onsemi 2SC3151M

Overview

2SC3151M from SANYO is an NPN triple diffused planar silicon transistor designed for high-voltage switching regulator applications, featuring V_CBO ≥ 900 V, I_C = 1.5 A (DC), P_C = 60 W at T_c = 25°C, and f_T = 15 MHz - deployed in offline AC/DC power supplies and flyback converters.

For engineers reviewing the 2SC3151M datasheet, pinout, applications, or equivalent options, key selection considerations include breakdown voltage margin (900 V V_CBO), safe operating area under pulse conditions, saturation voltage at I_C/I_B = 5, thermal derating above 25°C, and TO-3PB package mechanical compatibility.

Technical Context

This device uses triple diffusion planar construction to achieve high breakdown voltage and wide active safe operating area (ASO) under both forward and reverse bias conditions. Its high-speed switching capability (t_on = 0.1 µs, t_f = 0.7 µs at I_C = 1 A) supports efficient operation in 20–100 kHz switching regulators.

It operates with a DC current gain h_FE1 of 10–40 at V_CE = 5 V, I_C = 0.1 A, and h_FE2 of 15–60 at V_CE = 5 V, I_C = 0.5 A - enabling stable base drive design across load ranges without requiring complex compensation.

Key Specifications

Pinout & Package

SANYO TO-3PB metal package: isolated collector tab, screw-mount compatible, 20.0 mm × 15.0 mm footprint, 4.8 mm height, with integral heat sink interface. Pin 1 = Base, Pin 2 = Collector (tab), Pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching transistor applications.

Compared with 2SC3151M, the standard 2SC3151 offers lower cost but reduced h_FE consistency, while 2SC3152M delivers higher voltage headroom at identical thermal and mechanical compatibility - making it suitable for next-generation designs demanding stricter surge immunity.

Availability

2SC3151M is available at Aetrix Electronics and suitable for AC/DC offline adapters, flyback power supplies, and LED driver circuits requiring stable component supply, long-term obsolescence management, and traceable sourcing from original SANYO production lots.

Supply support for 2SC3151M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012; known for rugged high-voltage transistor technologies.

The 2SC3151M belongs to SANYO's high-voltage switching transistor family developed specifically for offline SMPS applications requiring breakdown voltage >800 V and robust ASO performance under pulse loading.

FAQ

What is the maximum continuous collector current rating for the 2SC3151M?

The 2SC3151M has a maximum continuous collector current I_C of 1.5 A at case temperature T_c = 25°C. This rating decreases with rising case temperature - for example, it drops to approximately 0.9 A at T_c = 100°C - and must be applied with appropriate heatsinking to maintain junction temperature below 150°C. The 2SC3151M datasheet specifies this derating curve in Figure ITR05417.

Does the 2SC3151M have a specified h_FE range, and how is it marked?

Yes, the 2SC3151M is h_FE1-ranked with a guaranteed range of 20–40 at V_CE = 5 V and I_C = 0.1 A, indicated by the "M" suffix in the part number. This ranking ensures consistent base drive requirements across production lots, unlike the unranked 2SC3151. The 2SC3151M marking appears on the device surface alongside the SANYO logo and ordering number ENN1070C.

Can the 2SC3151M be used in avalanche mode?

No, the 2SC3151M is not rated or characterized for repetitive avalanche operation. Its Absolute Maximum Ratings specify only single-pulse SOA limits, and the datasheet does not define avalanche energy (E_AS) or ruggedness test conditions. For applications requiring controlled avalanche behavior, a dedicated avalanche-rated transistor such as the 2SC3152M should be evaluated instead of the 2SC3151M.

What is the thermal resistance from junction to case (R_θJC) for the 2SC3151M?

The 2SC3151M has a typical junction-to-case thermal resistance R_θJC of 1.5°C/W, derived from its 60 W power dissipation rating at T_c = 25°C and T_j = 150°C (ΔT = 125°C). This value assumes full contact between the TO-3PB collector tab and a flat, smooth, thermally greased heatsink surface - actual system-level R_θJA depends on heatsink size, airflow, and mounting quality.

Is the 2SC3151M RoHS compliant?

The 2SC3151M was manufactured prior to RoHS Directive enforcement (pre-2006) and does not carry RoHS certification. It contains lead in the solder die attach and lead frame plating, consistent with SANYO's specifications in PS No.1070–4/4 dated May 2004. For RoHS-compliant alternatives, consider modern equivalents such as the ON Semiconductor MJD122G or STMicroelectronics BU508A, which require redesign verification for voltage and SOA equivalence to the 2SC3151M.