onsemi 2SB883
- Part No.:
- 2SB883
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
2SB883.pdf
- Description:
- TRANS PNP DARL 60V 15A TO-3PB
- Quantity:
- Payment:

- Shipping:

Inventory:7,382
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SB883 from SANYO is a PNP epitaxial planar silicon Darlington transistor in TO-3PB package, rated for VCEO = –70 V, IC = –1.5 A, PC = 0.7 W at Tc = 25°C, with hFE ≥ 2000 at IC = –0.7 A and VCE = –2 V, used in relay drivers, printer hammer drivers, and voltage regulator control circuits.
For engineers reviewing the 2SB883 datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed high DC current gain (hFE ≥ 2000), low VCE(sat) ≤ –1.5 V at IC/IB = 500, wide safe operating area (ASO) up to –20 A peak, –70 V breakdown, and TO-3PB thermal performance with Tj max = +150°C.
Technical Context
The 2SB883 employs a monolithic Darlington configuration with integrated base-emitter resistor network, enabling high-current switching with minimal drive current. Its electrical behavior is characterized by VBE(sat) ≤ –2.0 V at IC/IB = 500 and VCE(sat) ≤ –1.5 V under same conditions, supporting efficient operation in inductive load switching.
Thermal design relies on case-mounted heat sinking: maximum power dissipation drops linearly from 0.7 W at Tc = 25°C to zero at Tc = +150°C, with junction-to-case thermal resistance RθJC ≈ 179°C/W implied by datasheet curves. Safe operating area is validated for single-pulse durations from 1 ms to 100 ms at ICP = –20 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | –70 V: Maximum collector-emitter voltage before avalanche; defines upper limit for inductive flyback energy handling in relay/motor driver applications. |
| IC (DC) | –1.5 A: Continuous collector current rating; determines steady-state load capability in voltage regulator control or solenoid driving. |
| hFE | ≥2000 at IC = –0.7 A, VCE = –2 V: High DC current gain enables microampere-level base drive for milliampere collector loads, reducing MCU GPIO burden. |
| VCE(sat) | ≤–1.5 V at IC/IB = 500: Low saturation voltage minimizes conduction loss and self-heating during active switching in high-duty-cycle drivers. |
| PC | 0.7 W at Tc = 25°C: Power dissipation limit at case temperature; requires heatsinking for sustained >100 mA operation above ambient. |
| Tj max | +150°C: Maximum junction temperature; sets thermal design margin when mounted on PCB with TO-3PB mechanical interface. |
Pinout & Package
SANYO TO-3PB package: metal case with insulated mounting flange, 3-terminal through-hole configuration, designed for direct heatsink attachment and high-power dissipation in industrial driver modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input node | Receives low-current drive signal; internal Darlington structure amplifies this into high collector current; base-emitter resistor network simplifies external biasing. |
| 2 (Collector) | High-side current sink | Connected to positive rail in high-side switch configurations; carries full load current; electrically tied to metal case in TO-3PB for thermal path. |
| 3 (Emitter) | Output reference node | Common return path for load current; floating relative to ground in high-side topology; must be routed with low-inductance trace for fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain | hFE ≥ 2000 ensures <1 mA base drive suffices for 1 A collector load, easing microcontroller interfacing without external pre-driver stages. |
| Wide safe operating area (ASO) | Validated up to –20 A peak at –16 V for 1–100 ms pulses, enabling robust transient overload tolerance in relay coil and printer hammer actuation. |
| Low saturation voltage | VCE(sat) ≤ –1.5 V at IC/IB = 500 reduces conduction loss to <1.5 W at 1 A, critical for thermally constrained industrial enclosures. |
| Integrated base-emitter resistor | Eliminates need for external base pull-down; prevents spurious turn-on during noise transients or MCU reset states in embedded control systems. |
Applications
| Relay Driver Circuits | Printer Hammer Drivers |
|---|---|
Use Scenario: Driving 12–24 V DC relays with coil currents up to 1.2 A in PLC output modules and industrial I/O cards. IC Role / Device Role / Timing Role: High-gain PNP Darlington switch providing galvanically isolated load control from low-voltage logic signals. Use Value: Enables direct drive from 3.3 V/5 V microcontrollers with <500 µA base current, eliminating discrete pre-driver stages and saving board space. |
Use Scenario: Actuating impact-type printer hammers requiring short-duration, high-current pulses (up to –20 A peak) with precise timing control. IC Role / Device Role / Timing Role: Fast-switching current sink delivering controlled pulse energy to electromagnetic hammer coils. Use Value: Wide ASO supports 1–100 ms pulses at –20 A without secondary breakdown, ensuring reliable dot-matrix print head operation over 10M cycles. |
| Voltage Regulator Control | Motor Driver Stages |
Use Scenario: Series pass element in linear voltage regulators delivering up to 1.5 A output current with adjustable output voltage. IC Role / Device Role / Timing Role: High-current, high-gain series pass transistor regulating output by modulating base drive in feedback loop. Use Value: Low VCE(sat) minimizes dropout voltage and power loss, improving efficiency in 5 V/3.3 V low-dropout regulator designs. |
Use Scenario: Low-side or high-side switch in brushed DC motor H-bridge half-bridges for small industrial actuators and positioning systems. IC Role / Device Role / Timing Role: Current-handling switch controlling motor winding current direction and magnitude via PWM. Use Value: High hFE allows clean PWM switching at 1–20 kHz with minimal gate drive complexity, reducing EMI in motion control subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SB1260 | VCEO = –100 V, IC = –2 A, hFE ≥ 1000, TO-3PB package | Higher voltage rating but lower hFE; suitable where flyback voltage exceeds –70 V but high gain is less critical. | Select 2SB1260 when system flyback energy demands higher VCEO margin, accepting reduced current gain for improved ruggedness. |
| 2SB1182 | VCEO = –60 V, IC = –1 A, hFE ≥ 2000, TO-126 package | Lower voltage/current ratings and smaller TO-126 package; lacks TO-3PB thermal mass and ASO robustness. | Choose 2SB1182 only for space-constrained, low-power versions of relay or regulator circuits where peak current <1 A and Tc < 85°C. |
Compared with 2SB883, 2SB1260 offers greater voltage safety margin but sacrifices current gain and thermal capacity, while 2SB1182 trades package robustness and peak current capability for compactness-neither is pin-compatible, requiring layout revision for substitution.
Availability
2SB883 is available at Aetrix Electronics and suitable for relay drivers, printer hammer drivers, and voltage regulator control applications requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial automation and legacy equipment maintenance.
Supply support for 2SB883 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power transistors, analog ICs, and optoelectronics before its acquisition by Panasonic in 2011; known for rugged, high-reliability discrete devices.
The 2SB883 belongs to SANYO's ENN1036B family of high-gain PNP Darlington transistors engineered for industrial driver applications demanding low drive current, high surge tolerance, and stable performance across –40°C to +120°C ambient.
FAQ
What is the maximum continuous collector current rating for the 2SB883?
The 2SB883 has a maximum continuous collector current (IC) rating of –1.5 A at Tc = 25°C. This rating assumes proper heatsinking and derates linearly with increasing case temperature, reaching zero at Tc = +150°C. Operation above –1.5 A requires verification against the SOA curve for pulse duration and voltage conditions. The 2SB883 must not be operated beyond this limit without confirming thermal and electrical margins in the target application.
Does the 2SB883 include an internal base-emitter resistor?
Yes, the 2SB883 integrates a base-emitter resistor network that provides automatic turn-off biasing, eliminating the need for an external pull-down resistor. This feature enhances noise immunity and prevents unintended conduction during microcontroller reset or signal glitches. The internal resistor ensures stable off-state behavior in the 2SB883, making it suitable for safety-critical driver stages where reliability is paramount.
What is the safe operating area (SOA) limit for single-pulse operation of the 2SB883?
The 2SB883 SOA is specified for single-pulse durations of 1 ms, 10 ms, and 100 ms, with peak collector current reaching –20 A at VCE = –16 V. These limits are defined at Tc = 25°C and assume no second breakdown. For reliable use, designers must consult the SOA graph (ITR08575) and ensure operating points remain within the bounded region for the intended pulse width. The 2SB883 SOA does not support DC operation above –1.5 A.
Can the 2SB883 be used as a direct replacement for the 2SD1193 in complementary circuits?
No, the 2SB883 is a PNP Darlington transistor and the 2SD1193 is its NPN complement; they are not interchangeable. While both share the same TO-3PB package and appear together in the ENN1036B datasheet, their polarity, pinout orientation, and biasing requirements differ fundamentally. Substituting 2SB883 for 2SD1193 would reverse circuit functionality and likely cause failure. Always verify polarity and schematic role before using either device.
What is the typical DC current gain (hFE) of the 2SB883 at operating conditions?
The 2SB883 guarantees hFE ≥ 2000 at IC = –0.7 A and VCE = –2 V, with typical values reaching 5000 under those conditions. Gain remains usable down to IC = –10 mA and up to IC = –1.2 A, though it decreases at extremes. This high and stable hFE is a defining characteristic of the 2SB883, enabling efficient low-drive switching in industrial control applications.
2SB883 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP - Darlington
- Current - Collector (Ic) (Max):
- 15 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 14mA, 7A
- Current - Collector Cutoff (Max):
- 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 2000 @ 7A, 2V
- Power - Max:
- 70 W
- Frequency - Transition:
- 20MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3PB
2SB883 FAQ
1.How can I place an order for 2SB883 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SB883 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SB883 reliable?
The price and inventory of 2SB883 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB883 is usually 5 days.
3.What payment methods are accepted for 2SB883?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB883 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SB883?
2SB883 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SB883 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SB883?
For technical support, including 2SB883 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB883 requirements.
6.How does Aetrix verify that 2SB883 is sourced from the original manufacturer or authorized distributors?
All 2SB883 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB883 meets industry standards.
7.What is the process for return or replacement of 2SB883?
All 2SB883 units undergo pre-shipment inspection (PSI). If there is an issue with 2SB883, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SB883 part is unused and in its original packaging.
Return procedure for 2SB883:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SB883 Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

