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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC2812-5-TB-E

Name: 2SC2812-5-TB-E
Brand: onsemi
SKU: 2SC2812-5-TB-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC2812-5-TB-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2SC2812-5-TB-E.pdf

Description:: TRANS NPN 50V 0.15A 3-CP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC2812-5-TB-E from SANYO Semiconductor is an NPN epitaxial planar silicon transistor designed for low-frequency general-purpose amplifier applications. It features a 50 V collector-to-emitter breakdown voltage (V_CEO), 100 MHz gain-bandwidth product (f_T), and DC current gain (h_FE) of 135–270 at I_C = 1 mA, V_CE = 6 V - suitable for audio preamplifier stages and signal conditioning circuits in consumer electronics.

For engineers reviewing the 2SC2812-5-TB-E datasheet, pinout, applications, or equivalent options, key selection criteria include its miniature CP package, guaranteed h_FE rank "5", V_CEO = –50 V rating, f_T = 100 MHz performance, and suitability for linear amplification with low saturation voltage (V_CE(sat) ≤ 0.5 V at I_C/I_B = 50 mA/5 mA).

Technical Context

The 2SC2812-5-TB-E operates as a low-frequency linear amplifier transistor with fixed h_FE binning (Rank 5: 135–270) and is optimized for stable small-signal gain across ambient temperatures up to +75°C. Its f_T of 100 MHz at V_CE = 6 V, I_C = 1 mA confirms usable bandwidth beyond audio range while maintaining low noise and predictable h-parameter behavior.

It shares complementary PNP/NPN pairing with 2SA1179 and uses identical CP package dimensions and terminal assignments. Electrical characteristics are specified under standardized test conditions (T_a = 25°C unless noted), with derating curves provided for power dissipation (P_C = 200 mW at T_a ≤ 25°C, linearly reduced to 100 mW at T_a = 75°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–50 V - supports rail-to-rail operation in ±24 V amplifier supplies without breakdown.
f_T	100 MHz - enables stable gain in wideband audio and IF amplifier designs up to ~10 MHz.
h_FE (Rank 5)	135–270 at V_CE = 6 V, I_C = 1 mA - ensures consistent bias point stability in discrete gain stages.
V_CE(sat)	≤ 0.5 V at I_C = 50 mA, I_B = 5 mA - minimizes power loss and thermal rise in Class-A output stages.
C_ob	3.0 pF at V_CB = –6 V, f = 1 MHz - limits Miller effect in high-gain configurations.
P_C	200 mW at T_a ≤ 25°C - compatible with surface-mount PCB layouts without forced cooling.

Pinout & Package

Package: CP (SANYO's miniature plastic package, 3-pin, TO-92 compatible footprint; dimensions: 2.9 mm × 1.5 mm × 2.5 mm, lead pitch 1.1 mm).

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control electrode; requires current-limited drive (I_B ≤ 30 mA max) for safe switching or linear operation.
2	Emitter	Common reference node; connected to ground or negative rail in common-emitter amplifier topologies.
3	Collector	Output node; handles up to 150 mA continuous current and dissipates heat via PCB copper pour.

Key Features

Feature	Design Value
Guaranteed h_FE Rank 5	135–270 range ensures predictable DC biasing without manual sorting in production amplifier assemblies.
Low V_CE(sat)	0.1–0.5 V at I_C/I_B = 50 mA/5 mA reduces conduction loss and improves efficiency in Class-A stages.
Miniature CP Package	TO-92–compatible footprint enables high-density placement on compact audio PCBs without rework.
High V_CEO Rating	–50 V withstand capability allows use in higher-voltage analog rails (e.g., ±24 V op-amp supplies) without derating.

Applications

Audio Preamplifier Stage	Signal Level Shifter
Use Scenario: Low-noise voltage amplification of microphone or line-level signals before ADC input. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration. Use Value: h_FE consistency (Rank 5) and f_T = 100 MHz ensure flat 20 Hz–20 kHz response with <0.5% THD at 1 V_pp.	Use Scenario: Translating logic-level signals between 3.3 V microcontroller outputs and 5 V analog subsystems. IC Role / Device Role / Timing Role: Discrete level-shifting switch operating in active or saturation region. Use Value: Low V_CE(sat) ≤ 0.5 V and fast turn-on (t_on < 100 ns per h_FE-driven switching) minimize propagation delay and voltage drop.
DC Power Supply Error Amplifier	Industrial Sensor Signal Conditioning
Use Scenario: Error amplification in linear regulated power supplies requiring precise feedback loop gain. IC Role / Device Role / Timing Role: High-gain, low-drift transconductance stage in op-amp compensation networks. Use Value: Stable h_FE over temperature (±15% from –25°C to +75°C) maintains loop stability across environmental extremes.	Use Scenario: Amplifying low-amplitude bridge sensor outputs (e.g., strain gauges, RTDs) in factory automation modules. IC Role / Device Role / Timing Role: First-stage instrumentation amplifier input transistor with matched h_FE binning. Use Value: Tight h_FE spread (135–270) and low I_CBO ≤ 0.1 μA reduce offset drift and improve common-mode rejection.

Audio Preamplifier Stage

Signal Level Shifter

Use Scenario: Low-noise voltage amplification of microphone or line-level signals before ADC input.

IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration.

Use Value: h_FE consistency (Rank 5) and f_T = 100 MHz ensure flat 20 Hz–20 kHz response with <0.5% THD at 1 V_pp.

Use Scenario: Translating logic-level signals between 3.3 V microcontroller outputs and 5 V analog subsystems.

IC Role / Device Role / Timing Role: Discrete level-shifting switch operating in active or saturation region.

Use Value: Low V_CE(sat) ≤ 0.5 V and fast turn-on (t_on < 100 ns per h_FE-driven switching) minimize propagation delay and voltage drop.

DC Power Supply Error Amplifier

Industrial Sensor Signal Conditioning

Use Scenario: Error amplification in linear regulated power supplies requiring precise feedback loop gain.

IC Role / Device Role / Timing Role: High-gain, low-drift transconductance stage in op-amp compensation networks.

Use Value: Stable h_FE over temperature (±15% from –25°C to +75°C) maintains loop stability across environmental extremes.

Use Scenario: Amplifying low-amplitude bridge sensor outputs (e.g., strain gauges, RTDs) in factory automation modules.

IC Role / Device Role / Timing Role: First-stage instrumentation amplifier input transistor with matched h_FE binning.

Use Value: Tight h_FE spread (135–270) and low I_CBO ≤ 0.1 μA reduce offset drift and improve common-mode rejection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC2812-6-TB-E	h_FE Rank 6 (200–400); otherwise identical electrical specs and package.	Higher gain enables fewer stages in high-gain preamps but increases sensitivity to thermal drift.	Select when circuit requires >200 h_FE at I_C = 1 mA and can accommodate wider gain tolerance.
KSC1845FTA	Same CP package; V_CEO = –50 V, f_T = 120 MHz, h_FE = 120–240 (no binning), P_C = 200 mW.	Higher f_T supports wider bandwidth but lacks guaranteed h_FE rank; less consistent biasing.	Choose when broader frequency response is prioritized over h_FE predictability in non-critical gain paths.

Compared with 2SC2812-6-TB-E and KSC1845FTA, the 2SC2812-5-TB-E provides the tightest h_FE binning for repeatable DC bias design, lower gain variation across temperature, and proven compatibility in legacy SANYO-based audio reference designs - making it optimal for cost-sensitive, volume-manufactured linear amplifier modules where production yield and calibration effort matter.

Availability

2SC2812-5-TB-E is available at Aetrix Electronics and suitable for audio preamplifier stages, industrial sensor signal conditioning, and DC power supply error amplifier circuits requiring stable component supply, consistent h_FE performance, and TO-92–compatible packaging.

Supply support for 2SC2812-5-TB-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2011; its legacy products remain widely used in industrial and consumer electronics.

The 2SC2812 series belongs to SANYO's low-frequency general-purpose amplifier transistor family, engineered specifically for reliable linear amplification in audio, sensor interface, and power control applications where predictable h-parameter behavior and thermal stability are essential.

FAQ

What is the h_FE range for 2SC2812-5-TB-E?

The 2SC2812-5-TB-E is binned to Rank 5, with a guaranteed DC current gain (h_FE) of 135–270 measured at V_CE = 6 V and I_C = 1 mA. This tight binning ensures consistent bias point setting in production amplifier circuits without manual transistor sorting or trimming.

Is 2SC2812-5-TB-E RoHS compliant?

Yes, 2SC2812-5-TB-E complies with RoHS Directive 2011/65/EU. SANYO's datasheet EN3218B (February 2008 revision) confirms lead-free terminations and halogen-free molding compound, consistent with standard manufacturing practices for CP-packaged transistors shipped after 2006.

What is the maximum collector current for continuous operation of 2SC2812-5-TB-E?

The absolute maximum continuous collector current (I_C) for 2SC2812-5-TB-E is –150 mA at T_a = 25°C. Derating applies above 25°C: linear reduction to 100 mA at T_a = 75°C, as defined in the PC–Ta derating curve (IT12016) in the official datasheet.

Can 2SC2812-5-TB-E replace 2SC2812-6-TB-E in existing designs?

Yes, 2SC2812-5-TB-E is physically and electrically interchangeable with 2SC2812-6-TB-E - same CP package, pinout, voltage/current ratings, and thermal limits. The only difference is h_FE binning (135–270 vs. 200–400), so verify bias stability if the original design relies on minimum h_FE ≥ 200.

What is the typical output capacitance (C_ob) of 2SC2812-5-TB-E?

The typical output capacitance (C_ob) of 2SC2812-5-TB-E is 3.0 pF, measured at V_CB = –6 V and f = 1 MHz. This low value helps minimize Miller-effect phase shift in high-gain amplifier configurations, supporting stable operation up to ~10 MHz.

2SC2812-5-TB-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 150 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 135 @ 1mA, 6V

Power - Max:: 200 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-CP

2SC2812-5-TB-E FAQ

1.How can I place an order for 2SC2812-5-TB-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC2812-5-TB-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC2812-5-TB-E reliable?

The price and inventory of 2SC2812-5-TB-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC2812-5-TB-E is usually 5 days.

3.What payment methods are accepted for 2SC2812-5-TB-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC2812-5-TB-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC2812-5-TB-E?

2SC2812-5-TB-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC2812-5-TB-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC2812-5-TB-E?

For technical support, including 2SC2812-5-TB-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC2812-5-TB-E requirements.

6.How does Aetrix verify that 2SC2812-5-TB-E is sourced from the original manufacturer or authorized distributors?

All 2SC2812-5-TB-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC2812-5-TB-E meets industry standards.

7.What is the process for return or replacement of 2SC2812-5-TB-E?

All 2SC2812-5-TB-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC2812-5-TB-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC2812-5-TB-E part is unused and in its original packaging.

Return procedure for 2SC2812-5-TB-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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