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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC2812N6-TB-E

Name: 2SC2812N6-TB-E
Brand: onsemi
SKU: 2SC2812N6-TB-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC2812N6-TB-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2SC2812N6-TB-E.pdf

Description:: TRANS NPN 50V 0.15A 3-CP

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Product details

Overview

2SC2812N6-TB-E from onsemi is an NPN bipolar junction transistor in a CPA (SOT-23) package, rated for 50 V V_CEO, 150 mA I_C, and low 0.1 V typical V_CE(sat) at I_C = 50 mA / I_B = 5 mA. It delivers 100 MHz f_T, h_FE of 200–400 (Rank 6), and 200 mW P_C, suited for compact DC/DC converter switching and low-power linear amplification stages.

For engineers reviewing the 2SC2812N6-TB-E datasheet, pinout, applications, or equivalent options, key selection criteria include its low saturation voltage, SOT-23 footprint compatibility, guaranteed h_FE binning, thermal performance on FR-4, and Pb-free tape-and-reel packaging (3,000 pcs/reel).

Technical Context

The 2SC2812N6-TB-E operates as a general-purpose NPN switch with fast turn-on/turn-off enabled by its 100 MHz f_T and low output capacitance (C_ob = 3.0 pF at V_CB = –6 V). Its V_CE(sat) ≤ 0.5 V ensures minimal conduction loss in low-voltage logic-level drive circuits.

Designed for ambient temperatures from –55°C to +150°C, it maintains stable h_FE across temperature (25°C, –25°C, +75°C curves shown), and supports pulsed operation up to I_CP = 300 mA with 100 μs pulse width - critical for transient load switching in portable power management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum safe collector-emitter blocking voltage under open-base conditions
I_C	150 mA continuous - Supports medium-current switching in battery-powered sensor nodes
V_CE(sat)	0.1 V (typ), ≤0.5 V (max) at I_C=50 mA/I_B=5 mA - Enables <100 mW dissipation in saturated switch mode
f_T	100 MHz - Sufficient for audio-frequency amplification and sub-MHz PWM control loops
h_FE	200–400 (Rank 6) at V_CE=6 V, I_C=1 mA - Tight DC gain binning simplifies bias design in analog front-ends
P_C	200 mW - Requires no heatsink on standard 20×30×1.6 mm glass epoxy PCB
C_ob	3.0 pF at V_CB=–6 V - Limits high-frequency Miller feedback in switching applications

Pinout & Package

Package: CPA (JEITA SC-59 / JEDEC TO-236AB / industry-standard SOT-23), 3-pin surface-mount, 0.013 g mass, Pb-free, tape-and-reel (TB) packing.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring ~5 mA base drive for full saturation at 50 mA collector current
2	Emitter	Common reference node; tied to ground or low-side return path in switch configurations
3	Collector	Output terminal handling up to 50 V and 150 mA; connects to load or pull-up network

Key Features

Feature	Design Value
Low V_CE(sat)	0.1 V typical enables >95% efficiency in 3.3 V or 5 V rail-switching applications
Guaranteed h_FE binning	Rank 6 (200–400) eliminates gain variation testing in production calibration
SOT-23 footprint	Standardized 2.93 × 1.9 mm outline allows drop-in replacement in legacy designs
Pb-free & RoHS-compliant	TB reel packaging meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1)

Applications

LED Driver Circuit	Low-Voltage Logic Interface
Use Scenario: Driving 20 mA white LEDs from 3.3 V microcontroller GPIO pins in wearable devices. IC Role / Device Role / Timing Role: NPN switch providing current gain and level translation between MCU output and LED anode. Use Value: V_CE(sat) ≤ 0.5 V ensures ≥3.0 V forward bias across LED, sustaining brightness without external driver IC.	Use Scenario: Converting 1.8 V CMOS logic outputs to 5 V TTL-compatible signals in mixed-voltage industrial I/O modules. IC Role / Device Role / Timing Role: Single-transistor level shifter with fixed base resistor network. Use Value: 100 MHz f_T supports clean edge transitions up to 10 MHz, minimizing setup/hold timing violations.
DC/DC Converter Switch	Current-Sense Amplifier Bias Stage
Use Scenario: Low-side switching element in 500 kHz buck converter for USB-C PD auxiliary power rails. IC Role / Device Role / Timing Role: Fast-turning NPN switch controlling energy transfer into output inductor. Use Value: 3.0 pF C_ob reduces switching losses and EMI generation during 500 kHz transitions.	Use Scenario: Providing stable bias current to precision op-amp input stage in 4–20 mA transmitter circuits. IC Role / Device Role / Timing Role: Constant-current source using emitter-degenerated configuration. Use Value: Tight h_FE binning (200–400) ensures ±2% bias current accuracy across temperature and unit variance.

LED Driver Circuit

Low-Voltage Logic Interface

Use Scenario: Driving 20 mA white LEDs from 3.3 V microcontroller GPIO pins in wearable devices.

IC Role / Device Role / Timing Role: NPN switch providing current gain and level translation between MCU output and LED anode.

Use Value: V_CE(sat) ≤ 0.5 V ensures ≥3.0 V forward bias across LED, sustaining brightness without external driver IC.

Use Scenario: Converting 1.8 V CMOS logic outputs to 5 V TTL-compatible signals in mixed-voltage industrial I/O modules.

IC Role / Device Role / Timing Role: Single-transistor level shifter with fixed base resistor network.

Use Value: 100 MHz f_T supports clean edge transitions up to 10 MHz, minimizing setup/hold timing violations.

DC/DC Converter Switch

Current-Sense Amplifier Bias Stage

Use Scenario: Low-side switching element in 500 kHz buck converter for USB-C PD auxiliary power rails.

IC Role / Device Role / Timing Role: Fast-turning NPN switch controlling energy transfer into output inductor.

Use Value: 3.0 pF C_ob reduces switching losses and EMI generation during 500 kHz transitions.

Use Scenario: Providing stable bias current to precision op-amp input stage in 4–20 mA transmitter circuits.

IC Role / Device Role / Timing Role: Constant-current source using emitter-degenerated configuration.

Use Value: Tight h_FE binning (200–400) ensures ±2% bias current accuracy across temperature and unit variance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT2222ALT1G	V_CEO = 40 V (lower), h_FE = 100–300 (wider spread), V_CE(sat) = 0.3 V (higher)	Less suitable for 50 V bus switching; acceptable for 3.3 V logic interface where gain tolerance is relaxed	Select when cost priority outweighs V_CEO margin and saturation loss
BC846BW	f_T = 100 MHz (same), but V_CEO = 65 V and V_CE(sat) = 0.25 V (higher); h_FE = 110–220 (narrower bin)	Better voltage headroom for 48 V systems; higher V_CE(sat) increases conduction loss in low-V_CC apps	Prefer for industrial 24–48 V signal conditioning where robustness > efficiency

Compared with MMBT2222ALT1G and BC846BW, the 2SC2812N6-TB-E uniquely balances 50 V rating, ultra-low 0.1 V typical V_CE(sat), and tight h_FE binning - making it optimal for space-constrained, battery-sensitive designs demanding predictable gain and minimal heat rise.

Availability

2SC2812N6-TB-E is available at Aetrix Electronics and suitable for LED driver circuits, low-voltage logic interfaces, and DC/DC converter switches requiring stable component supply, consistent parametric binning, and RoHS-compliant SOT-23 packaging.

Supply support for 2SC2812N6-TB-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SC2812N6-TB-E belongs to onsemi's general-purpose bipolar transistor product line, engineered for miniaturized, high-reliability discrete switching and amplification in portable and space-constrained electronics.

FAQ

What is the maximum continuous collector current rating for the 2SC2812N6-TB-E?

The 2SC2812N6-TB-E has a maximum continuous collector current (I_C) rating of 150 mA at T_a = 25°C. This rating assumes operation within the recommended ambient temperature range and proper PCB thermal relief. At elevated temperatures or with reduced copper area, derating per the PC–Ta curve (Fig. No.7198-5/7) applies - e.g., ~100 mA at 75°C on a standard 20×30×1.6 mm board.

Does the 2SC2812N6-TB-E have a guaranteed h_FE range, and how is it marked?

Yes, the 2SC2812N6-TB-E is binned to Rank 6, guaranteeing h_FE = 200–400 at V_CE = 6 V and I_C = 1 mA. This rank is indicated by the "6" in the part number suffix and confirmed in the Electrical Characteristics table. The device marking on the CPA package reads "2SC2812N" followed by lot code; no separate h_FE code is laser-marked.

What is the pin configuration of the 2SC2812N6-TB-E in the CPA package?

The 2SC2812N6-TB-E uses the standard SOT-23 pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This matches JEDEC TO-236AB and JEITA SC-59 outlines. The package drawing (No.7198-6/7) confirms the 2.93 mm × 1.9 mm body with 0.95 mm lead pitch, and the land pattern example shows 1.3 mm pad length for reliable reflow soldering.

Is the 2SC2812N6-TB-E suitable for high-frequency switching above 10 MHz?

The 2SC2812N6-TB-E has a gain-bandwidth product (f_T) of 100 MHz, making it suitable for switching up to ~10–20 MHz with acceptable gain margin. However, its Cob = 3.0 pF and V_CE(sat) optimization prioritize low-frequency efficiency over RF performance. For >50 MHz operation, dedicated RF transistors like the MMBT918LT1G are recommended instead.

What does the "TB" suffix indicate in 2SC2812N6-TB-E?

The "TB" suffix denotes embossed tape-and-reel packaging per JIS C 0806, with 3,000 units per reel. It specifies the carrier tape type (embossed), orientation (component cavity depth and cover tape seal), and compliance with moisture sensitivity level 1 (MSL-1). "TB" is distinct from "CPA-TB-E", which redundantly states both package (CPA) and packing (TB); both variants share identical electrical and mechanical specs.

2SC2812N6-TB-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 150 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 135 @ 1mA, 6V

Power - Max:: 200 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-CP

2SC2812N6-TB-E FAQ

1.How can I place an order for 2SC2812N6-TB-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC2812N6-TB-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC2812N6-TB-E reliable?

The price and inventory of 2SC2812N6-TB-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC2812N6-TB-E is usually 5 days.

3.What payment methods are accepted for 2SC2812N6-TB-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC2812N6-TB-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC2812N6-TB-E?

2SC2812N6-TB-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC2812N6-TB-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC2812N6-TB-E?

For technical support, including 2SC2812N6-TB-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC2812N6-TB-E requirements.

6.How does Aetrix verify that 2SC2812N6-TB-E is sourced from the original manufacturer or authorized distributors?

All 2SC2812N6-TB-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC2812N6-TB-E meets industry standards.

7.What is the process for return or replacement of 2SC2812N6-TB-E?

All 2SC2812N6-TB-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC2812N6-TB-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC2812N6-TB-E part is unused and in its original packaging.

Return procedure for 2SC2812N6-TB-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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