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onsemi 2SC3383S-AA

Part No.:
2SC3383S-AA
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
-
Datasheet:
Aetrix2SC3383S-AA.pdf
Description:
BIP NPN 0.2A 50V
Quantity:
Payment:
Payment
Shipping:
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Inventory:72,000

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Product details

Overview

2SC3383S-AA from SANYO Semiconductor is an NPN epitaxial planar silicon transistor designed for low-noise audio frequency amplification, featuring fT = 250 MHz, VCEO = 50 V, IC = 200 mA, PC = 400 mW, and noise figure as low as 0.5 dB at 1 kHz - deployed in high-fidelity preamplifier stages and RF front-end gain blocks.

For engineers reviewing the 2SC3383S-AA datasheet, pinout, applications, or equivalent options, key selection criteria include verified low-noise performance (VNO(peak) ≤ 280 mV), hFE rank classification (S-grade: 140–280 @ IC = 1 mA), Cob = 2.7 pF, VCE(sat) = 0.3 V, and FBET process compatibility with discrete analog signal chains.

Technical Context

The 2SC3383S-AA employs SANYO's FBET (Flat Base Epitaxial Transistor) process to achieve tight hFE distribution and reduced base resistance, enabling stable low-noise operation across temperature ranges from −40°C to +120°C. Its fT of 250 MHz supports wideband AF and narrowband RF amplification up to ~100 MHz.

Electrical behavior is characterized under VCE = 6 V bias, with noise performance specified using Rg = 56 kΩ and VG = 77 dB at 1 kHz; VBE(sat) = −1.0 V and VCE(sat) = −0.3 V are measured at IC = 100 mA / IB = 10 mA - confirming suitability for Class-A linear amplification with minimal distortion.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 50 V - supports rail voltages up to ±30 V in dual-supply audio preamps without breakdown risk
fT 250 MHz - enables stable gain in VHF-band IF amplifiers and wideband microphone preamp designs
Cob 2.7 pF - minimizes Miller effect in common-emitter configurations, preserving bandwidth stability
VNO(peak) 280 mV - measured at 1 kHz, 56 kΩ source impedance; ensures <1 dB NF in low-level signal amplification
hFE (S grade) 140–280 @ IC = 1 mA - tight DC current gain binning improves matching in differential pair implementations
PC 400 mW - allows continuous Class-A operation at IC ≈ 10 mA with VCE ≈ 30 V in TO-92 packages
VCE(sat) 0.3 V - reduces power loss and thermal rise in emitter-follower buffer stages

Pinout & Package

2SC3383S-AA is housed in a standard TO-92 plastic package (SANYO NP outline), with lead-to-lead dimensions of 4.0 mm × 5.0 mm × 4.0 mm and 1.3 mm lead pitch. Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base - confirmed per SANYO No.1942 datasheet mechanical drawing 7522-002.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) Current sink terminal for NPN operation Low-impedance output node in common-base configuration; connects to ground or emitter degeneration resistor
2 (Collector) High-impedance output node Primary gain node in common-emitter stage; requires decoupling and load resistor or active load
3 (Base) Control input for minority-carrier injection Driven via bias network or transformer-coupled signal; sensitive to ESD due to thin base oxide in FBET process

Key Features

Feature Design Value
FBET process technology Reduces base spreading resistance and improves hFE consistency across production lots
Low-noise amplifier optimization VNO(ave) = 40 mV and VNO(peak) = 280 mV at 1 kHz enable sub-1 dB noise figure in optimized circuits
High fT / low Cob ratio 250 MHz / 2.7 pF yields >90 MHz per pF - enhances small-signal gain-bandwidth product in cascode topologies
S-grade hFE binning 140–280 range at IC = 1 mA supports matched-pair use in differential amplifiers without external trimming
Extended junction temperature range Tj = 150°C rating allows operation in sealed enclosures or near heat-generating components

Applications

Microphone Preamp Stage IF Amplifier (FM Radio)

Use Scenario: Amplifying weak condenser microphone signals (≤10 mVRMS) before ADC or tone control circuitry.

IC Role / Device Role / Timing Role: NPN common-emitter low-noise voltage amplifier with emitter degeneration and DC bias stabilization.

Use Value: Achieves 0.5 dB NF at 1 kHz with Rg = 56 kΩ, preserving SNR in portable audio recorders and conferencing systems.

Use Scenario: Intermediate-frequency amplification in FM radio receivers operating at 10.7 MHz.

IC Role / Device Role / Timing Role: Tuned common-emitter gain block with parallel LC tank load and neutralization capacitor.

Use Value: 250 MHz fT and 2.7 pF Cob support stable 20 dB gain at 10.7 MHz without oscillation or peaking.

Instrumentation Input Buffer Discrete Op-Amp Input Pair

Use Scenario: High-impedance, low-drift buffer for precision sensor interfaces (e.g., thermocouple, strain gauge).

IC Role / Device Role / Timing Role: Emitter-follower unity-gain buffer with compensated base bias and thermal feedback.

Use Value: VCE(sat) = 0.3 V and hFE ≥ 140 ensure <0.1% gain error and <1 µV/°C offset drift in 25°C–85°C range.

Use Scenario: Input differential pair in discrete operational amplifier designs requiring matched gain and noise.

IC Role / Device Role / Timing Role: Complementary NPN pair (with 2SA1391) in long-tailed pair topology with constant-current source.

Use Value: S-grade hFE binning (140–280) and identical FBET process yield <3% hFE mismatch, minimizing input offset voltage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise NPN transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
2SC3356 fT = 7 GHz, Cob = 0.3 pF, VCEO = 12 V - higher speed but lower breakdown voltage Optimized for UHF/VHF RF amplification (e.g., 433 MHz ISM band), not AF linearity-critical stages Select 2SC3356 only when bandwidth >500 MHz is required and supply voltage ≤12 V; not drop-in for 2SC3383S-AA.
BC549C fT = 300 MHz, VCEO = 30 V, NF ≈ 4 dB @ 1 kHz - wider hFE spread (420–800), no graded bins General-purpose low-noise use; lacks SANYO's FBET process and tight noise specification traceability Choose BC549C for cost-sensitive non-critical AF gain where 0.5 dB NF is not mandatory; verify hFE matching per unit.

Compared with 2SC3356 and BC549C, the 2SC3383S-AA uniquely balances 50 V breakdown, 0.5 dB NF, and S-grade hFE binning - making it optimal for high-fidelity, medium-voltage analog signal chains where reliability and repeatability outweigh raw speed or cost.

Availability

2SC3383S-AA is available at Aetrix Electronics and suitable for microphone preamplifiers, FM radio IF amplifiers, instrumentation input buffers, and discrete op-amp input pairs requiring stable component supply and consistent low-noise performance across production batches.

Supply support for 2SC3383S-AA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2011. It emphasized high-reliability, application-optimized components for consumer and industrial electronics.

The 2SC3383S-AA belongs to SANYO's low-noise AF/NPN transistor family, engineered specifically for high-fidelity audio signal conditioning and stable RF amplification in compact consumer equipment - prioritizing noise floor, gain consistency, and thermal robustness over ultra-high-speed switching.

FAQ

What is the maximum collector-emitter voltage rating for the 2SC3383S-AA?

The 2SC3383S-AA has a VCEO rating of 50 V, verified per SANYO No.1942 datasheet Absolute Maximum Ratings table. This allows safe operation in single-supply circuits up to +45 V or dual-rail systems with ±24 V rails. Exceeding this voltage risks avalanche breakdown and permanent device failure.

Does the 2SC3383S-AA have a specified noise figure, and under what conditions?

Yes - the 2SC3383S-AA achieves a noise figure of 0.5 dB at 1 kHz when tested with VCE = 6 V, IC = 1 mA, Rg = 56 kΩ, and ∆f = 1 Hz, as documented in the Noise Characteristics section of the SANYO No.1942 datasheet. This value reflects its suitability for ultra-low-noise preamplifier design.

How is the "S" suffix in 2SC3383S-AA interpreted in terms of hFE grading?

The "S" in 2SC3383S-AA denotes the hFE bin: 140–280 at VCE = 6 V and IC = 1 mA. This is one of four factory grades (R/S/T/U) defined in the SANYO No.1942 datasheet, ensuring predictable DC gain for matched-pair or feedback-stable amplifier designs without manual sorting.

Can the 2SC3383S-AA be used as a direct replacement for the 2SC3382?

No - the 2SC3383S-AA is a distinct part with tighter specifications: it features improved noise performance (0.5 dB NF vs. 1 dB for 2SC3382), enhanced hFE binning control, and updated FBET process calibration. While both share TO-92 packaging and pinout, electrical differences require circuit validation before substitution.

What is the thermal resistance (RθJA) of the 2SC3383S-AA in its TO-92 package?

SANYO does not publish RθJA explicitly for the 2SC3383S-AA in No.1942, but based on identical TO-92 mechanical construction and thermal testing of equivalent SANYO NPN transistors (e.g., 2SC2270), RθJA is approximately 200°C/W on FR-4 PCB with minimal copper. Derating is required above 25°C ambient to maintain Tj ≤ 150°C.

2SC3383S-AA Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
-
Frequency - Transition:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SC3383S-AA FAQ

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Please submit a Request for Quotation (RFQ) for 2SC3383S-AA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 2SC3383S-AA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC3383S-AA is usually 5 days.

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2SC3383S-AA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC3383S-AA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC3383S-AA?

For technical support, including 2SC3383S-AA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC3383S-AA requirements.

6.How does Aetrix verify that 2SC3383S-AA is sourced from the original manufacturer or authorized distributors?

All 2SC3383S-AA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC3383S-AA meets industry standards.

7.What is the process for return or replacement of 2SC3383S-AA?

All 2SC3383S-AA units undergo pre-shipment inspection (PSI). If there is an issue with 2SC3383S-AA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC3383S-AA part is unused and in its original packaging.

Return procedure for 2SC3383S-AA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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