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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Renesas 2SC1213AB-E

Name: 2SC1213AB-E
Brand: Renesas
SKU: 2SC1213AB-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC1213AB-E

Manufacturer:: Renesas

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2SC1213AB-E.pdf

Description:: TRANS NPN 50V 0.5A TO-92

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Product details

Overview

2SC1213AB-E from Renesas Technology Corp. is a silicon NPN epitaxial transistor designed for low-frequency amplifier applications and complementary pairing with 2SA673/2SA673A. It features V_CBO = 50 V, V_CEO = 50 V, I_C = 500 mA, P_C = 400 mW, and h_FE = 100–200 (Group C), housed in a TO-92 package.

For engineers reviewing the 2SC1213AB-E datasheet, 2SC1213AB-E pinout, 2SC1213AB-E application, or 2SC1213AB-E equivalent, key selection criteria include breakdown voltage margin, DC current gain grouping, saturation voltage at 150 mA/15 mA drive, thermal derating curve compliance, and complementary PNP pairing capability with 2SA673A.

Technical Context

This discrete NPN bipolar junction transistor operates in linear amplification mode with guaranteed V_(BR)CEO ≥ 50 V and V_(BR)CBO ≥ 50 V at I_C = 1 mA and 10 µA respectively. Its h_FE is binned into Group C (100–200) per test condition V_CE = 3 V, I_C = 10 mA.

V_CE(sat) is specified at 0.2–0.6 V under pulsed conditions (I_C = 150 mA, I_B = 15 mA), and maximum junction temperature is rated at 150°C. The device uses standard TO-92 (1) leadframe construction with JEDEC/EIAJ conformance and 0.25 g mass.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CBO	50 V - Maximum reverse bias between collector and base before avalanche breakdown
V_CEO	50 V - Maximum collector-emitter voltage with base open, defining safe linear operating ceiling
I_C	500 mA - Continuous DC collector current limit, derated above 25°C per published curve
P_C	400 mW - Total power dissipation at T_a = 25°C; drops to zero at T_a = 150°C
h_FE (Group C)	100–200 - DC current gain range at V_CE = 3 V, I_C = 10 mA; enables predictable bias design
V_CE(sat)	0.2–0.6 V - Voltage drop across C–E at I_C = 150 mA / I_B = 15 mA; critical for low-loss switching
T_j	150°C - Absolute maximum junction temperature; sets thermal design margin for heatsinking

Pinout & Package

2SC1213AB-E is packaged in TO-92 (1), a through-hole plastic case conforming to JEDEC and EIAJ standards, with 0.25 g mass and lead pitch of 2.54 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit path for majority carriers	Connected to ground or low-impedance return; polarity defines NPN operation
2 (Collector)	Current entry path under forward active bias	Typically tied to supply rail via load resistor; handles full output current
3 (Base)	Control terminal for minority carrier injection	Receives current-limited drive signal; determines I_C = h_FE × I_B in active region

Key Features

Feature	Design Value
Complementary pairing	Validated match with 2SA673A for push-pull amplifier stages requiring matched gain and breakdown
h_FE binning (Group C)	Guaranteed 100–200 h_FE at V_CE = 3 V, I_C = 10 mA - reduces circuit gain variance in production
Low V_CE(sat)	0.2 V typical at I_C = 150 mA/I_B = 15 mA - minimizes conduction loss in switching or saturated-mode use
TO-92 mechanical standardization	JEDEC/EIAJ-compliant footprint - ensures compatibility with legacy PCB tooling and hand-soldering workflows

Applications

Audio Pre-amplifier Stage	DC Motor Driver (Low-Power)
Use Scenario: Low-noise voltage amplification in battery-powered portable audio devices operating below 1 MHz. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration. Use Value: 50 V breakdown rating provides headroom for 24 V rail designs; 100–200 h_FE enables stable bias with minimal feedback components.	Use Scenario: On/off control of brushed DC motors in consumer appliances drawing ≤300 mA continuous current. IC Role / Device Role / Timing Role: Single-ended switch in grounded-emitter topology driven by microcontroller GPIO. Use Value: 0.2 V typical V_CE(sat) limits resistive loss; 400 mW rating supports intermittent duty without heatsink.
Complementary Push-Pull Output	Industrial Sensor Signal Conditioning
Use Scenario: Output stage in discrete Class-B audio amplifier using 2SC1213AB-E and 2SA673A as matched pair. IC Role / Device Role / Timing Role: NPN half of complementary emitter-follower or common-emitter pair driving low-impedance loads. Use Value: Identical V_CEO/V_CBO ratings and h_FE binning ensure symmetrical clipping and crossover distortion reduction.	Use Scenario: Amplification of millivolt-level thermocouple or strain gauge signals in factory-floor instrumentation. IC Role / Device Role / Timing Role: First-stage transimpedance or differential amplifier with low input bias current requirement. Use Value: I_CBO ≤ 0.5 µA at V_CB = 20 V ensures minimal leakage-induced offset drift over temperature.

Audio Pre-amplifier Stage

DC Motor Driver (Low-Power)

Use Scenario: Low-noise voltage amplification in battery-powered portable audio devices operating below 1 MHz.

IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration.

Use Value: 50 V breakdown rating provides headroom for 24 V rail designs; 100–200 h_FE enables stable bias with minimal feedback components.

Use Scenario: On/off control of brushed DC motors in consumer appliances drawing ≤300 mA continuous current.

IC Role / Device Role / Timing Role: Single-ended switch in grounded-emitter topology driven by microcontroller GPIO.

Use Value: 0.2 V typical V_CE(sat) limits resistive loss; 400 mW rating supports intermittent duty without heatsink.

Complementary Push-Pull Output

Industrial Sensor Signal Conditioning

Use Scenario: Output stage in discrete Class-B audio amplifier using 2SC1213AB-E and 2SA673A as matched pair.

IC Role / Device Role / Timing Role: NPN half of complementary emitter-follower or common-emitter pair driving low-impedance loads.

Use Value: Identical V_CEO/V_CBO ratings and h_FE binning ensure symmetrical clipping and crossover distortion reduction.

Use Scenario: Amplification of millivolt-level thermocouple or strain gauge signals in factory-floor instrumentation.

IC Role / Device Role / Timing Role: First-stage transimpedance or differential amplifier with low input bias current requirement.

Use Value: I_CBO ≤ 0.5 µA at V_CB = 20 V ensures minimal leakage-induced offset drift over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-frequency amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC1815-Y	V_CEO = 50 V, h_FE = 120–240 (Y grade), same TO-92 package	Higher h_FE spread may require tighter bias resistor tolerance	Preferred when higher gain stability needed at I_C < 10 mA
KSC1845FTA	V_CEO = 60 V, h_FE = 70–140, TO-92, RoHS-compliant	Lower h_FE min requires larger base drive; wider voltage margin suits 36 V systems	Chosen for extended voltage headroom and modern environmental compliance

Compared with 2SC1213AB-E, 2SC1815-Y offers higher nominal h_FE but looser binning, while KSC1845FTA trades some gain for +10 V V_CEO margin and RoHS alignment-both require validation of base drive strength and thermal layout due to differing h_FE distributions.

Availability

2SC1213AB-E is available at Aetrix Electronics and suitable for low-frequency amplifier, complementary pair driver, and industrial sensor signal conditioning applications requiring stable component supply and long-term obsolescence management.

Supply support for 2SC1213AB-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. was formed in 2003 from the merger of Mitsubishi Electric's and Hitachi's semiconductor operations, specializing in microcontrollers, analog, logic, memory, and discrete devices.

The 2SC1213AB-E belongs to Renesas' legacy discrete transistor portfolio, originally developed by Hitachi for general-purpose linear amplification and switching in cost-sensitive industrial and consumer equipment.

FAQ

What is the h_FE range for 2SC1213AB-E and how is it binned?

The 2SC1213AB-E is binned into Group C with h_FE = 100–200 measured at V_CE = 3 V and I_C = 10 mA. This binning is confirmed per Hitachi's original specification document ADE-208-1048 (Z), and applies specifically to the 2SC1213AB-E variant. Designers should select base resistors assuming worst-case h_FE = 100 for reliable saturation or linear operation. The 2SC1213AB-E does not share h_FE bins with non-"AB" suffix variants.

Is 2SC1213AB-E pin-compatible with 2SC1213A?

Yes, 2SC1213AB-E and 2SC1213A share identical TO-92 (1) package dimensions, pin assignment (E-C-B), and mechanical outline per ADE-208-1048 (Z). Both comply with JEDEC and EIAJ standards and have identical 2.54 mm lead pitch. However, 2SC1213AB-E is explicitly binned to Group C (100–200 h_FE), whereas 2SC1213A may span Groups B–D unless further suffixed; always verify the marking code on the device body to confirm binning for 2SC1213AB-E.

What is the maximum allowable ambient temperature for continuous operation of 2SC1213AB-E?

The 2SC1213AB-E has a storage temperature range of –55°C to +150°C, but its maximum continuous ambient temperature depends on power dissipation. At P_C = 400 mW, T_a must not exceed 25°C; derating begins linearly above that point, reaching zero dissipation at T_a = 150°C. For example, at T_a = 75°C, max P_C ≈ 200 mW. This curve is published in Figure 1 of the ADE-208-1048 (Z) datasheet for 2SC1213AB-E.

Can 2SC1213AB-E be used as a direct replacement for 2SC1213 in existing designs?

2SC1213AB-E can replace generic 2SC1213 only if the design relies on Group C h_FE (100–200) and does not require the lower-voltage 2SC1213 (V_CEO = 35 V). The "AB-E" suffix denotes both the 50 V rating and Group C binning, unlike base 2SC1213. Substituting without verifying h_FE requirements and voltage margins may cause bias shift or overstress in 2SC1213AB-E-dependent circuits.

Does 2SC1213AB-E meet RoHS requirements?

The original 2SC1213AB-E, as documented in Hitachi's 2001 specification ADE-208-1048 (Z), predates RoHS legislation and does not carry RoHS certification. Renesas Technology Corp. did not issue a RoHS-compliant requalification for this specific variant. For new designs requiring RoHS compliance, consider alternatives like KSC1845FTA, which is explicitly RoHS-compliant and functionally comparable. Always verify material declarations directly with Renesas or authorized distributors for 2SC1213AB-E.

2SC1213AB-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 15mA, 150mA

Current - Collector Cutoff (Max):: 500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 3V

Power - Max:: 400 mW

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92

2SC1213AB-E FAQ

1.How can I place an order for 2SC1213AB-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC1213AB-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC1213AB-E reliable?

The price and inventory of 2SC1213AB-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC1213AB-E is usually 5 days.

3.What payment methods are accepted for 2SC1213AB-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC1213AB-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC1213AB-E?

2SC1213AB-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC1213AB-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC1213AB-E?

For technical support, including 2SC1213AB-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC1213AB-E requirements.

6.How does Aetrix verify that 2SC1213AB-E is sourced from the original manufacturer or authorized distributors?

All 2SC1213AB-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC1213AB-E meets industry standards.

7.What is the process for return or replacement of 2SC1213AB-E?

All 2SC1213AB-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC1213AB-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC1213AB-E part is unused and in its original packaging.

Return procedure for 2SC1213AB-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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