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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC3648S-TD-E

Name: 2SC3648S-TD-E
Brand: onsemi
SKU: 2SC3648S-TD-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC3648S-TD-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SC3648S-TD-E.pdf

Description:: TRANS NPN 160V 0.7A PCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC3648S-TD-E from onsemi is an NPN bipolar junction transistor in PCP (SOT-89) package, rated for −160 V V_CEO, 0.7 A I_C, 500 mW P_C (ceramic substrate), with low V_CE(sat) of 0.12 V at I_C = 250 mA / I_B = 25 mA, and f_T = 120 MHz - used in color TV audio output stages and switching inverters.

For engineers reviewing the 2SC3648S-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, saturation voltage under high-current drive, thermal dissipation on ceramic substrates, and fast switching performance in hybrid IC layouts.

Technical Context

This NPN transistor employs FBET and MBIT processes to achieve high breakdown voltage and large current capacity while maintaining ultrasmall PCP (SOT-89) footprint. Its design supports high-density hybrid IC integration where space-constrained mounting and thermal management on ceramic substrates are critical.

Electrical behavior is characterized by two h_FE bins (S: 140–280, T: 200–400 at I_C = 100 mA), fast switching (t_on = 50 ns, t_f = 60 ns), and low output capacitance (C_ob = 8 pF at V_CB = −10 V), enabling stable operation in high-frequency linear and switching applications up to 120 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−160 V - supports high-voltage collector rail operation in TV horizontal deflection and inverter circuits
I_C	0.7 A continuous - delivers sufficient drive current for audio output stage loads without forced cooling
V_CE(sat)	0.12 V max at I_C = 250 mA / I_B = 25 mA - minimizes conduction loss and self-heating in saturated-switching mode
f_T	120 MHz - enables stable amplification and switching up to VHF band in hybrid amplifier modules
P_C	500 mW on ceramic substrate (250 mm² × 0.8 mm) - defines thermal derating envelope for PCB layout
C_ob	8 pF at V_CB = −10 V - reduces Miller effect and improves high-frequency gain stability
t_on/t_f	50 ns / 60 ns - ensures clean edge transitions in pulse-driven inverter and driver stages

Pinout & Package

Package: PCP (JEITA/JEDEC SC-62, industry-equivalent to SOT-89). Dimensions: 4.5 × 2.5 × 1.6 mm (L × W × H), mass 0.058 g. Mounting optimized for ceramic substrates with exposed collector tab for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input terminal; requires current-limited drive (I_B ≤ 25 mA typical for full saturation)
2	Collector	High-voltage, high-current output node; electrically and thermally connected to exposed metal tab
3	Emitter	Common reference terminal; tied to ground or negative rail in common-emitter configurations

Key Features

Feature	Design Value
Low V_CE(sat)	0.12 V max enables <100 mW conduction loss at 250 mA, reducing thermal stress in compact hybrids
Ultrasmall PCP package	4.5 × 2.5 mm footprint allows >30% board area reduction vs. TO-92 in multi-transistor hybrid ICs
High V_(BR)CEO	−160 V rating provides 20% margin above standard 130 V CRT line supply rails
Fast switching	50 ns turn-on + 60 ns fall time supports >2 MHz PWM in DC-DC inverter stages
FBET/MBIT process	Enables simultaneous optimization of breakdown voltage, gain uniformity, and switching speed

Applications

Color TV Audio Output Stage	Inverter Driver Circuit
Use Scenario: Final-stage amplification of audio signals driving loudspeaker loads in analog CRT television sets. IC Role / Device Role / Timing Role: NPN power switch operating in Class AB linear mode with active bias control. Use Value: Low V_CE(sat) and high h_FE reduce crossover distortion and improve efficiency at 0.5–0.7 A peak load currents.	Use Scenario: High-side switching element in flyback or half-bridge DC-AC inverters for backlight or auxiliary power supplies. IC Role / Device Role / Timing Role: Fast-switching NPN transistor driven by pulse transformer or optocoupler-isolated gate driver. Use Value: 120 MHz f_T and 60 ns fall time ensure minimal dead-time loss and clean square-wave output at 20–50 kHz.
Hybrid Power Amplifier Module	High-Voltage Signal Switching
Use Scenario: Embedded power transistor in sealed hybrid ICs for industrial audio or instrumentation amplifiers. IC Role / Device Role / Timing Role: Discrete gain and output stage component mounted directly on ceramic substrate with integrated passive network. Use Value: PCP package's exposed collector tab enables direct thermal coupling to substrate, sustaining 500 mW dissipation without heatsink.	Use Scenario: Precision on/off control of −100 V signal paths in test equipment or analog multiplexers. IC Role / Device Role / Timing Role: High-voltage NPN switch biased into cutoff/saturation by TTL-compatible logic levels. Use Value: −160 V V_CEO and −180 V V_CBO prevent leakage-induced false triggering in high-impedance signal chains.

Color TV Audio Output Stage

Inverter Driver Circuit

Use Scenario: Final-stage amplification of audio signals driving loudspeaker loads in analog CRT television sets.

IC Role / Device Role / Timing Role: NPN power switch operating in Class AB linear mode with active bias control.

Use Value: Low V_CE(sat) and high h_FE reduce crossover distortion and improve efficiency at 0.5–0.7 A peak load currents.

Use Scenario: High-side switching element in flyback or half-bridge DC-AC inverters for backlight or auxiliary power supplies.

IC Role / Device Role / Timing Role: Fast-switching NPN transistor driven by pulse transformer or optocoupler-isolated gate driver.

Use Value: 120 MHz f_T and 60 ns fall time ensure minimal dead-time loss and clean square-wave output at 20–50 kHz.

Hybrid Power Amplifier Module

High-Voltage Signal Switching

Use Scenario: Embedded power transistor in sealed hybrid ICs for industrial audio or instrumentation amplifiers.

IC Role / Device Role / Timing Role: Discrete gain and output stage component mounted directly on ceramic substrate with integrated passive network.

Use Value: PCP package's exposed collector tab enables direct thermal coupling to substrate, sustaining 500 mW dissipation without heatsink.

Use Scenario: Precision on/off control of −100 V signal paths in test equipment or analog multiplexers.

IC Role / Device Role / Timing Role: High-voltage NPN switch biased into cutoff/saturation by TTL-compatible logic levels.

Use Value: −160 V V_CEO and −180 V V_CBO prevent leakage-induced false triggering in high-impedance signal chains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC3648T-TD-E	Higher h_FE bin (200–400 vs. 140–280); identical V_CEO, I_C, package, and switching specs	Better suited for low-base-drive applications where I_B margin is constrained	Select when gain consistency at I_C = 100 mA is prioritized over cost-sensitive volume production
MMBT3904LT1G	Lower V_CEO (−40 V), lower I_C (0.2 A), SOT-23 package, higher V_CE(sat) (0.3 V)	Only suitable for low-voltage, low-power logic-level switching - not a drop-in replacement	Consider only for redesigns targeting cost and footprint reduction where voltage/current requirements are relaxed

Compared with 2SC3648T-TD-E, the 2SC3648S-TD-E offers tighter h_FE control for predictable base drive sizing; versus MMBT3904LT1G, it delivers 4× higher voltage rating and 3.5× higher current capability - essential for legacy TV and industrial inverter designs requiring robustness at −160 V.

Availability

2SC3648S-TD-E is available at Aetrix Electronics and suitable for color TV repair, hybrid power amplifier manufacturing, and industrial inverter production requiring stable component supply across extended product lifecycles.

Supply support for 2SC3648S-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and consumer markets.

The 2SC3648 series belongs to onsemi's legacy bipolar power transistor product line, engineered specifically for high-reliability, high-voltage analog and switching applications in CRT-based video systems and hybrid IC modules.

FAQ

What is the maximum continuous collector current rating for the 2SC3648S-TD-E?

The 2SC3648S-TD-E is rated for a maximum continuous collector current (I_C) of 0.7 A at T_a = 25°C when mounted on a ceramic substrate (250 mm² × 0.8 mm). At elevated ambient temperatures or on standard FR-4 PCBs, derating applies per the PC–Ta curve in the datasheet. Pulse current capability reaches 1.5 A for short durations.

Is the 2SC3648S-TD-E RoHS compliant and lead-free?

Yes, the 2SC3648S-TD-E is Pb-free and RoHS compliant, as confirmed by the "Pb Free" marking in the ordering information section of the official onsemi datasheet (Ordering Number EN1788C). The TD-E suffix explicitly denotes lead-free packaging and termination.

What does the 'S' suffix in 2SC3648S-TD-E indicate?

The 'S' in 2SC3648S-TD-E denotes the h_FE gain rank: 140–280 at I_C = 100 mA and V_CE = −5 V. This distinguishes it from the 'T' variant (200–400) and ensures consistent base drive requirements across production lots of the 2SC3648S-TD-E.

Can the 2SC3648S-TD-E be used as a direct replacement for the 2SC3648T-TD-E?

No - while both share identical package, voltage/current ratings, and switching characteristics, the 2SC3648S-TD-E has a lower h_FE range (140–280) than the 2SC3648T-TD-E (200–400). Substituting the 2SC3648S-TD-E may require increasing base drive current to maintain saturation, especially under worst-case gain conditions.

What is the thermal resistance junction-to-ambient (R_θJA) for the 2SC3648S-TD-E?

The datasheet does not specify R_θJA as a single value. Instead, it gives dissipation limits: 500 mW on ceramic substrate (250 mm² × 0.8 mm) and 1.3 W under the same condition with no heat sink. From these, effective R_θJA is approximately 300°C/W on ceramic and 115°C/W with enhanced thermal path - values derived from ΔT = P × R_θJA and T_j ≤ 150°C.

2SC3648S-TD-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 700 mA

Voltage - Collector Emitter Breakdown (Max):: 160 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 25mA, 250mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 5V

Power - Max:: 500 mW

Frequency - Transition:: 120MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SC3648S-TD-E FAQ

1.How can I place an order for 2SC3648S-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC3648S-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC3648S-TD-E reliable?

The price and inventory of 2SC3648S-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC3648S-TD-E is usually 5 days.

3.What payment methods are accepted for 2SC3648S-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC3648S-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC3648S-TD-E?

2SC3648S-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC3648S-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC3648S-TD-E?

For technical support, including 2SC3648S-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC3648S-TD-E requirements.

6.How does Aetrix verify that 2SC3648S-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SC3648S-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC3648S-TD-E meets industry standards.

7.What is the process for return or replacement of 2SC3648S-TD-E?

All 2SC3648S-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC3648S-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC3648S-TD-E part is unused and in its original packaging.

Return procedure for 2SC3648S-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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