onsemi 2SB986T

Overview

2SB986T from SANYO Semiconductor is a PNP epitaxial planar silicon power transistor designed for medium-power switching applications, featuring V_CEO = −50 V, I_C = −4 A, P_C = 10 W (T_c = 25°C), and V_CE(sat) = −0.19 V (typ) at I_C = −2 A / I_B = −100 mA. It is used in relay drivers, lamp drivers, and industrial power supplies.

For engineers reviewing the 2SB986T datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE ≥ 100 at I_C = −100 mA, low saturation voltage under pulsed high-current conditions, wide active safe operating area (ASO), and TO-126 package thermal performance.

Technical Context

The 2SB986T operates as a medium-power PNP bipolar junction transistor with fixed-emitter configuration and base-controlled current amplification. Its FBET/MBIT process enables low V_CE(sat) and high f_T = 150 MHz, supporting fast switching in DC-DC converters and load switching circuits.

It exhibits rated breakdown voltages of V_(BR)CBO = −60 V and V_(BR)CEO = −50 V, with guaranteed h_FE range of 100–560 depending on rank (R–U), and Cob = 25 pF at V_CB = −10 V - enabling stable operation in inductive load switching where capacitive feedback and secondary breakdown must be managed.

Key Specifications

Pinout & Package

2SB986T is housed in a TO-126 plastic package with integral metal tab for mechanical mounting and thermal conduction. The case is electrically connected to the collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power switching applications.

Compared with MJD2955G and BD139, the 2SB986T delivers optimal balance of 4 A current capability, −50 V blocking, TO-126 thermal interface, and low −0.19 V V_CE(sat) - making it uniquely suited for space-constrained 2–4 A industrial switching where thermal management and drive simplicity are critical.

Availability

2SB986T is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and industrial power supplies requiring stable component supply, long-term obsolescence planning, and traceable sourcing from authorized channels.

Supply support for 2SB986T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2013; legacy products maintain industrial qualification and long-lifecycle support.

The 2SB986T belongs to SANYO's general-purpose power transistor family targeting cost-sensitive, reliability-critical industrial switching - emphasizing low saturation loss, wide SOA, and robust thermal packaging for non-automotive, non-medical equipment.

FAQ

What is the maximum continuous collector current rating for the 2SB986T?

The 2SB986T is rated for −4 A continuous collector current at case temperature T_c = 25°C. Derating applies above this temperature per the PC–Tc curve in the datasheet; at T_c = 75°C, maximum I_C drops to approximately −2.5 A. This rating assumes proper heatsinking and is validated under pulse-tested conditions with I_CP = −6 A for short durations. The 2SB986T must not be operated beyond its SOA limits even if average current appears within spec.

Is the 2SB986T pin-compatible with the 2SD1348 NPN counterpart?

No, the 2SB986T (PNP) and 2SD1348 (NPN) share the same TO-126 package outline and pin numbering (Emitter–Collector–Base), but their polarity and biasing requirements are opposite. While physical mounting is identical, circuit design must invert drive signals and reference potentials. The 2SB986T cannot substitute directly for the 2SD1348 without topology changes, and vice versa - they are complementary, not interchangeable, devices.

What is the typical V_CE(sat) of the 2SB986T under standard test conditions?

The typical V_CE(sat) of the 2SB986T is −0.19 V at I_C = −2 A and I_B = −100 mA (pulse test). The maximum specified value is −0.7 V under the same conditions. This low saturation voltage reduces conduction losses significantly compared to older PNP transistors, making the 2SB986T especially effective in high-duty-cycle switching applications where thermal management is constrained.

Does the 2SB986T have built-in protection features such as thermal shutdown or overcurrent limiting?

No, the 2SB986T is a discrete bipolar transistor without integrated protection circuitry. It relies entirely on external design measures - including base current limiting, heatsinking, SOA-aware layout, and current-sensing feedback - to prevent thermal runaway, secondary breakdown, or overvoltage failure. System-level protection must be implemented externally; the 2SB986T datasheet explicitly states that safe operation requires adherence to absolute maximum ratings and SOA boundaries defined in the application curves.

Can the 2SB986T be used in automotive applications?

The 2SB986T is specified for standard industrial and consumer electronics applications per SANYO's documentation and is not qualified to AEC-Q101 or other automotive reliability standards. Its datasheet explicitly excludes use in "special applications" including transportation machines and safety-critical systems. For automotive-grade equivalents, designers should select AEC-Q101-qualified PNP transistors with validated PPAP documentation - the 2SB986T is not recommended for under-hood or safety-related vehicle subsystems.