onsemi 2SB824R

Overview

2SB824R from SANYO Semiconductor is a PNP epitaxial planar silicon power transistor designed for high-current switching applications, with V_CEO = −50 V, I_C = −5 A, V_CE(sat) ≤ −0.4 V at I_C = −3 A / I_B = −0.3 A, and f_T = 30 MHz. It is commonly used in relay drivers, high-speed inverters, and DC-DC converters requiring robust saturation performance.

For engineers reviewing the 2SB824R datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed V_CE(sat) at high I_C, TO-220 package thermal capability (P_C = 30 W at T_C = 25°C), h_FE classification (Rank R: 100–200 at I_C = −1 A), and verified switching times (t_on = 0.1 μs, t_f = 0.2 μs).

Technical Context

The 2SB824R operates as a medium-power PNP bipolar junction transistor optimized for linear and saturated switching modes. Its −50 V V_CEO rating and −5 A continuous collector current support industrial-level load control, while its low −0.4 V saturation voltage minimizes conduction loss in high-duty-cycle applications.

Designed with epitaxial planar structure, it delivers stable h_FE across temperature (70–280 at I_C = −1 A) and exhibits predictable switching behavior: t_on = 0.1 μs, t_stg = 1.4 μs, t_f = 0.2 μs under specified test conditions (V_CC = −20 V, R_L = 10 Ω, I_C = −2 A). Cob = 100 pF at V_CB = −10 V enables stable high-frequency operation up to 30 MHz f_T.

Key Specifications

Pinout & Package

2SB824R is housed in a through-hole TO-220AB package (SANYO designation) with standard 3-pin configuration and integral metal tab for heatsink mounting. The case is electrically connected to the collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD2955G and 2SA1943, the 2SB824R offers the best balance of low saturation loss (−0.4 V), fast switching (0.2 μs t_f), and TO-220 thermal efficiency (30 W) for 24–48 V industrial switching-making it optimal where conduction loss and board area are primary constraints.

Availability

2SB824R is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC converter switches, motor control H-bridge legs, and high-speed inverters requiring stable component supply, long-term manufacturability, and traceable sourcing.

Supply support for 2SB824R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2013. Known for high-reliability industrial transistors and regulators.

The 2SB824R belongs to SANYO's legacy PNP/NPN complementary power transistor family (2SB824/2SD1060), engineered specifically for robust, high-current switching in industrial automation, power conversion, and motor control systems.

FAQ

What is the maximum continuous collector current rating for the 2SB824R?

The 2SB824R has a maximum continuous collector current (I_C) rating of −5 A at case temperature T_C = 25°C with adequate heatsinking. Derating is required above 25°C per the PC–Tc curve in the datasheet; at T_C = 80°C, usable I_C drops to approximately −3.2 A. This rating assumes proper PCB copper area and thermal interface to maintain junction temperature below 150°C.

Does the 2SB824R have a built-in base-emitter resistor?

No, the 2SB824R is a standard three-terminal PNP bipolar transistor without any integrated base-emitter resistors. It requires external base drive circuitry-including a current-limiting resistor-to establish the required I_B for saturation (e.g., −0.3 A for −3 A I_C). This discrete architecture gives designers full control over switching speed and bias stability.

What is the guaranteed V_CE(sat) for the 2SB824R under typical operating conditions?

The 2SB824R guarantees V_CE(sat) ≤ −0.4 V at I_C = −3 A and I_B = −0.3 A, measured at T_A = 25°C. This value is confirmed across all Rank R units (h_FE = 100–200) and forms the basis for conduction loss calculation: P_sat = |V_CE(sat) × I_C| ≈ 1.2 W at full rated current.

Can the 2SB824R be used in parallel configurations for higher current handling?

Yes, the 2SB824R can be paralleled, but requires careful attention to emitter ballasting resistors (typically 0.1–0.22 Ω per device) and matched h_FE bins (e.g., all Rank R) to ensure current sharing. Without balancing, thermal runaway may occur due to negative temperature coefficient of V_CE(sat). Parallel use is documented in SANYO's application notes for high-current relay drivers.

Is the metal tab on the 2SB824R TO-220 package electrically connected to any internal terminal?

Yes, the metal tab on the 2SB824R TO-220AB package is internally connected to the collector terminal (Pin 2). This must be accounted for in mechanical layout: if mounted to a grounded heatsink, the collector is referenced to system ground-requiring appropriate isolation for high-side switch configurations or use of insulating pads and shoulder washers.