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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC2712GT1G

Name: 2SC2712GT1G
Brand: onsemi
SKU: 2SC2712GT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC2712GT1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2SC2712GT1G.pdf

Description:: TRANS NPN 50V 0.15A SC-59

Quantity:: RFQ Add To RFQ list

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Inventory:221,980

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Product details

Overview

2SC2712GT1G from onsemi is an NPN medium-frequency amplifier transistor in SC-59 (SOT-23) package, rated for 50 V V_(BR)CEO, 200 mA I_C(P), and 80 MHz f_T, designed for low-to-medium-frequency wireless toy applications with lower V_CE(sat) and higher h_FE than MMBT3904.

For engineers reviewing the 2SC2712GT1G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, SC-59 terminal mapping, targeted performance comparisons, and real-world use context for battery-powered RF front-end and signal amplification stages.

Technical Context

This NPN bipolar junction transistor operates in linear amplification mode with a guaranteed DC current gain (h_FE) of 200–400 at I_C = 2.0 mA and V_CE = 6.0 V, supporting stable small-signal gain up to 80 MHz (f_T). Its 50 V V_(BR)CEO and 0.25 V max V_CE(sat) at I_C = 100 mA enable efficient switching and amplification in low-voltage portable circuits.

Thermal design is constrained by 200 mW power dissipation and 150°C maximum junction temperature, with moisture sensitivity level (MSL) 1 confirming unlimited floor life under standard handling - critical for high-volume automated assembly of consumer electronics.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)CEO	50 V - Supports rail voltages up to 50 V without breakdown in common-emitter configuration.
I_C(P)	200 mA - Enables drive capability for small-signal loads like RF modulator stages or LED drivers.
f_T	80 MHz - Sufficient for AM/FM IF amplification and 2.4 GHz ISM-band local oscillator buffer stages.
h_FE	200–400 - Delivers predictable current amplification with minimal base drive current in bias networks.
V_CE(sat)	≤ 0.25 V @ I_C=100 mA - Reduces conduction loss and improves battery efficiency in pulsed operation.
C_obo	≤ 3.5 pF - Limits Miller capacitance, preserving bandwidth in high-gain CE amplifier configurations.
NF	≤ 10 dB @ I_C=0.1 mA - Suitable for low-noise preamplifier roles in audio and narrowband RF receivers.

Pinout & Package

2SC2712GT1G uses the SC-59 (SOT-23) surface-mount package (Case 318D), with 3 terminals in a single-row configuration. Dimensions comply with JEDEC TO-236AB, enabling compatibility with standard SMT pick-and-place and reflow processes.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current sink node; connects to ground or emitter resistor in common-emitter amplifier topology.
2	Base	Control input; requires current-limited bias network to set operating point within h_FE range.
3	Collector	Current source node; ties to load resistor or next-stage input in amplification or switching paths.

Key Features

Feature	Design Value
Lower V_CE(sat) vs. MMBT3904	0.25 V max enables 15–20% lower conduction loss in battery-switched loads.
Higher h_FE vs. MMBT3904	200–400 range reduces required base drive current, simplifying bias network design.
60 V V_(BR)CBO	Provides 10 V margin above 50 V V_(BR)CEO, improving robustness against transient voltage spikes.
Pb-free construction	Meets RoHS Directive 2011/65/EU and J-STD-020 MSL 1 requirements for lead-free reflow.

Applications

Wireless Toy Transmitter Stage	Low-Voltage Audio Preamp
Use Scenario: Amplifies modulated RF signal before antenna coupling in 27 MHz/49 MHz remote-controlled toys. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with fixed bias. Use Value: 80 MHz f_T and low V_CE(sat) ensure clean output envelope and extended alkaline battery life.	Use Scenario: Boosts microphone-level signal to line-level in handheld voice recorders or talking dolls. IC Role / Device Role / Timing Role: Linear voltage amplifier with emitter-degeneration bias for stable gain. Use Value: 200–400 h_FE and ≤10 dB noise figure preserve SNR in low-power analog front ends.
ISM-Band Local Oscillator Buffer	LED Flasher Driver
Use Scenario: Isolates and drives 2.4 GHz crystal oscillator output into mixer stage in Bluetooth LE peripherals. IC Role / Device Role / Timing Role: Emitter-follower buffer providing low-impedance drive while maintaining frequency stability. Use Value: 3.5 pF C_obo minimizes loading on oscillator tank circuit, sustaining oscillation integrity.	Use Scenario: Switches high-brightness LEDs in intermittent flash patterns for novelty lighting or safety indicators. IC Role / Device Role / Timing Role: Digital switch in common-emitter saturation mode controlled by microcontroller GPIO. Use Value: 200 mA I_C(P) and 0.25 V V_CE(sat) allow direct drive of 3–5 LED strings without external driver IC.

Wireless Toy Transmitter Stage

Low-Voltage Audio Preamp

Use Scenario: Amplifies modulated RF signal before antenna coupling in 27 MHz/49 MHz remote-controlled toys.

IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with fixed bias.

Use Value: 80 MHz f_T and low V_CE(sat) ensure clean output envelope and extended alkaline battery life.

Use Scenario: Boosts microphone-level signal to line-level in handheld voice recorders or talking dolls.

IC Role / Device Role / Timing Role: Linear voltage amplifier with emitter-degeneration bias for stable gain.

Use Value: 200–400 h_FE and ≤10 dB noise figure preserve SNR in low-power analog front ends.

ISM-Band Local Oscillator Buffer

LED Flasher Driver

Use Scenario: Isolates and drives 2.4 GHz crystal oscillator output into mixer stage in Bluetooth LE peripherals.

IC Role / Device Role / Timing Role: Emitter-follower buffer providing low-impedance drive while maintaining frequency stability.

Use Value: 3.5 pF C_obo minimizes loading on oscillator tank circuit, sustaining oscillation integrity.

Use Scenario: Switches high-brightness LEDs in intermittent flash patterns for novelty lighting or safety indicators.

IC Role / Device Role / Timing Role: Digital switch in common-emitter saturation mode controlled by microcontroller GPIO.

Use Value: 200 mA I_C(P) and 0.25 V V_CE(sat) allow direct drive of 3–5 LED strings without external driver IC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3904LT1G	Lower h_FE (100–300), higher V_CE(sat) (0.3 V), same SC-59 package	Less gain margin in low-current bias; suitable where cost dominates over efficiency	Select when legacy BOM compatibility or lowest unit cost is prioritized over battery life.
BC846B,215	Higher V_(BR)CEO (65 V), slightly lower f_T (100 MHz), same SOT-23 footprint	Better voltage headroom but marginally reduced RF linearity at 80 MHz	Choose for designs requiring >55 V rail tolerance or tighter parametric consistency across temperature.

Compared with MMBT3904LT1G and BC846B,215, the 2SC2712GT1G offers superior h_FE and lower saturation voltage at 100 mA - directly extending battery runtime in pulsed wireless toys without changing PCB layout or thermal management.

Availability

2SC2712GT1G is available at Aetrix Electronics and suitable for wireless toy transmitter stages, low-voltage audio preamplifiers, and ISM-band local oscillator buffers requiring stable component supply and Pb-free compliance.

Supply support for 2SC2712GT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SC2712GT1G belongs to onsemi's general-purpose bipolar transistor product line, engineered specifically for cost-sensitive, battery-powered consumer electronics demanding improved gain and saturation performance over industry-standard equivalents.

FAQ

What is the maximum collector current rating for the 2SC2712GT1G?

The 2SC2712GT1G has a peak collector current rating of 200 mA (I_C(P)) and a continuous collector current rating of 150 mA (I_C). These values are specified at T_A = 25°C and define safe operating limits for pulsed and steady-state operation respectively - exceeding either may cause thermal runaway or permanent degradation of the 2SC2712GT1G.

Is the 2SC2712GT1G RoHS-compliant and lead-free?

Yes, the 2SC2712GT1G is explicitly marked as a Pb-free device in its official datasheet (Rev. 2, August 2006), conforms to RoHS Directive 2011/65/EU, and carries Moisture Sensitivity Level 1 - confirming full compatibility with lead-free reflow soldering profiles and unrestricted floor life under standard handling conditions for the 2SC2712GT1G.

How does the 2SC2712GT1G compare to the MMBT3904 in gain and saturation voltage?

The 2SC2712GT1G provides higher DC current gain (h_FE = 200–400 vs. 100–300 for MMBT3904) and lower collector-emitter saturation voltage (V_CE(sat) ≤ 0.25 V vs. ≤ 0.3 V) under identical test conditions - directly improving efficiency and signal fidelity in battery-powered amplification circuits using the 2SC2712GT1G.

What is the package type and pin configuration of the 2SC2712GT1G?

The 2SC2712GT1G uses the SC-59 (SOT-23) package with standardized pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This matches JEDEC TO-236AB mechanical dimensions and is compatible with automated placement equipment calibrated for SOT-23 footprints - ensuring seamless integration of the 2SC2712GT1G into high-volume manufacturing lines.

Can the 2SC2712GT1G be used in RF amplifier applications up to 80 MHz?

Yes, the 2SC2712GT1G is characterized with an f_T of 80 MHz at I_C = 1.0 mA and V_CE = 10.0 V, making it suitable for small-signal RF amplification in low-to-medium-frequency bands including AM/FM IF stages and 27/49 MHz wireless toy transmitters - provided proper impedance matching and bias stability are maintained per the 2SC2712GT1G datasheet guidelines.

2SC2712GT1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 150 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 6V

Power - Max:: 200 mW

Frequency - Transition:: 80MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-59

2SC2712GT1G FAQ

1.How can I place an order for 2SC2712GT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC2712GT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC2712GT1G reliable?

The price and inventory of 2SC2712GT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC2712GT1G is usually 5 days.

3.What payment methods are accepted for 2SC2712GT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC2712GT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC2712GT1G?

2SC2712GT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC2712GT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC2712GT1G?

For technical support, including 2SC2712GT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC2712GT1G requirements.

6.How does Aetrix verify that 2SC2712GT1G is sourced from the original manufacturer or authorized distributors?

All 2SC2712GT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC2712GT1G meets industry standards.

7.What is the process for return or replacement of 2SC2712GT1G?

All 2SC2712GT1G units undergo pre-shipment inspection (PSI). If there is an issue with 2SC2712GT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC2712GT1G part is unused and in its original packaging.

Return procedure for 2SC2712GT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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