onsemi 2SC2812-6-M-TB-E

Overview

2SC2812-6-M-TB-E from SANYO Semiconductor is an NPN epitaxial planar silicon transistor for low-frequency general-purpose amplifier applications, featuring V_CEO = 50 V, I_C = 150 mA, P_C = 200 mW, f_T = 100 MHz, and h_FE range of 200–400 (Rank 6). It is commonly used in audio preamplifier stages and signal conditioning circuits where moderate gain and voltage handling are required.

For engineers reviewing the 2SC2812-6-M-TB-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified h_FE binning (Rank 6), guaranteed f_T at 1 mA bias, saturation voltage under I_C/I_B = 10, Cob ≤ 4.0 pF, and CP package thermal derating per ambient temperature.

Technical Context

The 2SC2812-6-M-TB-E operates as a discrete NPN bipolar junction transistor optimized for linear amplification-not switching-within low-frequency bands (<10 MHz typical). Its h_FE binning (Rank 6: 200–400) ensures predictable DC gain stability across production lots, while its f_T = 100 MHz supports wideband small-signal integrity up to mid-VHF.

Designed with epitaxial planar construction, it delivers low output capacitance (C_ob = 3.0–4.0 pF @ V_CB = −6 V), tight V_CE(sat) (−0.15 to −0.5 V @ I_C = −50 mA, I_B = −5 mA), and robust breakdown ratings: V_(BR)CBO = −55 V, V_(BR)CEO = −50 V, V_(BR)EBO = −5 V.

Key Specifications

Pinout & Package

2SC2812-6-M-TB-E is housed in the CP (Chip Plastic) miniature surface-mount package (SOT-23 equivalent footprint), measuring 2.9 × 1.5 × 1.1 mm (L × W × H), with gull-wing leads and standard JEDEC-compliant thermal pad layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal amplifier applications.

Compared with 2SC2812-6-M-TB-E, the 2SC2712-6-TB-E offers identical mechanical fit and gain binning but reduced bandwidth, while the MMBT2222ALT1G provides higher f_T and power rating at the cost of lower breakdown voltage and non-drop-in pinout-requiring PCB revision.

Availability

2SC2812-6-M-TB-E is available at Aetrix Electronics and suitable for audio preamplifiers, sensor interface circuits, and low-frequency oscillator designs requiring stable component supply, consistent h_FE binning, and miniature surface-mount packaging.

Supply support for 2SC2812-6-M-TB-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2011; known for high-reliability consumer and industrial-grade components.

The 2SC2812 belongs to SANYO's low-frequency general-purpose amplifier transistor family, designed specifically for cost-sensitive, space-constrained linear amplification tasks in home audio, office equipment, and industrial signal conditioning systems.

FAQ

What does the "-6" suffix indicate in 2SC2812-6-M-TB-E?

The "-6" in 2SC2812-6-M-TB-E denotes the h_FE Rank 6 binning, specifying a guaranteed DC current gain range of 200–400 at V_CE = −6 V and I_C = −1 mA. This binning ensures predictable bias point behavior across production units and eliminates manual gain sorting during assembly. The 2SC2812-6-M-TB-E datasheet confirms this classification on page 1 under the h_FE table footnote.

Is 2SC2812-6-M-TB-E RoHS compliant?

Yes, 2SC2812-6-M-TB-E is RoHS compliant per SANYO's EN3218B datasheet revision and manufacturing records dated February 2008. It contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Aetrix Electronics provides full material declarations and RoHS certificates upon request for 2SC2812-6-M-TB-E orders.

Can 2SC2812-6-M-TB-E replace 2SC2812-5-M-TB-E in existing designs?

Yes-2SC2812-6-M-TB-E can directly replace 2SC2812-5-M-TB-E if the design accommodates h_FE = 200–400 instead of Rank 5 (135–270). Both share identical package, pinout, absolute maximum ratings, and electrical test conditions. No layout or bias network changes are needed, though gain-dependent stages may require verification of quiescent point stability. The 2SC2812-6-M-TB-E datasheet explicitly lists both ranks in the same h_FE classification table.

What is the maximum allowable junction temperature for 2SC2812-6-M-TB-E?

The maximum junction temperature (T_j) for 2SC2812-6-M-TB-E is 150°C, as specified in the Absolute Maximum Ratings table on page 1 of the official datasheet. Operation beyond this limit risks permanent degradation of h_FE, increased leakage, or bond wire failure. Thermal design must ensure T_j ≤ 150°C under worst-case ambient and power dissipation-using the published P_C–T_A derating curve (IT12016) for the CP package.

Does 2SC2812-6-M-TB-E support pulsed operation, and what are the limits?

Yes, 2SC2812-6-M-TB-E supports pulsed collector current up to I_CP = 300 mA, defined as peak current with duty cycle ≤ 10% and pulse width ≤ 10 ms, per the Absolute Maximum Ratings table. Pulse operation must respect the SOA boundary-especially V_CE × I_C product-and avoid secondary breakdown. The 2SC2812-6-M-TB-E datasheet specifies these limits on page 1 under "Collector Current (Pulse)".