onsemi 2SC3576

Overview

2SC3576 from SANYO Electric Co., Ltd. is an NPN epitaxial planar silicon transistor designed for low-frequency general-purpose amplifier and driver applications. It delivers high DC current gain (h_FE = 800–3200), low collector-to-emitter saturation voltage (V_CE(sat) ≤ 0.5 V at I_C = 200 mA, I_B = 4 mA), and high emitter-base breakdown voltage (V_EBO ≥ 15 V), making it suitable for muting circuits and audio preamplifier stages.

For engineers reviewing the 2SC3576 datasheet, pinout, applications, or equivalent options, key selection criteria include verified h_FE range, V_CE(sat) performance under I_C/I_B = 50, thermal derating above 25°C, and TO-92 package compatibility with through-hole PCB layouts.

Technical Context

The 2SC3576 employs SANYO's FBET (Flat Base Epitaxial Transistor) process to achieve tight h_FE distribution and stable low-noise amplification in linear operation. Its V_CE(sat) ≤ 0.5 V and V_BE(sat) ≤ 1.2 V at I_C/I_B = 50 support efficient switching in muting and driver roles without excessive power loss.

Designed for ambient temperatures from –55°C to +150°C, it maintains specified h_FE, f_T = 250 MHz, and Cob = 2.7 pF at V_CB = 10 V, f = 1 MHz across its full operating range - enabling reliable use in industrial-grade analog signal paths.

Key Specifications

Pinout & Package

2SC3576 is housed in a standard TO-92 plastic package (JEDEC TO-226AA), with leads arranged in straight-line configuration and lead spacing of 1.3 mm. The package supports manual soldering and wave soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with 2SC3576, 2SC2712 offers lower cost but sacrifices gain and saturation performance, while BC547C trades h_FE consistency for broader power capability - both require revalidation of bias networks and thermal margins.

Availability

2SC3576 is available at Aetrix Electronics and suitable for low-frequency amplifier design, muting circuit implementation, and general-purpose transistor driver applications requiring stable component supply and consistent h_FE performance.

Supply support for 2SC3576 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog and discrete devices, later integrated into ON Semiconductor in 2011.

The 2SC3576 belongs to SANYO's legacy general-purpose bipolar transistor product line, engineered for reliability and consistency in audio, industrial control, and consumer electronics signal conditioning.

FAQ

What is the maximum collector current rating for the 2SC3576?

The absolute maximum collector current (I_C) for the 2SC3576 is 300 mA at T_A = 25°C. Continuous operation above 200 mA requires verification of thermal derating using the PC–Ta curve, as power dissipation must remain within the 300 mW limit. The 2SC3576 pulse rating is 500 mA (1 ms), but sustained use near maximum ratings reduces long-term reliability.

Does the 2SC3576 support operation at elevated ambient temperatures?

Yes, the 2SC3576 is rated for junction temperatures up to +150°C and storage temperatures from –55°C to +150°C. Its electrical characteristics-including h_FE, V_CE(sat), and f_T-are specified down to –40°C and up to +120°C in the datasheet curves. For operation above 25°C ambient, derate P_C linearly per the published PC–Ta graph to maintain safe junction temperature.

Is the 2SC3576 pin-compatible with other TO-92 NPN transistors like BC547?

Yes, the 2SC3576 uses the standard TO-92 package with E-C-B pinout (Emitter=1, Collector=2, Base=3), matching BC547, 2N3904, and most JEDEC-standard NPN transistors. However, direct substitution requires validation of h_FE, V_CE(sat), and f_T in-circuit, as the 2SC3576's h_FE range (800–3200) exceeds typical alternatives and may affect bias stability.

What does "FBET process" mean for the 2SC3576?

FBET stands for Flat Base Epitaxial Transistor - SANYO's proprietary fabrication method that produces uniform base thickness and doping profile. This yields tighter h_FE distribution, improved linearity, and reduced parameter drift over temperature and lifetime. In the 2SC3576, FBET directly enables the 800–3200 h_FE range and stable V_CE(sat) performance critical for precision analog use.

Can the 2SC3576 be used in switching applications?

Yes, the 2SC3576 is suitable for low-frequency switching (≤100 kHz) due to its low V_CE(sat) ≤ 0.5 V and fast turn-on/turn-off times supported by f_T = 250 MHz. It is commonly used in muting circuits and small-load drivers. For high-speed or high-repetition switching, verify switching waveforms and thermal behavior under actual load conditions, as the 2SC3576 is optimized for linear gain rather than RF switching.