onsemi 2SC3143-5-TB-E

Overview

2SC3143-5-TB-E from SANYO is an NPN epitaxial planar silicon transistor designed for high-voltage switching and AF power amplification, with V_CEO = −160 V, I_C = −8 A, P_C = 200 W, and f_T = 110 MHz at V_CE = −10 V, I_C = −10 mA. It serves as a predriver in 100W audio amplifier output stages and high-side switching circuits requiring robust breakdown margin and fast switching.

For engineers reviewing the 2SC3143-5-TB-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO ≥ 160 V, h_FE rank 5 (270–530 @ I_C = −10 mA), low C_ob = 2.2 pF @ V_CB = −10 V, and TO-3PB package thermal performance under continuous conduction.

Technical Context

This device operates as a linear or switching NPN transistor with fixed emitter-base junction geometry optimized for high-voltage gain stability. Its f_T of 110 MHz and low output capacitance (C_ob = 2.2 pF) support wideband audio driver and RF buffer roles up to 30 MHz.

The 2SC3143-5-TB-E exhibits V_CE(sat) = −0.7 V @ I_C = −3 A, I_B = −300 mA and V_BE(sat) = −1.0 V @ same conditions, confirming strong current drive capability in Class AB output stages. Thermal resistance R_th(j-c) is 0.5°C/W, enabling direct heatsink mounting in high-power analog designs.

Key Specifications

Pinout & Package

2SC3143-5-TB-E uses the TO-3PB (CP) metal-can package with integral mounting flange, rated for junction-to-case thermal resistance of 0.5°C/W. The package supports direct mechanical attachment to heatsinks without insulating washers when used with appropriate torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with 2SC3144-5-TB-E and MJE13009G, the 2SC3143-5-TB-E offers optimal balance of high-voltage tolerance, wide bandwidth, and moderate gain for linear audio and medium-frequency switching-making it irreplaceable in designs relying on its specific h_FE bin and f_T/C_ob trade-off.

Availability

2SC3143-5-TB-E is available at Aetrix Electronics and suitable for high-voltage audio amplifiers, industrial motor controllers, RF buffer stages, and linear power supply regulators requiring stable component supply and long-term obsolescence management.

Supply support for 2SC3143-5-TB-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in high-reliability discrete power devices and analog ICs before its acquisition by Panasonic in 2012. Its transistor division emphasized ruggedized, thermally optimized silicon for industrial and audio applications.

The 2SC3143-5-TB-E belongs to SANYO's CP-series high-voltage NPN transistor family, engineered specifically for audio output predrivers and industrial switching where simultaneous high V_CEO, high I_C, and wide f_T were essential design requirements.

FAQ

What is the maximum collector-emitter voltage rating for the 2SC3143-5-TB-E?

The 2SC3143-5-TB-E has a guaranteed V_CEO rating of −160 V at T_a = 25°C. This value is confirmed in the Absolute Maximum Ratings table and applies under pulsed and DC conditions. Exceeding this voltage risks avalanche breakdown and permanent device failure, especially under elevated temperature or high dv/dt transients.

How does the h_FE rank "5" affect biasing in amplifier circuits using the 2SC3143-5-TB-E?

The "5" in 2SC3143-5-TB-E denotes h_FE binning: DC current gain ranges from 270 to 530 at I_C = −10 mA and V_CE = −5 V. This tight specification allows predictable quiescent current setting in Class AB output stages without per-unit adjustment, reducing manufacturing variance in high-fidelity audio amplifiers.

Can the 2SC3143-5-TB-E be used in place of the 2SC3144-5-TB-E?

No-the 2SC3143-5-TB-E and 2SC3144-5-TB-E are not interchangeable without circuit review. While both share identical package, voltage, and current ratings, the 2SC3144-5-TB-E has higher h_FE (350–700), which alters base drive requirements and may cause thermal runaway or distortion if substituted directly into a design calibrated for 2SC3143-5-TB-E's gain range.

What is the thermal resistance from junction to case for the 2SC3143-5-TB-E?

The 2SC3143-5-TB-E has a specified junction-to-case thermal resistance (R_th(j-c)) of 0.5°C/W. This value is derived from the package construction (TO-3PB/CP) and validated via thermal testing per JESD51 standards. It enables accurate heatsink sizing when dissipating up to 200 W at T_c ≤ 25°C.

Does the 2SC3143-5-TB-E require a heatsink in typical audio amplifier applications?

Yes-any application where the 2SC3143-5-TB-E dissipates more than ~10 W continuously requires a heatsink. In a 100W audio amplifier predriver stage, typical dissipation exceeds 30 W during dynamic peaks; the TO-3PB package's 0.5°C/W R_th(j-c) mandates a heatsink with ≤ 1.5°C/W total thermal resistance to maintain T_j < 125°C.