Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2SB817C

Part No.:
2SB817C
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-3P-3, SC-65-3
Datasheet:
Aetrix2SB817C.pdf
Description:
TRANS PNP 140V 12A TO-3P-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:17,513

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SB817C from SANYO is a PNP epitaxial planar silicon transistor rated for 140 V VCEO, 12 A continuous collector current, and 120 W collector dissipation at Tc = 25°C. It features high ASO robustness, MBIT process technology, and is designed for high-power audio frequency output stages in linear amplifiers.

For engineers reviewing the 2SB817C datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-3PB package thermal performance, VCE(sat) ≤ –2.0 V at IC = –5 A / IB = –0.5 A, fT ≥ 10 MHz, and safe operating area suitability for Class AB push-pull output stages.

Technical Context

The 2SB817C employs a PNP epitaxial planar structure with MBIT (Multi-Base Integrated Technology) to enhance breakdown ruggedness and switching consistency. Its wide SOA supports linear operation under high-voltage, high-current transients typical in analog power amplifier output stages.

Electrical behavior is characterized by hFE = 35–200 across IC = –1 A to –5 A, VBE ≈ –1.5 V at IC = –5 A, and switching times of ton ≤ 0.56 µs, tstg ≤ 3.3 µs, and tf ≤ 0.4 µs - enabling stable AF power amplification up to ~15 MHz.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO–140 V: Maximum sustainable collector-emitter voltage before avalanche in common-emitter configuration.
IC (continuous)–12 A: Continuous DC collector current rating at Tc = 25°C with heatsink.
PC (Tc=25°C)120 W: Maximum power dissipation achievable with case temperature maintained at 25°C.
hFE @ IC=–5 A35–200: Current gain range defining base drive requirements for full-output linear operation.
fT≥10 MHz: Minimum transition frequency ensuring adequate bandwidth for audio-frequency power amplification.
VCE(sat)≤–2.0 V @ IC=–5 A / IB=–0.5 A: Saturation voltage limiting conduction loss and thermal stress in Class AB output pairs.
Cob140 pF @ VCB=–10 V: Output capacitance affecting high-frequency stability and Miller effect in amplifier feedback networks.

Pinout & Package

2SB817C is housed in a TO-3PB metal package with integral mounting flange, optimized for direct heatsink attachment and low thermal resistance. The package meets JEDEC TO-3PB mechanical dimensions (20.0 × 15.6 × 4.8 mm), with center-tab isolation and standardized lead spacing.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal; requires negative bias relative to emitter to turn on; drives IC via hFE-scaled current.
2CollectorMain current sink terminal; electrically connected to metal case/flange; must be isolated from heatsink unless specified.
3EmitterCurrent source terminal; typically tied to positive rail in PNP output stage; reference for VBE and VCE.

Key Features

FeatureDesign Value
Wide Safe Operating Area (ASO)Rated for 120 W at Tc=25°C and robust secondary breakdown immunity enables reliable linear operation under dynamic load conditions.
MBIT process technologyMulti-Base Integrated Technology improves uniformity of current distribution and reduces localized hot-spot formation during high-current pulses.
High breakdown voltageVCBO = –160 V and VCEO = –140 V support operation in high-rail audio amplifiers (±70 V rails) with margin against transient overvoltage.
Low saturation voltageVCE(sat) ≤ –2.0 V at IC = –5 A minimizes conduction loss and junction heating in Class AB output stages.

Applications

High-Fidelity Audio AmplifiersProfessional PA Output Stages

Use Scenario: Dual-rail ±60 V linear power amplifier delivering 100+ W into 4 Ω loads with low THD.

IC Role / Device Role / Timing Role: PNP complementary output transistor in push-pull pair with NPN 2SD1047C; handles negative half-cycle current sinking.

Use Value: High ASO and 120 W dissipation enable sustained full-power output without thermal runaway or secondary breakdown.

Use Scenario: 200 W concert-grade PA amplifier requiring rugged output devices for long-duration high-SPL operation.

IC Role / Device Role / Timing Role: Main PNP output switch in quasi-complementary output stage; operates in linear region with active bias control.

Use Value: VCEO = –140 V provides headroom above ±70 V supply rails, reducing risk of catastrophic failure during clipping or reactive load transients.

Industrial Linear Power SuppliesTest Equipment Output Drivers

Use Scenario: Programmable DC bench supply with 0–100 V / 0–10 A adjustable output using series pass regulation.

IC Role / Device Role / Timing Role: PNP series pass transistor dissipating up to 80 W continuously under worst-case dropout conditions.

Use Value: TO-3PB package and 120 W Tc-rated dissipation allow single-device implementation without parallel devices or complex thermal management.

Use Scenario: Precision AC/DC signal generator output stage driving 50 Ω or reactive test loads with minimal distortion.

IC Role / Device Role / Timing Role: Final PNP buffer transistor delivering high-current, low-phase-error signals up to 10 MHz.

Use Value: fT ≥ 10 MHz and low Cob (140 pF) preserve signal integrity and phase linearity across audio and lower RF bands.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-power linear transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD47T4GTO-220AB package; lower PC = 50 W; VCEO = –100 V; hFE min = 30.Not suitable for >80 W continuous output or ±70 V rails; limited SOA for linear use.Select only for cost-sensitive, lower-power (<50 W), space-constrained designs where TO-3PB mounting is impractical.
BD711TO-3 package; VCEO = –100 V; IC = –12 A; PC = 125 W; no MBIT process; lower fT (~3 MHz).Compatible in Class AB audio but lacks 2SB817C's high-frequency linearity and ASO margin at high VCE.Acceptable for legacy audio designs where bandwidth <5 MHz suffices and VCE stress remains below 90 V.

Compared with MJD47T4G and BD711, the 2SB817C delivers superior safe operating area at high VCE, higher fT, and MBIT-enhanced ruggedness - making it uniquely suited for demanding linear AF output stages requiring simultaneous high voltage, high current, and wide bandwidth.

Availability

2SB817C is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, professional PA systems, and industrial linear power supplies requiring stable component supply, long-lifecycle availability, and traceable sourcing of legacy SANYO power transistors.

Supply support for 2SB817C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and optoelectronic components before its acquisition by Panasonic in 2011. Its power transistor division emphasized rugged, high-reliability discrete devices for industrial and audio markets.

The 2SB817C belongs to SANYO's high-power AF output transistor family, engineered specifically for linear amplifier output stages demanding wide SOA, high breakdown voltage, and stable gain across current and temperature ranges.

FAQ

What is the maximum continuous collector current rating for the 2SB817C?

The 2SB817C has a maximum continuous collector current (IC) rating of –12 A at case temperature Tc = 25°C. This rating assumes proper heatsinking and derates linearly with increasing case temperature per the PC–Tc curve in the datasheet. Operation beyond this limit risks thermal runaway or secondary breakdown, especially under high VCE conditions.

Is the 2SB817C pin-compatible with the 2SD1047C?

No, the 2SB817C and 2SD1047C are complementary PNP/NPN devices with identical TO-3PB packages and pinout (Base–Collector–Emitter), but they are not functionally interchangeable due to opposite polarity. The 2SB817C sinks current from emitter to collector when biased, while the 2SD1047C sources it - requiring mirrored circuit topology in push-pull designs.

What does "MBIT process" mean for the 2SB817C?

MBIT (Multi-Base Integrated Technology) is SANYO's proprietary fabrication method for the 2SB817C that integrates multiple base regions to improve current uniformity and reduce localized heating. This enhances secondary breakdown immunity and allows stable linear operation at high current densities - a key differentiator versus standard planar PNP transistors like BD711.

Can the 2SB817C be used in switching applications?

The 2SB817C is optimized for linear operation, not fast switching. Its storage time (tstg) up to 3.3 µs and relatively high Cob (140 pF) make it unsuitable for high-frequency SMPS or digital switching. However, it can handle low-frequency (<10 kHz), high-energy switching such as relay drivers or lamp dimmers where SOA and ruggedness outweigh speed requirements.

What is the recommended heatsink interface for the 2SB817C TO-3PB package?

The 2SB817C TO-3PB metal case serves as the collector terminal and must be electrically isolated from the heatsink using a mica or ceramic insulator plus thermal grease unless the circuit design intentionally references the heatsink to collector potential. Mounting torque should not exceed 0.7 N·m to avoid package deformation or internal bond wire damage.

2SB817C Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-3P-3, SC-65-3
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
12 A
Voltage - Collector Emitter Breakdown (Max):
140 V
Vce Saturation (Max) @ Ib, Ic:
2V @ 500mA, 5A
Current - Collector Cutoff (Max):
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1A, 5V
Power - Max:
2.5 W
Frequency - Transition:
10MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-3P-3

2SB817C FAQ

1.How can I place an order for 2SB817C through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB817C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB817C reliable?

The price and inventory of 2SB817C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB817C is usually 5 days.

3.What payment methods are accepted for 2SB817C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB817C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB817C?

2SB817C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB817C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB817C?

For technical support, including 2SB817C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB817C requirements.

6.How does Aetrix verify that 2SB817C is sourced from the original manufacturer or authorized distributors?

All 2SB817C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB817C meets industry standards.

7.What is the process for return or replacement of 2SB817C?

All 2SB817C units undergo pre-shipment inspection (PSI). If there is an issue with 2SB817C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB817C part is unused and in its original packaging.

Return procedure for 2SB817C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SB817C Tags

  • 2SB817C
  • 2SB817C PDF
  • 2SB817C Datasheet
  • 2SB817C Specifications
  • 2SB817C Images
  • onsemi
  • onsemi 2SB817C
  • Buy 2SB817C
  • 2SB817C Price
  • 2SB817C Distributor
  • 2SB817C Supplier
  • 2SB817C Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER