onsemi 2SB926S

Overview

2SB926S from onsemi is a PNP epitaxial planar silicon transistor designed for large-current switching in power supplies, relay drivers, and lamp drivers. It delivers V_CEO = –25 V, I_C = –2 A continuous, V_CE(sat) = –0.4 V at –1.5 A/–75 mA, f_T = 150 MHz, and operates up to T_j = 150 °C.

For engineers reviewing the 2SB926S datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage under high-current pulse conditions, DC current gain (h_FE) classification per rank (R–U), safe operating area (ASO) performance, and TO-92 compatible leadframe geometry.

Technical Context

The 2SB926S employs FBET and MBIT fabrication processes to achieve low V_CE(sat) and wide ASO. Its PNP polarity and –25 V V_CEO rating position it for medium-voltage, medium-current linear and switching roles in discrete power stages.

It supports pulsed operation up to I_CP = –5 A with 10 ms–100 ms single-pulse capability and exhibits h_FE = 100–560 (rank-dependent) at V_CE = –2 V, enabling stable biasing across production lots when selected by h_FE bin.

Key Specifications

Pinout & Package

2SB926S is housed in a TO-92 plastic package with 3 leads: emitter (pin 1), collector (pin 2), base (pin 3). The package conforms to JEDEC TO-92 outline and supports through-hole mounting with standard 2.54 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Compared with 2SA1015 and MJD2955, the 2SB926S occupies a distinct niche: it delivers 2 A continuous current in a compact TO-92 package with optimized V_CE(sat) and ASO-making it ideal for cost-sensitive, space-constrained medium-current applications where neither signal-level nor high-power alternatives suffice.

Availability

2SB926S is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and power supply regulation requiring stable component supply, consistent h_FE binning, and TO-92 form factor compatibility.

Supply support for 2SB926S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2SB926S belongs to onsemi's legacy discrete bipolar transistor family engineered for robust, high-reliability medium-current switching in industrial and consumer power electronics.

FAQ

What is the maximum continuous collector current rating for the 2SB926S?

The 2SB926S has a maximum continuous collector current (I_C) rating of –2 A at T_a = 25 °C. This rating assumes proper PCB copper area and ambient airflow; derating is required above 25 °C per the published P_C–T_a curve. At –1.5 A, the device achieves guaranteed V_CE(sat) ≤ –0.4 V with –75 mA base drive, making the 2SB926S well-suited for sustained 1.5 A switching in relay and lamp driver applications.

Does the 2SB926S have a specified gain-bandwidth product (f_T)?

Yes, the 2SB926S has a minimum gain-bandwidth product (f_T) of 150 MHz, measured at V_CE = –10 V and I_C = –50 mA. This f_T value confirms suitability for audio-frequency amplification, feedback compensation in linear regulators, and fast-switching control circuits where phase margin and transient response are critical. The 2SB926S maintains usable gain well into the VHF range, distinguishing it from general-purpose low-f_T transistors.

How is h_FE binned for the 2SB926S, and why does it matter?

The 2SB926S is binned into four h_FE ranks (R, S, T, U) based on measurement at V_CE = –2 V and I_C = –100 mA: R (100–200), S (140–280), T (200–400), U (280–560). This binning allows designers to select units matching precise base drive requirements-e.g., rank U enables smaller base resistors in microcontroller-driven circuits, while rank R offers tighter gain tolerance for analog biasing. The 2SB926S datasheet specifies both min/max and typical h_FE values per rank.

What is the safe operating area (ASO) capability of the 2SB926S?

The 2SB926S features a wide, validated safe operating area (ASO) supporting pulsed collector currents up to –5 A with pulse widths from 1 ms to 100 ms. This ASO performance is confirmed in the datasheet's SOA graph and enables reliable switching of inductive loads (e.g., relay coils, solenoids) without secondary breakdown. Unlike many general-purpose transistors, the 2SB926S maintains stability under simultaneous high-voltage and high-current stress, a key requirement for industrial electrical equipment.

Is the 2SB926S packaged in a standard TO-92 outline?

Yes, the 2SB926S uses a standard TO-92 plastic package with lead configuration: pin 1 = emitter, pin 2 = collector, pin 3 = base. Its mechanical dimensions match JEDEC TO-92 specifications, including 2.54 mm lead pitch and 4.0 mm body width. This ensures compatibility with existing TO-92 footprints, wave soldering profiles, and automated assembly equipment-making the 2SB926S a drop-in replacement for other TO-92 PNP transistors with matching electrical specs.