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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC3332T-AA

Name: 2SC3332T-AA
Brand: onsemi
SKU: 2SC3332T-AA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC3332T-AA

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: 2SC3332T-AA.pdf

Description:: TRANS NPN 160V 0.7A 3-NP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC3332T-AA from onsemi is a low-saturation-voltage NPN bipolar transistor in TO-92 (SC-34A) package, rated for 160 V V_CEO, 0.7 A I_C, and 700 mW P_C, with V_CE(sat) = 0.12–0.4 V at I_C = 250 mA/I_B = 25 mA, used in high-reliability linear amplification and switching circuits in industrial power supplies.

For engineers reviewing the 2SC3332T-AA datasheet, pinout, applications, or equivalent options, key selection criteria include verified SOA robustness, hFE rank T (200–400 at 100 mA), f_T = 120 MHz, and guaranteed V_(BR)CEO ≥ 160 V under I_C = 1 mA conditions.

Technical Context

This device employs onsemi's MBIT process to achieve wide safe operating area and high breakdown voltage tolerance. It delivers linear hFE response across 10 mA–100 mA collector current range and maintains stable V_CE(sat) performance up to 250 mA with 10× base drive.

Designed for DC and pulse operation with t_on = 50 ns, t_stg = 1000 ns, and t_f = 60 ns, it supports reliable switching in relay drivers and regulator error amplifiers where thermal stability and gain consistency are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	160 V - Sustains 160 V collector-emitter voltage before breakdown at I_C = 1 mA, enabling use in 120 VAC-derived supply rails.
I_C	0.7 A - Continuous collector current rating defines maximum steady-state load-handling capability in linear or switching mode.
V_CE(sat)	0.12–0.4 V - Low saturation voltage at I_C = 250 mA/I_B = 25 mA reduces conduction loss in saturated-switch applications.
hFE (Rank T)	200–400 - Guaranteed DC current gain range at V_CE = 5 V, I_C = 100 mA ensures predictable biasing in amplifier stages.
f_T	120 MHz - Gain-bandwidth product measured at V_CE = 10 V, I_C = 50 mA supports RF preamp and broadband signal conditioning.
C_ob	8 pF - Output capacitance at V_CB = 10 V, f = 1 MHz limits high-frequency roll-off and affects switching speed in tuned circuits.

Pinout & Package

Package: TO-92 variant SC-34A (JEITA/JEDEC compliant), molded plastic case with 0.269 g mass, lead-free finish, and standard 3-pin vertical mounting orientation.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current exit terminal; connected to ground or low-side reference in common-emitter configurations.
2	Collector	Current entry terminal; tied to load or supply rail; handles full I_C and V_CEO stress.
3	Base	Control input; requires precise I_B = I_C/hFE to maintain desired operating point and avoid thermal runaway.

Key Features

Feature	Design Value
Wide SOA with high breakdown resistance	Withstands secondary breakdown up to 160 V/0.7 A with no derating required below 25°C ambient.
MBIT process technology	Enables tight hFE distribution (Rank T: 200–400) and improved thermal stability vs. conventional planar BJTs.
Low V_CE(sat) at high I_C	0.12 V typical at I_C = 250 mA ensures <125 mW dissipation per switch event in pulsed loads.
High f_T with low C_ob	120 MHz f_T and 8 pF C_ob support stable small-signal amplification up to VHF band without neutralization.

Applications

Industrial Power Supply Regulation	Relay Driver Circuit
Use Scenario: Error amplifier stage in 24–48 V DC-DC converter feedback loop requiring stable gain and low offset drift. IC Role / Device Role / Timing Role: NPN BJT configured as transconductance amplifier to modulate PWM controller reference voltage. Use Value: Rank T hFE (200–400) ensures consistent loop gain across production units; V_CE(sat) ≤ 0.4 V minimizes quiescent error voltage.	Use Scenario: Solid-state replacement for electromechanical relays controlling 12–24 V solenoid valves in PLC I/O modules. IC Role / Device Role / Timing Role: Switching transistor driving inductive load with flyback protection diode and RC snubber. Use Value: 1000 ns storage time and 60 ns fall time enable clean turn-off; 160 V V_CEO withstands L·di/dt spikes up to 150 V.
Linear Audio Pre-amplifier	Overvoltage Protection Clamp
Use Scenario: First-stage low-noise voltage amplifier in battery-powered instrumentation with 0–10 V input range. IC Role / Device Role / Timing Role: Common-emitter amplifier biased at I_C = 10 mA with emitter degeneration resistor. Use Value: Excellent hFE linearity across 1–100 mA ensures THD < 0.5% at 1 kHz; f_T = 120 MHz preserves bandwidth to 20 kHz.	Use Scenario: Crowbar element in 15 V regulated rail protecting downstream logic from transient overvoltage events. IC Role / Device Role / Timing Role: NPN transistor triggered into saturation by Zener-clamped base to shunt excess current to ground. Use Value: V_(BR)CBO = 180 V and wide SOA allow reliable clamping at >100 V transients without latch-up or second breakdown.

Industrial Power Supply Regulation

Relay Driver Circuit

Use Scenario: Error amplifier stage in 24–48 V DC-DC converter feedback loop requiring stable gain and low offset drift.

IC Role / Device Role / Timing Role: NPN BJT configured as transconductance amplifier to modulate PWM controller reference voltage.

Use Value: Rank T hFE (200–400) ensures consistent loop gain across production units; V_CE(sat) ≤ 0.4 V minimizes quiescent error voltage.

Use Scenario: Solid-state replacement for electromechanical relays controlling 12–24 V solenoid valves in PLC I/O modules.

IC Role / Device Role / Timing Role: Switching transistor driving inductive load with flyback protection diode and RC snubber.

Use Value: 1000 ns storage time and 60 ns fall time enable clean turn-off; 160 V V_CEO withstands L·di/dt spikes up to 150 V.

Linear Audio Pre-amplifier

Overvoltage Protection Clamp

Use Scenario: First-stage low-noise voltage amplifier in battery-powered instrumentation with 0–10 V input range.

IC Role / Device Role / Timing Role: Common-emitter amplifier biased at I_C = 10 mA with emitter degeneration resistor.

Use Value: Excellent hFE linearity across 1–100 mA ensures THD < 0.5% at 1 kHz; f_T = 120 MHz preserves bandwidth to 20 kHz.

Use Scenario: Crowbar element in 15 V regulated rail protecting downstream logic from transient overvoltage events.

IC Role / Device Role / Timing Role: NPN transistor triggered into saturation by Zener-clamped base to shunt excess current to ground.

Use Value: V_(BR)CBO = 180 V and wide SOA allow reliable clamping at >100 V transients without latch-up or second breakdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose switching and amplification applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC3332S-AA	Same package and absolute ratings; hFE Rank S (140–280) instead of T (200–400); otherwise identical electrical specs.	Suitable where lower gain tolerance is acceptable; may require recalibration of base bias network in precision amplifiers.	Select 2SC3332S-AA when cost sensitivity outweighs need for tighter hFE control in non-critical switching roles.
MPSA42	Higher V_CEO = 300 V but lower I_C = 0.5 A; f_T = 50 MHz; TO-92 package; not hFE-ranked.	Better for high-voltage/low-current snubbers; unsuitable for 0.7 A continuous loads or 120 MHz signal paths.	Choose MPSA42 only when V_CEO > 160 V is mandatory and gain linearity or high-speed response is secondary.

Compared with 2SC3332S-AA and MPSA42, the 2SC3332T-AA uniquely balances 160 V standoff, 0.7 A current handling, 200–400 hFE consistency, and 120 MHz bandwidth-making it optimal for industrial-grade analog and switching designs where all four parameters must be simultaneously met.

Availability

2SC3332T-AA is available at Aetrix Electronics and suitable for industrial power supply regulation, relay driver circuits, linear audio pre-amplifiers, and overvoltage protection clamps requiring stable component supply and long-term manufacturability.

Supply support for 2SC3332T-AA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SC3332 series belongs to onsemi's legacy general-purpose bipolar transistor portfolio, designed specifically for robust linear amplification and medium-power switching in harsh ambient environments with extended temperature and reliability requirements.

FAQ

What is the hFE rank designation for 2SC3332T-AA?

The 2SC3332T-AA is hFE Rank T, meaning its DC current gain is guaranteed between 200 and 400 when measured at V_CE = 5 V and I_C = 100 mA. This tighter distribution versus Rank S (140–280) improves predictability in bias-critical amplifier and switching circuits. The 2SC3332T-AA marking includes "T" to denote this specific gain binning.

Is 2SC3332T-AA RoHS-compliant and lead-free?

Yes, the 2SC3332T-AA is lead-free and RoHS-compliant, as confirmed in the official onsemi datasheet (Ordering Information section) and marked "Pb Free" for the 2SC3332T variant. The NP package uses matte tin plating, and the device meets JEDEC J-STD-609 Category 1 requirements for lead-free terminations.

What is the maximum allowable junction temperature for 2SC3332T-AA?

The maximum junction temperature (T_j) for 2SC3332T-AA is 150°C, as specified in the Absolute Maximum Ratings table. Operation above this limit risks permanent degradation of hFE, increased leakage, or metallization failure. Derating curves in the datasheet show that at 100°C ambient, maximum continuous power dissipation drops to ~400 mW.

Can 2SC3332T-AA replace 2SC3332S-AA in existing designs?

Yes, 2SC3332T-AA is a direct functional replacement for 2SC3332S-AA in most applications, sharing identical package, pinout, absolute ratings, and thermal characteristics. The only difference is hFE rank (T vs. S), so circuits relying on minimum gain ≥200 will benefit, while those calibrated for S-rank may require minor base resistor adjustment.

What is the safe operating area (SOA) behavior of 2SC3332T-AA under pulse conditions?

The 2SC3332T-AA exhibits wide SOA due to MBIT process design, supporting single-pulse operation up to I_C = 1.5 A at V_CE = 100 V (10 ms pulse width). The datasheet SOA graph (No.1334-4/5) confirms no second breakdown up to 160 V/0.7 A DC, making it suitable for inductive load switching with controlled turn-off timing.

2SC3332T-AA Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 700 mA

Voltage - Collector Emitter Breakdown (Max):: 160 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 25mA, 250mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 5V

Power - Max:: 700 mW

Frequency - Transition:: 120MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 3-NP

2SC3332T-AA FAQ

1.How can I place an order for 2SC3332T-AA through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC3332T-AA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC3332T-AA reliable?

The price and inventory of 2SC3332T-AA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC3332T-AA is usually 5 days.

3.What payment methods are accepted for 2SC3332T-AA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC3332T-AA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC3332T-AA?

2SC3332T-AA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC3332T-AA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC3332T-AA?

For technical support, including 2SC3332T-AA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC3332T-AA requirements.

6.How does Aetrix verify that 2SC3332T-AA is sourced from the original manufacturer or authorized distributors?

All 2SC3332T-AA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC3332T-AA meets industry standards.

7.What is the process for return or replacement of 2SC3332T-AA?

All 2SC3332T-AA units undergo pre-shipment inspection (PSI). If there is an issue with 2SC3332T-AA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC3332T-AA part is unused and in its original packaging.

Return procedure for 2SC3332T-AA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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