onsemi 2SB927T-AE

Overview

2SB927T-AE from SANYO is a PNP epitaxial planar silicon transistor designed for high-current switching in power supplies, relay drivers, and lamp drivers. It delivers −2.5 A collector current, −30 V collector–emitter breakdown voltage (V_CEO), and low saturation voltage of −0.4 V at I_C = −1.5 A / I_B = −75 mA, enabling efficient large-current driving in industrial control circuits.

For engineers reviewing the 2SB927T-AE datasheet, pinout, applications, or equivalent options, key selection considerations include its −30 V V_CEO, −2.5 A I_C, −1.0 W P_C (at T_j = 25°C), TO-126 package footprint, and confirmed use in DC load switching where low V_CE(sat) and wide SOA are critical.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor with fixed-emitter configuration and common-emitter gain characteristics. Its h_FE ranges from 100 to 200 at V_CE = −2 V and I_C = −0.1 A, supporting stable DC amplification and saturated switching across ambient temperatures from −55°C to +150°C.

The 2SB927T-AE features a gain-bandwidth product (f_T) of 150 MHz at V_CE = −10 V and I_C = −50 mA, and output capacitance (C_ob) of 91 pF at V_CB = −10 V and f = 1 MHz - parameters validated for linear and switching operation in non-RF power interface stages.

Key Specifications

Pinout & Package

2SB927T-AE is housed in a TO-126 plastic package (JEDEC TO-225AA), with standardized 3-pin through-hole mounting and thermal pad on the collector tab for PCB heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Compared with 2SB927T-AE, 2SB1185 offers cost savings at reduced current capability, while MJD2955G provides higher voltage and current headroom at the expense of larger footprint and higher V_CE(sat); both require validation of h_FE consistency and SOA curves for the target duty cycle.

Availability

2SB927T-AE is available at Aetrix Electronics and suitable for power supplies, relay drivers, and lamp drivers requiring stable component supply and long-term industrial availability.

Supply support for 2SB927T-AE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by Panasonic in 2012; known for high-reliability industrial-grade transistors.

The 2SB927T-AE belongs to SANYO's general-purpose PNP transistor family engineered for robust DC switching and linear regulation in industrial control, power conversion, and electromechanical interface applications.

FAQ

What is the maximum collector–emitter voltage rating for 2SB927T-AE?

The 2SB927T-AE has an absolute maximum V_CEO rating of −30 V at T_a = 25°C. This specifies the highest reverse-biased voltage the transistor can withstand between collector and emitter with the base open. Exceeding this value risks avalanche breakdown. Derating is required above 25°C ambient, per the datasheet's thermal curve. The 2SB927T-AE must not be used in safety-critical systems like life-support or aircraft controls without formal qualification.

Does 2SB927T-AE support pulse current operation beyond its DC rating?

Yes, the 2SB927T-AE supports pulsed collector current up to −5 A for durations ≤10 ms, as defined by its Safe Operating Area (SOA) chart. This capability enables reliable switching of inductive loads such as relay coils and motor windings during turn-off transients. The 2SB927T-AE's SOA is validated at T_j = 25°C; actual pulse handling depends on junction temperature rise and PCB copper area. Always verify thermal design margins for repeated pulsing.

What is the typical DC current gain (h_FE) of 2SB927T-AE and how does it vary?

The 2SB927T-AE exhibits h_FE ranging from 100 to 200 at V_CE = −2 V and I_C = −0.1 A, with tighter binning available per ordering code. Gain decreases at higher collector currents (e.g., ~60–100 at I_C = −1.5 A) and rises slightly with temperature. The 2SB927T-AE's h_FE variation is consistent across production lots due to FBET process control, simplifying base resistor selection for predictable saturation.

Can 2SB927T-AE be used in linear amplifier configurations?

Yes, the 2SB927T-AE is characterized for linear operation with specified h_FE, f_T = 150 MHz, and output capacitance (C_ob = 91 pF), supporting audio-frequency amplification and analog signal conditioning. However, its primary design focus is switching; for precision linear applications, dedicated low-noise or matched-pair transistors are recommended. The 2SB927T-AE's performance in amplification must be verified under actual bias and thermal conditions.

What package type and mounting considerations apply to 2SB927T-AE?

The 2SB927T-AE uses a TO-126 (JEDEC TO-225AA) package with a metal collector tab thermally connected to pin 2. Mounting requires mechanical fixation and thermal interface to a heatsink or copper pour; electrical isolation is needed if the heatsink is grounded. Pin 1 is emitter, pin 2 is collector, pin 3 is base - orientation matches standard TO-126 silkscreen. The 2SB927T-AE's thermal resistance (R_θJA) is ~150°C/W without heatsinking, limiting continuous power to ~600 mW at 25°C ambient.