onsemi 2SB825R

Overview

2SB825R from SANYO is a PNP epitaxial planar silicon transistor designed for high-current switching applications, with V_CEO = –50 V, I_C = –7 A, P_C = 40 W, V_CE(sat) ≤ –0.4 V at I_C = –4 A / I_B = –0.4 A, and h_FE = 70–140 (Class R). It drives solenoids and operates in high-speed inverters.

For engineers reviewing the 2SB825R datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-220AB package, DC current gain classification (R-grade), safe operating area (ASO) under pulsed conditions, and saturation voltage performance at high collector current.

Technical Context

The 2SB825R is a discrete PNP bipolar junction transistor optimized for linear and switching operation in power control circuits. Its design emphasizes low V_CE(sat), wide ASO up to I_CP = –12 A (1 ms pulse), and stable h_FE across –1 A to –7 A collector current range at V_CE = –2 V.

It features a single-die silicon construction with epitaxial planar process, rated for junction temperatures up to +150 °C and storage from –55 °C to +150 °C. Absolute maximum ratings include V_CB0 = –60 V, V_EB0 = –6 V, and I_CM = –14 A (non-repetitive peak).

Key Specifications

Pinout & Package

SANYO TO-220AB package: 3-pin through-hole, vertical mounting, metal tab electrically connected to collector (Pin 2), non-isolated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Compared with 2SB825R, 2SB817 offers reduced cost and footprint but sacrifices 28% current capacity and thermal margin, while MJD2955G delivers greater peak current and ruggedness at the expense of tighter h_FE control and layout compatibility.

Availability

2SB825R is available at Aetrix Electronics and suitable for industrial motor control, solenoid actuation, DC-AC inverter output stages, and programmable power supply regulation requiring stable component supply and long-lifecycle support.

Supply support for 2SB825R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power transistors, optoelectronics, and analog ICs before its acquisition by Panasonic in 2012; known for high-reliability discrete devices.

The 2SB825R belongs to SANYO's universal high-current PNP transistor family, engineered specifically for robust switching in industrial automation, power conversion, and electromechanical actuation systems.

FAQ

What is the h_FE classification for 2SB825R?

The 2SB825R is classified as Class R, with DC current gain (h_FE) guaranteed between 70 and 140 at V_CE = –2 V and I_C = –1 A. This binning ensures predictable base drive requirements across production units and simplifies bias network design for reliable saturation in switching applications using the 2SB825R.

Is the collector tab of 2SB825R electrically isolated?

No, the metal tab on the 2SB825R TO-220AB package is electrically connected to Pin 2 (collector). When mounting to a heatsink, electrical isolation via mica washer or silicone pad is required unless the heatsink is floating or biased to collector potential. This differs from isolated-tab variants like MJD2955G, and must be accounted for in PCB layout and grounding schemes for the 2SB825R.

What is the maximum pulsed collector current for 2SB825R?

The 2SB825R supports a non-repetitive peak collector current (I_CP) of –12 A for pulse widths up to 1 ms, as defined by its Safe Operating Area (ASO) curve. This rating applies under single-pulse conditions with proper heatsinking and ambient temperature ≤ 25 °C, and is critical for managing inductive kickback in solenoid and motor drive applications using the 2SB825R.

Can 2SB825R be used in linear regulator applications?

Yes, the 2SB825R can operate in linear mode as a series pass transistor, leveraging its 40 W power dissipation rating and stable h_FE over temperature. However, thermal design must ensure junction temperature remains ≤ +150 °C - typically requiring a heatsink with θ_JA ≤ 3.1 °C/W for 25 °C ambient. Linear use of the 2SB825R demands careful SOA analysis at the intended V_CE and I_C operating point.

What is the recommended base resistor value for saturating 2SB825R at I_C = –7 A?

For saturation at I_C = –7 A with h_FE(min) = 70 and V_BE(sat) ≈ –1.2 V (from datasheet curves), a forced β of 10–20 is recommended. Using I_B = –0.7 A (β = 10) and V_CC = –12 V, R_B ≈ (–12 V + 1.2 V) / 0.7 A ≈ 15.4 Ω. A standard 15 Ω, 2 W resistor ensures reliable turn-on and accounts for V_BE variation across temperature and unit variance for the 2SB825R.