitive, thermally constrained linear and switching power applications in consumer and industrial equipment.

FAQ

What is the maximum continuous collector current for the 2SB772-AZ?

The 2SB772-AZ has a maximum DC collector current (I_C(DC)) rating of −3.0 A at T_A = 25°C. This rating assumes adequate PCB copper area or heatsinking; derating is required above 25°C ambient per the device's thermal resistance curve. The 2SB772-AZ maintains reliable operation up to its 150°C maximum junction temperature when properly mounted.

Does the 2SB772-AZ require an insulating washer when mounted to a heatsink?

No, the 2SB772-AZ does not require an insulating washer because its collector terminal is internally connected to the metal mounting plane and is electrically isolated from emitter and base. However, if the heatsink is grounded and the collector node must remain floating (e.g., in high-side configurations), electrical isolation remains necessary-verify circuit topology before mounting. The 2SB772-AZ datasheet explicitly states "no insulator bushing required" for standard use cases.

What is the guaranteed h_FE range for the 2SB772-AZ at 1.0 A collector current?

The 2SB772-AZ guarantees h_FE2 = 60 to 400 when measured at V_CE = −2.0 V and I_C = −1.0 A. This range is binned into four ranks (R/Q/P/E), with the "AZ" suffix indicating a specific h_FE2 grade per Renesas' classification table. Designers should select base resistors based on the minimum h_FE (60) to ensure saturation across all units. The 2SB772-AZ's h_FE linearity supports predictable biasing in linear applications.

Can the 2SB772-AZ be used in place of an NPN transistor in a circuit?

No-the 2SB772-AZ is a PNP transistor and cannot directly replace an NPN device without inverting the circuit topology, supply polarity, and bias network. Swapping polarity risks reverse-biasing diodes, damaging ICs, or causing latch-up. If an NPN alternative is needed, consider complementary devices like the 2SD882 series-but verify voltage, current, and gain compatibility. The 2SB772-AZ functions only as a PNP current sink with negative control requirements.

What is the thermal resistance from junction to case (R_th(j-c)) for the 2SB772-AZ?

The 2SB772-AZ has a calculated R_th(j-c) of 12.5°C/W, derived from its 10 W total power dissipation rating at T_C = 25°C (P_D = (T_j(max) − T_C) / R_th(j-c)). This value reflects direct thermal conduction from die to mounting plane and confirms suitability for passive heatsinking in compact enclosures. Actual R_th(j-a) depends heavily on PCB layout and airflow; the 2SB772-AZ's TO-126 design prioritizes case-to-heatsink efficiency over ambient convection.