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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB926T-AA

Name: 2SB926T-AA
Brand: onsemi
SKU: 2SB926T-AA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB926T-AA

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2SB926T-AA.pdf

Description:: TRANS PNP 25V 2A 3-NP

Quantity:: RFQ Add To RFQ list

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Inventory:40,500

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Product details

Overview

2SB926T-AA from onsemi is a PNP epitaxial planar silicon transistor designed for large-current switching in power supplies, relay drivers, and lamp drivers. It delivers V_CEO = –25 V, I_C = –2 A continuous, V_CE(sat) = –0.4 V at –1.5 A/–75 mA, f_T = 150 MHz, and operates up to T_j = 150 °C.

For engineers reviewing the 2SB926T-AA datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage under high-current pulse conditions, DC current gain ranking (Rank T: h_FE = 200–400 at –100 mA), and ASO boundary compliance for robust switching reliability.

Technical Context

This PNP bipolar junction transistor uses FBET and MBIT fabrication processes to achieve low V_CE(sat) and wide Active Safe Operating Area (ASO). Its –25 V V_CEO and –30 V V_CBO support medium-voltage DC control circuits, while 150 MHz f_T enables use in moderate-speed switching up to ~100 kHz with minimal phase lag.

The device is optimized for linear and saturated-mode operation with specified h_FE bins (R/S/T/U) and guaranteed V_BE(sat) = –0.85 to –1.2 V at –1.5 A. Thermal resistance R_θJA is not explicitly listed but inferred from P_C = 0.75 W and T_j(max) = 150 °C rating at T_A = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–25 V: Maximum collector-emitter voltage before breakdown in common-emitter configuration; defines safe DC bus voltage margin.
I_C (cont.)	–2 A: Continuous collector current rating; supports relay coils up to ~100 Ω at 24 V or lamp loads up to 48 W.
V_CE(sat)	–0.4 V max at –1.5 A/–75 mA: Low conduction loss reduces heat generation in high-duty-cycle switching.
f_T	150 MHz: Gain-bandwidth product enabling stable amplification or fast edge response in driver stages.
h_FE (Rank T)	200–400 at –100 mA: Binned DC current gain ensures predictable base drive requirements in production designs.
P_C	0.75 W: Maximum power dissipation at T_A = 25 °C; requires heatsinking above ~0.3 W in enclosed environments.

Pinout & Package

2SB926T-AA is housed in a TO-126 (SANYO NP) plastic package with 3 leads: Emitter (Pin 1), Collector (Pin 2), Base (Pin 3). The package features a metal tab connected to the collector for thermal and electrical connection to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit path for PNP device	Connected to higher-potential rail; base-emitter junction forward-biased during turn-on.
2 (Collector)	Current entry path; tied to heatsink tab	Electrically and thermally coupled to PCB copper or external heatsink; must be isolated if floating.
3 (Base)	Control terminal for minority-carrier injection	Requires current-limited drive (e.g., 75 mA for 1.5 A output); sensitive to ESD per JEDEC JESD22-A114.

Key Features

Feature	Design Value
Low V_CE(sat)	–0.4 V max at –1.5 A enables <1 W conduction loss in 24 V relay drivers, reducing thermal stress.
Wide ASO	Guaranteed safe operating area up to –1.5 A / –2 V allows reliable switching of inductive loads without secondary breakdown.
h_FE binning (Rank T)	200–400 at –100 mA simplifies base resistor selection and improves batch-to-batch consistency in production.
High f_T	150 MHz supports clean square-wave response in PWM lamp dimming circuits up to 50 kHz.

Applications

Power Supply Switching	Relay Driver Stage
Use Scenario: High-side switch in 12–24 V linear or quasi-resonant SMPS pre-regulator stages. IC Role / Device Role / Timing Role: PNP pass transistor controlling output voltage via emitter-follower configuration. Use Value: Low V_CE(sat) minimizes dropout and thermal rise at 1–2 A load, extending capacitor life and improving efficiency.	Use Scenario: Driving 24 VDC, 500 mW coil relays in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Saturated-switch amplifier converting microcontroller GPIO logic to relay coil current. Use Value: Guaranteed h_FE ≥200 ensures ≤75 mA base drive suffices for 1.5 A coil current, easing MCU GPIO loading.
Lamp Load Control	Electrical Equipment Interface
Use Scenario: Dimmable incandescent or halogen lamp driver in building automation panels. IC Role / Device Role / Timing Role: PWM-controlled current sink in emitter-grounded configuration. Use Value: 150 MHz f_T preserves PWM edge integrity at 1–10 kHz, preventing audible lamp buzz and ensuring smooth dimming.	Use Scenario: Level-shifting interface between 3.3 V logic and 24 V field-side sensors/actuators. IC Role / Device Role / Timing Role: Inverting level translator with current gain for noise-immune signal coupling. Use Value: –25 V V_CEO provides 10 V margin over 24 V nominal field bus, enhancing surge immunity per IEC 61000-4-5.

Power Supply Switching

Relay Driver Stage

Use Scenario: High-side switch in 12–24 V linear or quasi-resonant SMPS pre-regulator stages.

IC Role / Device Role / Timing Role: PNP pass transistor controlling output voltage via emitter-follower configuration.

Use Value: Low V_CE(sat) minimizes dropout and thermal rise at 1–2 A load, extending capacitor life and improving efficiency.

Use Scenario: Driving 24 VDC, 500 mW coil relays in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Saturated-switch amplifier converting microcontroller GPIO logic to relay coil current.

Use Value: Guaranteed h_FE ≥200 ensures ≤75 mA base drive suffices for 1.5 A coil current, easing MCU GPIO loading.

Lamp Load Control

Electrical Equipment Interface

Use Scenario: Dimmable incandescent or halogen lamp driver in building automation panels.

IC Role / Device Role / Timing Role: PWM-controlled current sink in emitter-grounded configuration.

Use Value: 150 MHz f_T preserves PWM edge integrity at 1–10 kHz, preventing audible lamp buzz and ensuring smooth dimming.

Use Scenario: Level-shifting interface between 3.3 V logic and 24 V field-side sensors/actuators.

IC Role / Device Role / Timing Role: Inverting level translator with current gain for noise-immune signal coupling.

Use Value: –25 V V_CEO provides 10 V margin over 24 V nominal field bus, enhancing surge immunity per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SB1182	V_CEO = –20 V, I_C = –1.5 A, V_CE(sat) = –0.5 V @ –1 A	Lower voltage and current ratings; narrower ASO	Acceptable where bus voltage ≤18 V and peak load <1.2 A; lower cost in low-volume procurement.
MJD2955T4G	V_CEO = –60 V, I_C = –10 A, P_C = 1.5 W, TO-220 package	Higher voltage/current capability; larger footprint and thermal mass	Preferred for 48 V systems or >3 A loads; requires PCB layout revision and heatsink re-evaluation.

Compared with 2SB926T-AA, 2SB1182 offers reduced voltage headroom and lower current capacity, while MJD2955T4G provides significantly higher ratings at the cost of board space and thermal design complexity-neither is pin-compatible, requiring schematic and layout updates.

Availability

2SB926T-AA is available at Aetrix Electronics and suitable for power supplies, relay drivers, lamp drivers, and electrical equipment requiring stable component supply across industrial OEM and embedded control programs.

Supply support for 2SB926T-AA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SB926T-AA belongs to onsemi's legacy bipolar power transistor family engineered for high-reliability, medium-current switching in industrial control and power conversion systems.

FAQ

What is the maximum continuous collector current rating for the 2SB926T-AA?

The 2SB926T-AA has a maximum continuous collector current (I_C) rating of –2 A at T_A = 25 °C. Derating is required above 25 °C ambient per the P_C = 0.75 W limit and thermal resistance curve. At 70 °C ambient, usable I_C drops to approximately –1.3 A to maintain junction temperature below 150 °C. Always verify actual board-level thermal performance using the 2SB926T-AA's published SOA curves.

Does the 2SB926T-AA have a built-in base-emitter resistor?

No, the 2SB926T-AA is a standard three-terminal PNP bipolar transistor without any integrated base-emitter resistors. It requires an external base current limiting resistor or active drive circuit to control collector current. This discrete architecture allows full design flexibility in gain setting, speed optimization, and thermal feedback integration-unlike digital transistors which embed bias resistors.

What does the "T-AA" suffix indicate in 2SB926T-AA?

The "T-AA" suffix in 2SB926T-AA denotes a specific manufacturing lot and h_FE bin: "T" indicates Rank T (h_FE = 200–400 at –100 mA, –2 V), and "AA" identifies the tape-and-reel packaging format per onsemi's ordering nomenclature. This binning ensures consistent base drive requirements across production units of the 2SB926T-AA.

Can the 2SB926T-AA replace the 2SB926 in existing designs?

Yes, the 2SB926T-AA is a direct replacement for the base 2SB926, sharing identical absolute maximum ratings, electrical characteristics, pinout, and TO-126 package. The "T-AA" variant adds tighter h_FE binning (Rank T) and standardized tape-and-reel packaging-no schematic or layout changes are needed when upgrading to 2SB926T-AA in legacy 2SB926 designs.

Is the collector tab of the 2SB926T-AA electrically isolated?

No, the metal tab on the 2SB926T-AA package is internally connected to the collector terminal (Pin 2). When mounted to a heatsink, the collector becomes electrically tied to the heatsink potential. Electrical isolation requires insulating hardware (e.g., mica washer + shoulder washer) and dielectric thermal compound. Failure to isolate may cause short circuits in floating or reverse-polarity heatsink configurations.

2SB926T-AA Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 25 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 75mA, 1.5A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 100mA, 2V

Power - Max:: 750 mW

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 3-NP

2SB926T-AA FAQ

1.How can I place an order for 2SB926T-AA through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB926T-AA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB926T-AA reliable?

The price and inventory of 2SB926T-AA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB926T-AA is usually 5 days.

3.What payment methods are accepted for 2SB926T-AA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB926T-AA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB926T-AA?

2SB926T-AA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB926T-AA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB926T-AA?

For technical support, including 2SB926T-AA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB926T-AA requirements.

6.How does Aetrix verify that 2SB926T-AA is sourced from the original manufacturer or authorized distributors?

All 2SB926T-AA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB926T-AA meets industry standards.

7.What is the process for return or replacement of 2SB926T-AA?

All 2SB926T-AA units undergo pre-shipment inspection (PSI). If there is an issue with 2SB926T-AA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB926T-AA part is unused and in its original packaging.

Return procedure for 2SB926T-AA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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