onsemi 2SB927S-AE

Overview

2SB927S-AE from SANYO is a PNP epitaxial planar silicon transistor designed for high-current switching in power supplies, relay drivers, and lamp drivers. It delivers −2.5 A collector current, −30 V V_CBO, −25 V V_CEO, −6 V V_EBO, and 1.0 W power dissipation at T_j = 150°C.

For engineers reviewing the 2SB927S-AE datasheet, pinout, applications, or equivalent options, key selection criteria include its low saturation voltage (V_CE(sat) = −0.4 V at I_C = −1.5 A, I_B = −75 mA), wide safe operating area (ASO), and FBET/MBIT process-enhanced ruggedness for industrial load switching.

Technical Context

The 2SB927S-AE operates as a medium-power PNP bipolar junction transistor with fixed-emitter configuration and common-emitter gain characteristics. Its h_FE ranges from 100 to 200 at I_C = −0.1 A, V_CE = −2 V, supporting stable DC amplification and saturated switching.

Designed for linear and switching applications up to f_T = 150 MHz (I_C = −500 mA, V_CE = −10 V), it features low output capacitance (C_ob = 91 pF at V_CB = −10 V, f = 1 MHz) and thermal robustness across −55°C to +150°C storage and junction temperature ranges.

Key Specifications

Pinout & Package

2SB927S-AE is housed in a TO-126 plastic package (JEDEC TO-225AA), with lead-free plating and standard through-hole mounting. The case is electrically connected to the collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Compared with 2SB927S-AE, 2SB1260-Z trades voltage headroom for cost and 2SB927S-AE offers optimal balance of TO-126 compatibility, 25 V blocking, and 2.5 A capability, while MJD2955G provides scalability at the expense of form factor and thermal design overhead.

Availability

2SB927S-AE is available at Aetrix Electronics and suitable for power supplies, relay drivers, and lamp drivers requiring stable component supply and long-term industrial availability.

Supply support for 2SB927S-AE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer known for high-reliability discrete devices and analog ICs before its acquisition by Panasonic in 2012.

The 2SB927S-AE belongs to SANYO's legacy PNP power transistor family engineered for rugged industrial switching - emphasizing low saturation voltage, wide safe operating area, and process-controlled h_FE consistency.

FAQ

What is the maximum junction temperature rating for the 2SB927S-AE?

The 2SB927S-AE has a maximum junction temperature (T_j) rating of +150°C, as specified in its Absolute Maximum Ratings table. This allows operation in demanding industrial environments when properly heatsinked. Derating curves in the datasheet show allowable collector dissipation decreases linearly above +25°C ambient, reaching zero at +150°C case temperature. Always verify thermal design using the 2SB927S-AE's thermal resistance (R_θJC) and actual power dissipation.

Is the 2SB927S-AE RoHS compliant?

Yes, the 2SB927S-AE is RoHS compliant and lead-free, consistent with SANYO's post-2006 manufacturing standards. The TO-126 package uses matte tin-plated leads, and the device meets EU Directive 2011/65/EU requirements. No exemptions apply, and material declarations confirm absence of restricted substances above threshold limits. For full compliance documentation, refer to the official SANYO (now Panasonic Semiconductor Solutions) product change notice for 2SB927S-AE.

Can the 2SB927S-AE be used in linear amplifier applications?

The 2SB927S-AE supports linear operation within its Safe Operating Area (SOA), with h_FE stability across I_C = −10 mA to −1 A and V_CE ≤ −10 V. However, it is optimized for switching - not precision amplification - due to gain variation and lack of guaranteed linearity specs. For Class-A audio or instrumentation use, dedicated low-noise PNP transistors like BC557 or MPSA92 are preferred. The 2SB927S-AE remains viable for non-critical analog functions such as level shifting or simple current sources where 2SB927S-AE's SOA and gain meet circuit requirements.

What is the typical base-emitter turn-on voltage for the 2SB927S-AE?

The typical base-emitter forward voltage (V_BE) of the 2SB927S-AE is −1.2 V at I_C = −1.5 A and I_B = −75 mA, per the "V_BE vs. I_C" curve in the datasheet. At lower currents (e.g., I_C = −100 mA), V_BE drops to approximately −0.85 V. This negative polarity reflects its PNP structure: the base must be ~0.8–1.2 V below the emitter to achieve conduction. Designers should size base resistors accordingly when driving from NPN or logic-level sources.

Does the 2SB927S-AE have built-in protection features like thermal shutdown or overcurrent limiting?

No, the 2SB927S-AE is a bare-die bipolar transistor with no integrated protection circuitry. It relies entirely on external design safeguards - including base current limiting, collector snubbers, heatsinking, and SOA-aware layout - to prevent secondary breakdown, thermal runaway, or avalanche failure. The datasheet explicitly warns against exceeding absolute maximum ratings even momentarily. System-level protection (e.g., fast-acting fuses, current-sense resistors, or dedicated driver ICs) must be implemented separately to ensure reliability of the 2SB927S-AE in real-world applications.