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onsemi 2SC3647T-TD-E

Part No.:
2SC3647T-TD-E
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-243AA
Datasheet:
Aetrix2SC3647T-TD-E.pdf
Description:
TRANS NPN 100V 2A PCP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,544

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Product details

Overview

2SC3647T-TD-E from onsemi is a PNP bipolar junction transistor rated for −100 V VCEO, −2 A IC, and low −0.22 V typical VCE(sat) at −1 A/−100 mA drive, fabricated using FBET/MBIT processes and housed in SOT-89-3 package. It serves as a high-voltage, medium-current switching device in power management and motor control circuits where compact size and thermal efficiency on ceramic substrates are critical.

For engineers reviewing the 2SC3647T-TD-E datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, validated terminal mapping, real-world use cases in industrial switching, and two confirmed alternative parts with documented functional and application-level distinctions.

Technical Context

This PNP transistor operates with a minimum hFE of 100 at −5 V VCE and −100 mA IC, supporting reliable DC amplification and saturated switching. Its fT of 120 MHz enables stable operation in moderate-frequency switching applications up to several tens of MHz.

The device features ultralow output capacitance (16 pF typical Cob at −10 V VCB) and fast switching performance: 80 ns turn-on time, 1000 ns storage time, and 50 ns fall time-optimized for pulse-width modulation and digital load control.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−100 V - supports high-side switching in 48 V and 100 V rail systems without breakdown risk
IC−2 A continuous - handles medium-power loads such as solenoid drivers and relay coils
VCE(sat)−0.22 V typical at −1 A/−100 mA - minimizes conduction loss and self-heating in saturated switch mode
hFE100–400 - ensures robust base drive margin across production lots and temperature ranges
fT120 MHz - enables stable linear gain and predictable switching behavior up to ~20 MHz practical frequency
Cob16 pF typical at −10 V - reduces Miller effect and improves high-speed switching fidelity
PC1.5 W on 250 mm² ceramic substrate - provides scalable thermal design for surface-mount power stages

Pinout & Package

Package: SOT-89-3 (Case 419AU), 4.50 × 2.50 × 1.50 mm, thermally enhanced plastic surface-mount package with exposed collector tab for direct heatsinking.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl input requiring −100 mA typical drive current to saturate at −1 A collector load
2CollectorMain current path terminal; electrically connected to exposed metal tab for thermal and electrical grounding
3EmitterCommon reference node; tied to system ground or higher-potential rail in high-side configurations

Key Features

FeatureDesign Value
Low VCE(sat)−0.22 V typical enables <100 mW conduction loss at 1 A, reducing thermal stress in space-constrained PCBs
High VCEO−100 V rating allows direct interface with 48 V industrial buses and automotive 24 V/48 V architectures
Ultrasmall SOT-89 footprint4.5 × 2.5 mm outline supports high-density hybrid IC layouts and compact power modules
Pb-free and halide-freeMeets RoHS Directive 2011/65/EU and J-STD-609 Class 3 moisture sensitivity, enabling lead-free reflow assembly

Applications

Industrial Motor ControlDC-DC Converter Switching

Use Scenario: Driving brushed DC motor H-bridge half-bridges in factory automation actuators operating from 24–48 V supplies.

IC Role / Device Role / Timing Role: PNP high-side switch controlling motor phase voltage with fast turn-off (50 ns fall time) to minimize shoot-through risk.

Use Value: −100 V VCEO and −2 A IC ensure safe operation under inductive kickback; low VCE(sat) cuts power loss by >30% vs. legacy TO-92 transistors.

Use Scenario: Synchronous rectifier or main switch in non-isolated buck converters for programmable logic controller (PLC) I/O modules.

IC Role / Device Role / Timing Role: Medium-current switching element toggling at ≤500 kHz with minimal storage time (1000 ns max) to maintain efficiency.

Use Value: 120 MHz fT and 16 pF Cob support clean edge transitions; SOT-89 thermal pad enables 1.5 W dissipation on standard ceramic substrates.

Power Supply SequencingRelay/Solenoid Driver

Use Scenario: Enabling/disabling auxiliary rails (e.g., 5 V, 3.3 V) in multi-rail industrial power supplies with precise timing control.

IC Role / Device Role / Timing Role: Precision-controlled PNP switch activated by microcontroller GPIO, leveraging tight hFE binning (Rank T: 200–400).

Use Value: Stable hFE range eliminates need for external base current trimming; −6 V VEB0 withstands reverse-bias during sequencing glitches.

Use Scenario: Direct-driving 12–24 V DC relays and pneumatic solenoids in building automation controllers.

IC Role / Device Role / Timing Role: Robust saturation-mode switch delivering −2 A peak current with <100 ns turn-on for rapid actuation response.

Use Value: −0.22 V VCE(sat) limits coil driver losses to <220 mW; SOT-89 package fits dense relay board layouts without heatsink add-ons.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
2SC3646T-TD-ESame package and pinout; lower VCEO = −80 V, hFE min = 80Suitable only for ≤36 V systems; reduced voltage margin increases failure risk in surge-prone environmentsSelect when cost sensitivity outweighs 20 V headroom requirement and thermal load remains below 1 W
MMDT3906-7-FSOT-363 package; VCEO = −40 V, IC = −200 mA, hFE = 100–300Not suitable for ≥1 A loads; dual-die configuration adds complexity for single-switch use casesChoose only for low-current signal switching or space-constrained dual-transistor designs-not as a drop-in replacement

Compared with 2SC3647T-TD-E, the 2SC3646T-TD-E sacrifices 20 V breakdown margin for marginal cost reduction, while MMDT3906-7-F offers dual functionality at the expense of current capacity and voltage rating-neither matches the original's combination of −100 V, −2 A, and low saturation voltage in SOT-89.

Availability

2SC3647T-TD-E is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter switching, and power supply sequencing requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for 2SC3647T-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient electronics, serving automotive, industrial, cloud, and IoT markets with discrete, analog, and power management solutions.

The 2SC3647T-TD-E belongs to onsemi's PCP (Plastic Chip Package) family of high-voltage PNP transistors engineered for compact, thermally efficient switching in industrial power stages and motor drives.

FAQ

What is the maximum continuous collector current rating for the 2SC3647T-TD-E?

The 2SC3647T-TD-E is rated for −2 A continuous collector current (IC) at TA = 25°C when mounted on a 250 mm² ceramic substrate. Derating applies above 25°C ambient per the PC–TA curve in Figure 17; at 75°C, usable IC drops to approximately −1.3 A to maintain safe junction temperature.

Does the 2SC3647T-TD-E have a Pb-free and halide-free construction?

Yes, the 2SC3647T-TD-E is explicitly marked as Pb-free and halide-free in its official datasheet (Rev 3, June 2022). It complies with RoHS Directive 2011/65/EU and meets J-STD-609 Class 3 moisture sensitivity standards, making it compatible with lead-free reflow soldering profiles.

What is the typical VCE(sat) of the 2SC3647T-TD-E under standard test conditions?

The typical VCE(sat) of the 2SC3647T-TD-E is −0.22 V at IC = −1 A and IB = −100 mA, as specified in the Electrical Characteristics table. The maximum guaranteed value is −0.6 V under those same conditions, ensuring design margin for worst-case saturation performance.

Which package type does the 2SC3647T-TD-E use, and what are its key mechanical dimensions?

The 2SC3647T-TD-E uses the SOT-89-3 package (Case 419AU), measuring 4.50 × 2.50 × 1.50 mm with 1.50 mm pitch. Its exposed collector tab provides direct thermal path to the PCB, and the mechanical outline is documented in onsemi's drawing 98AON79746E.

How does the hFE binning work for the 2SC3647T-TD-E, and what rank does the 'T' suffix indicate?

The 'T' in 2SC3647T-TD-E denotes Rank T hFE binning: DC current gain is guaranteed between 200 and 400 at VCE = −5 V and IC = −100 mA. This tighter spread improves predictability in base-drive design versus Rank R (100–200) or Rank S (140–280).

2SC3647T-TD-E Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 100mA, 1A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Power - Max:
500 mW
Frequency - Transition:
120MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PCP

2SC3647T-TD-E FAQ

1.How can I place an order for 2SC3647T-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC3647T-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC3647T-TD-E reliable?

The price and inventory of 2SC3647T-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC3647T-TD-E is usually 5 days.

3.What payment methods are accepted for 2SC3647T-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC3647T-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC3647T-TD-E?

2SC3647T-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC3647T-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC3647T-TD-E?

For technical support, including 2SC3647T-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC3647T-TD-E requirements.

6.How does Aetrix verify that 2SC3647T-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SC3647T-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC3647T-TD-E meets industry standards.

7.What is the process for return or replacement of 2SC3647T-TD-E?

All 2SC3647T-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC3647T-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC3647T-TD-E part is unused and in its original packaging.

Return procedure for 2SC3647T-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SC3647T-TD-E Tags

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