onsemi 2SB824S

Overview

2SB824S from SANYO Semiconductor is a PNP epitaxial planar silicon power transistor designed for high-current switching applications, with V_CEO = −50 V, I_C = −5 A, P_C = 1.75 W (T_a = 25°C), V_CE(sat) ≤ −0.4 V at I_C = −3 A / I_B = −0.3 A, and f_T = 30 MHz - used in relay drivers, inverters, and DC-DC converters.

For engineers reviewing the 2SB824S datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed V_CE(sat) performance at 3 A, TO-220 package thermal derating behavior, h_FE rank classification (Q/R/S), and safe operating area under pulsed I_CP = −9 A conditions.

Technical Context

The 2SB824S operates as a medium-power PNP bipolar junction transistor optimized for linear and saturated switching modes. Its −50 V V_CEO rating and −5 A continuous collector current support robust operation in industrial DC control stages, while its 30 MHz f_T enables reliable performance up to high-speed switching frequencies.

Thermal design relies on case-to-ambient dissipation limits (1.75 W at T_a = 25°C) and higher 30 W capability at T_c = 25°C, indicating mandatory heatsinking for sustained >1 A loads. Switching times are specified as t_on = 0.1 μs, t_stg = 1.4 μs, and t_f = 0.2 μs under defined test conditions with R_B = 1 Ω and R_L = 10 Ω.

Key Specifications

Pinout & Package

2SB824S is housed in a through-hole TO-220AB package (SANYO designation), with standardized mechanical dimensions: 15.1 mm height, 10.2 mm width, 4.5 mm depth, and 2.7 mm mounting hole spacing. The package features a metal tab electrically connected to the collector terminal and requires isolation when mounted to grounded heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with 2SB824S, the 2SB1260Z offers enhanced voltage safety margin at minor V_CE(sat) cost, while the MJD2955G delivers double the current rating in an insulated-package variant - both require updated thermal design and h_FE-based bias verification.

Availability

2SB824S is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC converter switches, inverter half-bridge legs, and high-current linear regulators requiring stable component supply across extended production lifecycles.

Supply support for 2SB824S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2013; known for high-reliability industrial transistors and optoelectronics.

The 2SB824S belongs to SANYO's legacy PNP/NPN power transistor family targeting robust switching in industrial controls, power conversion, and motor drive applications - engineered for stable h_FE, low saturation loss, and repeatable SOA performance.

FAQ

What is the maximum continuous collector current rating for the 2SB824S?

The 2SB824S has a maximum continuous collector current (I_C) rating of −5 A at ambient temperature T_a = 25°C with appropriate heatsinking. This rating decreases with rising ambient temperature per the derating curve in the datasheet, and the device supports up to −9 A in pulsed operation (10 ms). Designers must ensure thermal design accounts for V_CE(sat) and switching losses to avoid exceeding the 1.75 W ambient-limited power dissipation.

Does the 2SB824S have a built-in base-emitter resistor?

No, the 2SB824S is a standard three-terminal PNP bipolar transistor without any integrated base-emitter resistors. It requires external base drive circuitry - typically a current-limiting resistor or active driver - to deliver the specified −0.3 A base current for full saturation at −3 A collector current. This discrete architecture gives designers full control over biasing, speed, and thermal feedback paths.

What is the pin configuration of the 2SB824S in its TO-220 package?

The 2SB824S uses a standard TO-220AB pinout: Pin 1 (left, when tab facing outward) is Base, Pin 2 (center) is Collector (electrically connected to the metal tab), and Pin 3 (right) is Emitter. This configuration is consistent across SANYO's TO-220 PNP transistors and must be verified against PCB silkscreen orientation to prevent reverse-bias damage during assembly.

How does the h_FE ranking (Q/R/S) affect circuit design for the 2SB824S?

The 2SB824S is binned into h_FE ranks Q (70–140), R (100–200), and S (140–280) at V_CE = −2 V and I_C = −1 A. Designers must select base drive components - especially base resistors - based on the minimum h_FE of the intended rank to guarantee saturation across all units. Using rank-S parts with rank-Q biasing risks incomplete turn-on and excessive power dissipation in the 2SB824S.

Can the 2SB824S be used in parallel for higher current handling?

Parallel operation of multiple 2SB824S devices is not recommended without individual emitter resistors and matched h_FE bins, due to negative temperature coefficient of V_CE(sat) and inherent gain variation. Uneven current sharing can cause thermal runaway. For >5 A requirements, a single higher-rated device like the MJD2955G or redesign using a MOSFET-based solution is preferred over paralleling the 2SB824S.