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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC3647S-TD-E

Name: 2SC3647S-TD-E
Brand: onsemi
SKU: 2SC3647S-TD-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC3647S-TD-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SC3647S-TD-E.pdf

Description:: TRANS NPN 100V 2A PCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC3647S-TD-E from onsemi is a PNP bipolar junction transistor designed for medium-power switching applications, featuring −100 V V_CEO, −2 A I_C, low −0.22 V typical V_CE(sat) at −1 A/−100 mA drive, 120 MHz f_T, and SOT-89-3 package. It serves as a high-voltage, low-saturation switch in DC-DC converter output stages and relay drivers.

For engineers reviewing the 2SC3647S-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, confirmed −100 V breakdown rating, measured −0.22 V saturation voltage under specified bias, documented SOT-89 thermal performance on ceramic substrate, and rank-specific h_FE (100–400) per ordering suffix.

Technical Context

This PNP transistor uses onsemi's FBET/MBIT processes to achieve high breakdown voltage and low saturation voltage simultaneously. Its design targets stable DC switching with minimal conduction loss in industrial power control circuits where base drive current is constrained.

The device operates with fixed polarity: emitter is most positive terminal, collector is most negative under active conduction. Switching behavior is characterized by 80 ns turn-on, 750 ns storage, and 40 ns fall time under −0.7 A I_C, −100 mA I_B conditions - values validated per Figure 1 test circuit in the official datasheet.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - supports operation in 48 V and 60 V DC bus systems with safety margin
I_C	−2 A continuous - suitable for driving 1 A load with 2× derating for reliability
V_CE(sat)	−0.22 V typ. at −1 A/−100 mA - reduces conduction loss to ≤220 mW in saturated switch mode
f_T	120 MHz - enables use in <10 MHz switching converters without gain roll-off issues
h_FE	100–400 (rank-dependent) - ensures predictable base drive requirements across production lots
P_C	500 mW on 250 mm² ceramic - defines minimum heatsinking area for 1 W dissipation at T_A = 75°C
C_ob	16 pF at −10 V V_CB - limits high-frequency Miller feedback in hard-switched topologies

Pinout & Package

SOT-89-3 (Case 419AU), 4.50 × 2.50 × 1.50 mm body with 1.50 mm lead pitch. Mounting requires ceramic substrate (250 mm² × 0.8 mm) for rated 500 mW dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires −100 mA for full saturation at −1 A I_C
2	Collector	High-side connection point in PNP switch configuration; tied to most negative rail
3	Emitter	Common reference terminal; connected to system ground or positive supply return path

Key Features

Feature	Design Value
Low V_CE(sat)	−0.22 V typical enables <220 mW conduction loss at −1 A, improving thermal efficiency in compact layouts
High V_CEO	−100 V rating allows direct use in 48 V telecom and industrial power rails without series stacking
Ultrasmall SOT-89	4.5 × 2.5 mm footprint supports high-density hybrid IC integration and space-constrained PCBs
Pb-free & Halide-free	Meets RoHS Directive 2011/65/EU and J-STD-609 Class 1 moisture sensitivity without lead finish compromise
Rank-graded h_FE	R/S/T bins (100–400) allow precise base resistor selection per unit, reducing design margin overdesign

Applications

DC-DC Converter Output Stage	Industrial Relay Driver
Use Scenario: High-side PNP switch in non-isolated buck-derived topology delivering 1 A at 24 V output. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer to output filter; operates in saturation/cutoff with <100 ns transition times. Use Value: −0.22 V V_CE(sat) limits conduction loss to 220 mW, enabling passive cooling on 250 mm² ceramic substrate.	Use Scenario: Driving 12 V/500 mA electromagnetic relay coil from microcontroller GPIO with level-shifting. IC Role / Device Role / Timing Role: Medium-current interface buffer; provides current gain and voltage inversion between logic and inductive load. Use Value: 100–400 h_FE range ensures reliable turn-on with 5–10 mA MCU drive, eliminating need for Darlington stage.
LED String Current Regulator	Overvoltage Protection Clamp
Use Scenario: Constant-current sink for 3–5 white LED strings in signage backlighting, operating from 36 V supply. IC Role / Device Role / Timing Role: Linear current regulator in emitter-follower configuration; dissipates excess voltage as heat. Use Value: −100 V V_CEO withstands transient surges up to 80 V, preventing latch-up during hot-plug events.	Use Scenario: Crowbar element in 48 V battery management system, triggered by comparator when voltage exceeds 52 V. IC Role / Device Role / Timing Role: Fast-acting shunt switch clamping overvoltage by shorting rail to ground upon fault detection. Use Value: 750 ns storage time enables sub-microsecond response to overvoltage, limiting energy delivered to protected circuitry.

DC-DC Converter Output Stage

Industrial Relay Driver

Use Scenario: High-side PNP switch in non-isolated buck-derived topology delivering 1 A at 24 V output.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer to output filter; operates in saturation/cutoff with <100 ns transition times.

Use Value: −0.22 V V_CE(sat) limits conduction loss to 220 mW, enabling passive cooling on 250 mm² ceramic substrate.

Use Scenario: Driving 12 V/500 mA electromagnetic relay coil from microcontroller GPIO with level-shifting.

IC Role / Device Role / Timing Role: Medium-current interface buffer; provides current gain and voltage inversion between logic and inductive load.

Use Value: 100–400 h_FE range ensures reliable turn-on with 5–10 mA MCU drive, eliminating need for Darlington stage.

LED String Current Regulator

Overvoltage Protection Clamp

Use Scenario: Constant-current sink for 3–5 white LED strings in signage backlighting, operating from 36 V supply.

IC Role / Device Role / Timing Role: Linear current regulator in emitter-follower configuration; dissipates excess voltage as heat.

Use Value: −100 V V_CEO withstands transient surges up to 80 V, preventing latch-up during hot-plug events.

Use Scenario: Crowbar element in 48 V battery management system, triggered by comparator when voltage exceeds 52 V.

IC Role / Device Role / Timing Role: Fast-acting shunt switch clamping overvoltage by shorting rail to ground upon fault detection.

Use Value: 750 ns storage time enables sub-microsecond response to overvoltage, limiting energy delivered to protected circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD2955T4G	Higher −60 V V_CEO, −10 A I_C, TO-252 package; 1.5 V higher \|V_CE(sat)\| at rated current	Requires larger PCB area and heatsink; suited for >5 A loads but over-specified for 1–2 A switching	Select when higher current headroom and TO-252 mounting compatibility are required
2SA1020S-TD-E	Same SOT-89-3 package; −80 V V_CEO, −1.5 A I_C, −0.35 V V_CE(sat) typical - lower voltage rating and higher saturation loss	Limited to ≤36 V systems; less efficient in high-current saturation due to +0.13 V higher V_CE(sat)	Acceptable only if system max voltage ≤36 V and thermal budget allows +130 mW extra loss

Compared with MJD2955T4G and 2SA1020S-TD-E, the 2SC3647S-TD-E uniquely balances −100 V capability, SOT-89 compactness, and −0.22 V low saturation in a single package - making it optimal for space-constrained 48 V industrial switches where thermal density matters.

Availability

2SC3647S-TD-E is available at Aetrix Electronics and suitable for industrial power supplies, relay interface modules, and LED driver circuits requiring stable component supply and RoHS-compliant packaging.

Supply support for 2SC3647S-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power, analog, sensing, and connectivity solutions.

The 2SC3647S-TD-E belongs to onsemi's general-purpose bipolar transistor product line, engineered for robust medium-power switching in industrial, automotive, and consumer power management systems.

FAQ

What is the absolute maximum collector-emitter voltage rating for the 2SC3647S-TD-E?

The 2SC3647S-TD-E has an absolute maximum V_CEO rating of −100 V at T_A = 25°C, verified per the onsemi datasheet Absolute Maximum Ratings table. This rating applies with open-base condition and defines the upper limit for safe DC blocking capability in PNP configuration. Exceeding this voltage risks irreversible avalanche breakdown and permanent device failure.

Does the 2SC3647S-TD-E have a Pb-free and halogen-free construction?

Yes, the 2SC3647S-TD-E is explicitly marked as Pb-free and halide-free in the onsemi datasheet Features section and Ordering Information table. It complies with RoHS Directive 2011/65/EU and meets J-STD-609 Class 1 moisture sensitivity standards without compromising solderability or long-term reliability.

What is the typical DC current gain (h_FE) range for the 2SC3647S-TD-E at −100 mA collector current?

The 2SC3647S-TD-E exhibits h_FE ranging from 100 to 400 at V_CE = −5 V and I_C = −100 mA, with specific binning (R/S/T) indicated by the device marking. This range is confirmed in the Electrical Characteristics table and enables precise base resistor calculation for consistent saturation across production units.

How is thermal performance defined for the 2SC3647S-TD-E in its SOT-89 package?

The 2SC3647S-TD-E delivers 500 mW collector dissipation when mounted on a 250 mm² × 0.8 mm ceramic substrate, as specified in the Absolute Maximum Ratings table. Derating follows the curve in Figure 17: at 75°C ambient, usable power drops to ~1.0 W; no heatsink is required below 500 mW with proper substrate mounting.

What are the confirmed switching times for the 2SC3647S-TD-E under standard test conditions?

Per the datasheet Switching Time Test Circuit (Figure 1), the 2SC3647S-TD-E achieves 80 ns turn-on time (t_on), 750 ns storage time (t_stg), and 40 ns fall time (t_f) at I_C = −0.7 A and I_B = −100 mA. These values are measured with reversed polarity for PNP operation and define hard-switching capability in <1 MHz power stages.

2SC3647S-TD-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 5V

Power - Max:: 500 mW

Frequency - Transition:: 120MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SC3647S-TD-E FAQ

1.How can I place an order for 2SC3647S-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC3647S-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC3647S-TD-E reliable?

The price and inventory of 2SC3647S-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC3647S-TD-E is usually 5 days.

3.What payment methods are accepted for 2SC3647S-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC3647S-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC3647S-TD-E?

2SC3647S-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC3647S-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC3647S-TD-E?

For technical support, including 2SC3647S-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC3647S-TD-E requirements.

6.How does Aetrix verify that 2SC3647S-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SC3647S-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC3647S-TD-E meets industry standards.

7.What is the process for return or replacement of 2SC3647S-TD-E?

All 2SC3647S-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC3647S-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC3647S-TD-E part is unused and in its original packaging.

Return procedure for 2SC3647S-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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