onsemi 2SC2314E

Overview

2SC2314E from SANYO is an NPN epitaxial planar silicon transistor designed for 27MHz CB transceiver driver applications. It features V_CEO = 45V, I_C = 100mA continuous, P_C = 750mW at T_c = 25°C, h_FE = 120–240 (at I_C = 5mA, V_CE = 5V), and f_T = 180MHz. Its TO-126 package supports medium-power RF amplification in compact transceiver stages.

For engineers reviewing the 2SC2314E datasheet, pinout, applications, or equivalent options, key selection criteria include its 27MHz small-signal gain-bandwidth performance, collector saturation voltage (V_CE(sat) ≤ 600mV at I_C/I_B = 10), thermal derating curve, and TO-126 mechanical mounting compatibility with heatsink interfaces.

Technical Context

The 2SC2314E operates as a medium-frequency, medium-current NPN RF amplifier with fixed-bias or emitter-degenerated configurations. Its f_T of 180MHz at V_CE = 10V, I_C = 50mA enables stable 27MHz driver-stage gain without oscillation when properly neutralized and decoupled.

It exhibits V_BE(sat) = 1.2V max at I_C/I_B = 10 and V_CE(sat) = 0.6V max under same conditions, supporting efficient Class-A or Class-AB operation in low-voltage CB transceiver power stages. Thermal resistance θ_JC is optimized for TO-126 copper-tab mounting.

Key Specifications

Pinout & Package

2SC2314E uses the TO-126 package: molded plastic case with metal collector tab (pin 2) for thermal and electrical connection. Pin 1 is Emitter, Pin 2 is Collector (tab), Pin 3 is Base - verified per SANYO specification sheet No.485–2/4.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with 2SC2314E, the 2SC2078 offers higher voltage tolerance but insufficient power handling for driver roles, while the 2SC2539 provides greater bandwidth and dissipation at the cost of stricter bias stability requirements and higher gain variability.

Availability

2SC2314E is available at Aetrix Electronics and suitable for CB radio transmitter drivers, 27MHz RF power amplifier stages, and amateur radio exciter modules requiring stable component supply and long-term legacy support.

Supply support for 2SC2314E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and RF discrete devices before its acquisition by Panasonic in 2012. Its transistor portfolio emphasized reliability and application-specific optimization.

The 2SC2314E belongs to SANYO's high-frequency NPN transistor family engineered specifically for 27MHz CB and land-mobile radio driver applications, balancing gain, speed, and thermal robustness in TO-126 packaging.

FAQ

What is the maximum operating frequency supported by the 2SC2314E?

The 2SC2314E has a gain-bandwidth product (f_T) of 180MHz at V_CE = 10V and I_C = 50mA. While it is specified for 27MHz CB transceiver driver use, its f_T confirms usable gain well above that frequency-however, stable 27MHz operation is guaranteed with proper neutralization and layout. The 2SC2314E is not characterized for switching or microwave applications beyond its intended RF amplifier role.

Can the 2SC2314E be used in Class-AB amplifier configurations?

Yes, the 2SC2314E supports Class-AB operation due to its low V_CE(sat) (≤600mV) and controlled h_FE spread (120–240). Its TO-126 collector tab enables effective heatsinking, critical for AB-stage thermal stability. Bias networks must be designed for I_CQ ≈ 10–20mA to maintain linearity at 27MHz, as confirmed by SANYO's test circuit data on No.485–3/4.

Is the 2SC2314E pin-compatible with other TO-126 NPN transistors like the 2N3055?

No-the 2SC2314E uses standard TO-126 pinout (1=E, 2=C, 3=B), but the 2N3055 follows the same mechanical footprint with identical pin assignment. However, electrical characteristics differ significantly: the 2N3055 is a high-power audio transistor (f_T ≈ 0.8MHz, P_C = 115W), making it unsuitable as a drop-in replacement for the 2SC2314E's 27MHz RF function. Direct substitution would result in severe gain loss and instability.

What is the recommended heatsinking approach for continuous 2SC2314E operation?

For continuous operation near its 750mW rating, the 2SC2314E requires direct mounting of its metal collector tab (Pin 2) to a heatsink using thermal compound and mechanical fastener. Derating curves in the datasheet show PC drops to ~300mW at T_a = 75°C with no heatsink. A minimum 10cm² aluminum heatsink is advised for sustained 27MHz driver use, as validated by SANYO's PC vs. T_a graph (ITR05126).

Does the 2SC2314E have built-in protection features such as ESD or overvoltage clamping?

No-the 2SC2314E is a bare silicon NPN transistor without integrated protection circuitry. It lacks ESD diodes, overvoltage clamps, or thermal shutdown. External protection-such as base-emitter resistors, collector snubbers, and input RF chokes-is required in 27MHz transceiver designs to prevent damage from static discharge, load mismatch, or transient voltage spikes, as explicitly noted in SANYO's application guidance.