onsemi 2SB815-6-TB-E

Overview

2SB815-6-TB-E from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-voltage, medium-current applications. It features a DC current gain (h_FE) of 200–400 at I_C = 2 mA, V_CE = 1 V; maximum collector-emitter voltage (V_CEO) of 30 V; continuous collector current (I_C) rating of 500 mA; and operates up to 200 MHz transition frequency (f_T). It is commonly used in audio preamplifier stages and relay driver circuits.

For engineers reviewing the 2SB815-6-TB-E datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-92 package footprint, guaranteed h_FE range, V_CEO derating behavior, and thermal resistance (R_θJA = 200°C/W) under standard PCB mounting conditions.

Technical Context

This device belongs to onsemi's legacy small-signal BJT family optimized for cost-sensitive linear and digital control functions. Its base-emitter saturation voltage (V_BE(sat)) is specified at 1.2 V typical with I_C/I_B = 50/5 mA, supporting reliable turn-on in TTL-compatible logic interfaces. The device exhibits a maximum collector-base breakdown voltage (V_(BR)CBO) of 40 V and a maximum emitter-base voltage (V_(BR)EBO) of 5 V.

Thermal performance is defined for operation within −55°C to +150°C junction temperature range. The 2SB815-6-TB-E is not rated for automotive AEC-Q101 qualification and lacks built-in ESD protection-external clamping is recommended in noisy environments.

Key Specifications

Pinout & Package

2SB815-6-TB-E is housed in a TO-92 plastic package with 3 leads. Lead identification follows JEDEC TO-92 outline: Emitter (lead 1), Base (lead 2), Collector (lead 3), viewed from flat side with leads down.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP BJT switching and amplification applications.

Compared with 2SA1015-Y(TB) and MPSA92, the 2SB815-6-TB-E offers superior h_FE consistency and lower V_BE(sat), making it more suitable for low-power, gain-critical linear and switching roles in 5–12 V systems-without sacrificing TO-92 board space or assembly compatibility.

Availability

2SB815-6-TB-E is available at Aetrix Electronics and suitable for audio signal conditioning, relay driving, LED current regulation, and level translation applications requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SB815-6-TB-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor leader delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SB815-6-TB-E belongs to onsemi's legacy small-signal transistor product line, engineered for reliability and manufacturability in cost-sensitive consumer and industrial control circuits.

FAQ

What is the maximum operating junction temperature for the 2SB815-6-TB-E?

The 2SB815-6-TB-E has a specified maximum junction temperature (T_J) of +150°C. This limit applies under steady-state conditions with appropriate PCB copper area and ambient airflow. Derating is required above +25°C ambient per the R_θJA = 200°C/W specification. Exceeding this temperature risks permanent parametric shift or failure. Always verify thermal design using actual board layout and power dissipation in the final 2SB815-6-TB-E application.

Is the 2SB815-6-TB-E RoHS compliant and lead-free?

Yes, the 2SB815-6-TB-E is RoHS compliant and lead-free per EU Directive 2011/65/EU and onsemi's Pb-free packaging standards. The "TB-E" suffix explicitly denotes tape-and-reel packaging with lead-free (Pb-free) finish. Full material composition data and test reports are available in onsemi's official compliance documentation for the 2SB815-6-TB-E.

Does the 2SB815-6-TB-E have built-in ESD protection?

No, the 2SB815-6-TB-E does not incorporate integrated ESD protection diodes. Its absolute maximum ratings specify only ±500 V HBM (Human Body Model) per JESD22-A114, which reflects inherent silicon robustness-not engineered protection. For use in handling-prone or electrically noisy environments, external TVS or RC filtering on base and emitter lines is strongly recommended to prevent latent damage to the 2SB815-6-TB-E.

Can the 2SB815-6-TB-E replace the 2N3906 in existing designs?

The 2SB815-6-TB-E is not a direct replacement for the 2N3906 due to differences in h_FE range (200–400 vs. 100–300), V_CEO (30 V vs. 40 V), and V_BE(sat) (1.2 V vs. 0.65 V). While both are TO-92 PNP BJTs, the 2SB815-6-TB-E's higher gain and higher saturation voltage may alter bias points and switching thresholds. Validation of circuit behavior-including quiescent current and switching speed-is required before substituting the 2SB815-6-TB-E for the 2N3906.

What is the typical storage life and moisture sensitivity level (MSL) of the 2SB815-6-TB-E?

The 2SB815-6-TB-E is classified as MSL Level 1 per J-STD-020, meaning it has unlimited floor life and no bake requirement before soldering. Its plastic TO-92 package provides inherent moisture resistance. Long-term storage (>12 months) should occur in dry, ambient conditions (<40°C, <60% RH); desiccant packaging is not required. Full MSL and handling guidance is documented in the official 2SB815-6-TB-E packaging specification sheet.