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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB880

Name: 2SB880
Brand: onsemi
SKU: 2SB880
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB880

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: 2SB880.pdf

Description:: TRANS PNP DARL 60V 4A TO-220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB880 from SANYO is a PNP epitaxial planar silicon Darlington transistor in TO-220AB package, rated for V_CEO = –60 V, I_C = –4 A, P_C = 1.75 W at T_c = 25 °C, with h_FE ≥ 2000 at I_C = –2 A, used in relay drivers, printer hammer drivers, and motor control stages.

For engineers reviewing the 2SB880 datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed high DC current gain (h_FE ≥ 2000), low V_CE(sat) ≤ –1.5 V at I_C = –2 A, wide safe operating area (SOA) up to –6 A/–100 V single-pulse, and TO-220AB thermal performance with no heatsink derating to 1.2 W at 25 °C ambient.

Technical Context

The 2SB880 integrates two cascaded PNP transistors in a monolithic Darlington configuration, delivering high current amplification while maintaining low base drive requirements. Its SOA is explicitly characterized for pulse widths from 1 ms to 100 ms, with maximum collector-emitter voltage limited to –100 V at I_C = –6 A under single-pulse conditions.

Electrical behavior is defined at T_a = 25 °C and T_c = 25 °C, with saturation voltages measured at I_C/I_B = 500. The device exhibits V_BE(sat) ≤ –2.0 V and V_CE(sat) ≤ –1.5 V at I_C = –2 A, enabling efficient switching in medium-power linear and switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–60 V - Maximum collector-emitter voltage before breakdown with open base; defines upper rail limit in high-side switch designs.
I_C (DC)	–4 A - Continuous collector current rating; supports sustained load currents up to 4 A in relay or solenoid driver circuits.
P_C (T_c=25°C)	1.75 W - Power dissipation capability at case temperature 25 °C; requires heatsinking above ~0.8 W in ambient operation.
h_FE	≥2000 @ I_C=–2 A, V_CE=–2 V - High DC current gain reduces required base drive current to ≤1 mA for 2 A output, easing microcontroller interface.
V_CE(sat)	≤–1.5 V @ I_C=–2 A, I_B=–4 mA - Low saturation voltage minimizes conduction loss and heat generation in on-state switching applications.
f_T	2 MHz @ V_CE=–5 V, I_C=–2 A - Transition frequency limits usable switching speed; suitable for <100 kHz PWM or logic-level switching, not RF.

Pinout & Package

SANYO TO-220AB package: insulated tab, vertical mounting, 3-pin through-hole configuration with metal tab electrically connected to collector.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives low-current drive signal; requires ≤–4 mA base current to saturate at –2 A collector load.
2 (Collector)	High-current output node	Connected to metal tab; must be electrically isolated from heatsink unless collector-common topology is intended.
3 (Emitter)	Current return path	Typically tied to system ground or positive rail in high-side configurations; carries full load current.

Key Features

Feature	Design Value
High DC current gain	h_FE ≥ 2000 enables direct drive from logic-level outputs without external pre-driver stages.
Large current capacity	Rated –4 A continuous and –6 A pulsed (10 ms) supports industrial solenoids, relays, and small motors.
Wide ASO (Area of Safe Operation)	SOA curve validated up to –100 V / –6 A single-pulse ensures robustness against inductive kickback in relay/motor loads.
Low saturation voltage	V_CE(sat) ≤ –1.5 V at –2 A reduces power loss to <3 W and eases thermal management in compact layouts.

Applications

Relay Driver Circuit	Printer Hammer Driver
Use Scenario: Driving 24 V, 500 mA electromagnetic relays in PLC I/O modules with microcontroller GPIO. IC Role / Device Role / Timing Role: High-gain PNP Darlington switch providing galvanic isolation and current amplification between logic and coil. Use Value: Eliminates need for discrete base-resistor networks; V_CE(sat) ≤ –1.5 V ensures <0.75 W dissipation at full load, avoiding active cooling.	Use Scenario: Actuating impact-type print hammers in dot-matrix printers requiring fast turn-on/turn-off pulses. IC Role / Device Role / Timing Role: Medium-speed switching element controlling coil current with defined rise/fall times (t_ON = 0.6 µs, t_OFF = 2.7 µs). Use Value: SOA-rated for 10 ms pulses up to –6 A allows reliable hammer strike energy delivery without secondary breakdown.
Voltage Regulator Pass Element	Motor Driver Stage
Use Scenario: Series pass transistor in adjustable linear regulators delivering up to 3 A at 5–15 V output. IC Role / Device Role / Timing Role: Linear-mode current amplifier regulating output by modulating base voltage in response to error signal. Use Value: High h_FE reduces base drive burden on op-amp error amplifier; low V_CE(sat) improves dropout margin and efficiency.	Use Scenario: H-bridge half-bridge leg driving 12 V, 2 A DC brush motors in embedded motion control systems. IC Role / Device Role / Timing Role: High-side PNP switch enabling bidirectional control when paired with NPN complement (e.g., 2SD1190). Use Value: Matched SOA and switching characteristics with 2SD1190 allow symmetrical bridge timing and balanced thermal stress.

Relay Driver Circuit

Printer Hammer Driver

Use Scenario: Driving 24 V, 500 mA electromagnetic relays in PLC I/O modules with microcontroller GPIO.

IC Role / Device Role / Timing Role: High-gain PNP Darlington switch providing galvanic isolation and current amplification between logic and coil.

Use Value: Eliminates need for discrete base-resistor networks; V_CE(sat) ≤ –1.5 V ensures <0.75 W dissipation at full load, avoiding active cooling.

Use Scenario: Actuating impact-type print hammers in dot-matrix printers requiring fast turn-on/turn-off pulses.

IC Role / Device Role / Timing Role: Medium-speed switching element controlling coil current with defined rise/fall times (t_ON = 0.6 µs, t_OFF = 2.7 µs).

Use Value: SOA-rated for 10 ms pulses up to –6 A allows reliable hammer strike energy delivery without secondary breakdown.

Voltage Regulator Pass Element

Motor Driver Stage

Use Scenario: Series pass transistor in adjustable linear regulators delivering up to 3 A at 5–15 V output.

IC Role / Device Role / Timing Role: Linear-mode current amplifier regulating output by modulating base voltage in response to error signal.

Use Value: High h_FE reduces base drive burden on op-amp error amplifier; low V_CE(sat) improves dropout margin and efficiency.

Use Scenario: H-bridge half-bridge leg driving 12 V, 2 A DC brush motors in embedded motion control systems.

IC Role / Device Role / Timing Role: High-side PNP switch enabling bidirectional control when paired with NPN complement (e.g., 2SD1190).

Use Value: Matched SOA and switching characteristics with 2SD1190 allow symmetrical bridge timing and balanced thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD2955G	V_CEO = –60 V, I_C = –10 A, h_FE = 20–200 (lower gain), TO-220 package	Higher current rating but lower h_FE requires larger base drive; lacks SOA characterization beyond DC ratings	Select when higher peak current is needed and base drive circuitry can supply >20 mA.
BD679	V_CEO = –80 V, I_C = –4 A, h_FE = 750–5000, TO-126 package	Higher V_CEO, wider h_FE range, smaller package with lower thermal mass and no insulated tab	Select when board space is constrained and insulation from heatsink is not required.

Compared with MJD2955G and BD679, the 2SB880 offers uniquely high guaranteed h_FE (≥2000) and detailed SOA data for pulse operation, making it preferred for low-base-drive, inductive-load switching where thermal reliability under transient overload is critical.

Availability

2SB880 is available at Aetrix Electronics and suitable for relay drivers, printer hammer drivers, and voltage regulators requiring stable component supply across industrial automation, office equipment, and power management designs.

Supply support for 2SB880 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog and power devices before its acquisition by Panasonic in 2012; known for high-reliability discrete transistors and ICs.

The 2SB880 belongs to SANYO's ENN924E series of high-gain Darlington transistors designed specifically for medium-power switching applications including electromechanical actuation and linear regulation.

FAQ

What is the maximum continuous collector current rating for the 2SB880?

The 2SB880 has a maximum continuous collector current (I_C) rating of –4 A at T_c = 25 °C. This rating assumes proper heatsinking; derating applies above 25 °C case temperature per the PC–Tc curve. At ambient temperature (T_a = 25 °C) with no heatsink, the usable continuous current drops to approximately –1.2 A due to thermal limitations.

Does the 2SB880 have an insulated tab, and how is the collector terminal connected?

Yes, the 2SB880 uses the SANYO TO-220AB package with an electrically insulated metal tab. Pin 2 (collector) is internally connected to this tab, allowing direct mechanical mounting to a heatsink without electrical shorting-critical for high-side switch configurations where collector is at high potential.

What is the guaranteed DC current gain (h_FE) of the 2SB880, and under what conditions is it specified?

The 2SB880 guarantees h_FE ≥ 2000 at I_C = –2 A and V_CE = –2 V, measured at T_a = 25 °C. This high gain enables microcontroller-level base drive (≤ –4 mA) to fully saturate the device, reducing drive circuit complexity compared to standard bipolar transistors.

Can the 2SB880 be used in parallel with other transistors for higher current handling?

No-Darlington transistors like the 2SB880 are not recommended for paralleling due to thermal runaway risk from positive temperature coefficient of V_BE and mismatched h_FE. The datasheet provides no derating guidance or matching specifications for parallel operation; use a single higher-rated device instead.

What are the absolute maximum ratings for base-emitter voltage and collector-base voltage of the 2SB880?

The 2SB880 has V_BO_C = –70 V (collector-to-base, open emitter) and V_BO_E = –6 V (emitter-to-base, open collector). Exceeding either-even momentarily-risks permanent degradation. These ratings define safe biasing limits during off-state voltage transients or inductive flyback events.

2SB880 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP - Darlington

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1.5V @ 4mA, 2A

Current - Collector Cutoff (Max):: 100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 2000 @ 2A, 2V

Power - Max:: 1.75 W

Frequency - Transition:: 20MHz

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

2SB880 FAQ

1.How can I place an order for 2SB880 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB880 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB880 reliable?

The price and inventory of 2SB880 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB880 is usually 5 days.

3.What payment methods are accepted for 2SB880?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB880 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB880?

2SB880 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB880 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB880?

For technical support, including 2SB880 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB880 requirements.

6.How does Aetrix verify that 2SB880 is sourced from the original manufacturer or authorized distributors?

All 2SB880 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB880 meets industry standards.

7.What is the process for return or replacement of 2SB880?

All 2SB880 units undergo pre-shipment inspection (PSI). If there is an issue with 2SB880, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB880 part is unused and in its original packaging.

Return procedure for 2SB880:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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