Toshiba Semiconductor and Storage 2SC3325-O(TE85L,F)

Overview

2SC3325-O(TE85L,F) from Toshiba is a silicon NPN epitaxial transistor using PCT process, designed for audio frequency low-power amplification, driver-stage amplification, and switching applications. It delivers hFE ≥25 at V_CE = 6 V / I_C = 400 mA, V_CEO = 50 V (min), and f_T = 300 MHz (typ.), housed in a TO-236MOD (SC-59) package.

For engineers reviewing the 2SC3325-O(TE85L,F) datasheet, 2SC3325-O(TE85L,F) pinout, 2SC3325-O(TE85L,F) application, or 2SC3325-O(TE85L,F) equivalent, key selection criteria include DC current gain linearity at high I_C, V_CEO rating for 24–48 V rail compatibility, thermal derating behavior up to 150°C junction temperature, and SC-59 footprint constraints in space-constrained analog stages.

Technical Context

This transistor employs a planar epitaxial structure with PCT (Precise Control Technology) processing to ensure stable hFE linearity across collector current-critical for low-distortion audio preamplifier and driver stages. Its 300 MHz f_T supports wideband small-signal amplification up to ~100 MHz while maintaining robust saturation performance (V_CE(sat) ≤ 0.25 V at I_C/I_B = 100 mA/10 mA).

The device operates within a −55°C to +150°C storage/junction range and is rated for 200 mW collector power dissipation at T_a = 25°C, requiring thermal design consideration for continuous I_C > 200 mA. It is explicitly designated as complementary to 2SA1313 (PNP counterpart), enabling matched-pair push-pull configurations.

Key Specifications

Pinout & Package

Package: TO-236MOD (JEDEC), identical to SC-59 (JEITA) and Toshiba's 2-3F1A outline; surface-mount, 3-terminal plastic package weighing 0.012 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with BC847B,215 and MMBT3904LT1G, the 2SC3325-O(TE85L,F) provides superior hFE linearity at high collector current and higher V_CEO margin-making it preferred for audio driver and 24–48 V switching where gain consistency and voltage headroom are critical.

Availability

2SC3325-O(TE85L,F) is available at Aetrix Electronics and suitable for audio preamplifier stages, low-voltage switching drivers, and complementary push-pull output circuits requiring stable component supply and long-term industrial availability.

Supply support for 2SC3325-O(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete devices, power electronics, and analog ICs for industrial, automotive, and consumer applications.

The 2SC3325-O(TE85L,F) belongs to Toshiba's legacy general-purpose bipolar transistor family, engineered for reliability in analog signal conditioning and medium-speed switching where gain linearity and voltage robustness are prioritized over ultra-high speed or ultra-low power.

FAQ

What is the hFE classification for 2SC3325-O(TE85L,F)?

The "O" suffix in 2SC3325-O(TE85L,F) denotes the hFE (2) classification: minimum DC current gain of 25 at V_CE = 6 V and I_C = 400 mA. This grade ensures predictable performance in high-current driver applications where gain stability matters more than maximum hFE value. The 2SC3325-O(TE85L,F) also meets hFE (1) range of 70–140 at V_CE = 1 V, I_C = 100 mA.

Is 2SC3325-O(TE85L,F) RoHS compliant?

Yes, 2SC3325-O(TE85L,F) complies with EU RoHS Directive requirements. Toshiba confirms lead-free termination and halogen-free molding compound for this part, consistent with its production start date (1982) and subsequent environmental upgrades. Full compliance documentation, including test reports, is available upon request for 2SC3325-O(TE85L,F) through Aetrix Electronics' technical support team.

Can 2SC3325-O(TE85L,F) replace 2SC3325-Y(TE85L,F) in existing designs?

No direct substitution is recommended without circuit validation. While both share the same package and absolute ratings, 2SC3325-O(TE85L,F) guarantees hFE ≥25 at high current, whereas 2SC3325-Y(TE85L,F) guarantees hFE ≥40 under identical conditions. Lower hFE may increase base drive requirements or reduce loop gain in feedback amplifiers-verify stability and bias margins before substituting 2SC3325-O(TE85L,F) for Y-grade in production.

What is the maximum safe operating collector current for 2SC3325-O(TE85L,F)?

The absolute maximum collector current for 2SC3325-O(TE85L,F) is 500 mA, but practical continuous operation should remain ≤200 mA at T_a = 25°C due to its 200 mW power dissipation limit. At I_C = 400 mA, V_CE must stay ≤0.5 V to avoid exceeding P_C; derating is required above 25°C ambient per Toshiba's thermal guidelines. Always consult the 2SC3325-O(TE85L,F) thermal resistance data for PCB-specific layout rules.

Does 2SC3325-O(TE85L,F) have a documented complementary PNP part?

Yes, Toshiba explicitly lists 2SA1313 as the complementary PNP counterpart to 2SC3325-O(TE85L,F). Both share matching hFE grading (O/Y), comparable V_CEO/V_ECO, and identical TO-236MOD packaging-enabling thermally coupled, matched-pair implementation in Class-AB output stages. This pairing is confirmed in Toshiba's original 2SC3325 datasheet revision 2014-03-01 and cross-reference tables.