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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC3649S-TD-H

Name: 2SC3649S-TD-H
Brand: onsemi
SKU: 2SC3649S-TD-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC3649S-TD-H

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SC3649S-TD-H.pdf

Description:: TRANS NPN 160V 1.5A PCP

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Product details

Overview

2SC3649S-TD-H from onsemi is an NPN bipolar junction transistor in PCP (SOT-89) package, rated for 160 V V_CEO, 1.5 A continuous collector current, and low 130–450 mV V_CE(sat) at I_C = 500 mA / I_B = 50 mA. It delivers 120 MHz f_T, supports high-density hybrid ICs, and is used in DC-DC converter switching stages requiring fast turn-on and low saturation loss.

For engineers reviewing the 2SC3649S-TD-H datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, terminal mapping, thermal derating behavior, switching timing data, and Pb-free/Halogen-free compliance details per ON Semiconductor No.2007-2/7.

Technical Context

This NPN transistor uses FBET and MBIT processes to achieve high breakdown voltage (V_(BR)CBO = –180 V), low saturation voltage, and stable h_FE across 10 mA–100 mA bias ranges. Its 120 MHz f_T and 14–22 pF C_ob support medium-frequency switching up to ~50 MHz in hard-switched topologies.

Designed for ceramic substrate mounting (250 mm² × 0.8 mm), it delivers 1.5 W P_C at T_a = 25°C with defined thermal derating-enabling use in compact power regulators where heatsinking is constrained and reliability under pulsed loads (I_CP = 2.5 A) is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	160 V - Maximum safe collector-emitter voltage before avalanche; enables use in 120 V bus applications with margin.
I_C (cont.)	1.5 A - Continuous DC current handling; supports 1.2 A typical load in 5 V–24 V DC-DC output stages.
V_CE(sat)	130–450 mV @ I_C/I_B = 10 - Low conduction loss reduces heat generation in saturated-switching mode.
f_T	120 MHz - Gain-bandwidth product confirms suitability for <50 MHz switching in PWM controllers and gate drivers.
C_ob	14–22 pF @ V_CB = –10 V - Output capacitance impacts turn-off energy and snubber design in flyback/forward converters.
t_on/t_f	40 ns / 40–80 ns - Fast switching times reduce transition losses; storage time t_stg = 0.7–1.2 μs limits minimum duty cycle.
P_C (ceramic)	1.5 W @ T_a = 25°C - Power dissipation rating assumes 250 mm² ceramic substrate; derates linearly above 25°C ambient.

Pinout & Package

2SC3649S-TD-H is housed in a PCP package-JEITA/JEDEC-registered as SC-62 (equivalent to SOT-89, TO-243)-with gull-wing leads optimized for surface-mount reflow on ceramic substrates. Dimensions: 4.5 mm × 2.5 mm × 1.6 mm (L×W×H), mass = 0.058 g.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input; requires ≥50 mA base drive for full saturation at 500 mA collector current.
2	Collector	High-side switch node; connected to load or inductive energy storage; rated for –160 V reverse blocking.
3	Emitter	Power return path; tied to ground or low-side reference; must be routed with low-inductance layout for fast switching.

Key Features

Feature	Design Value
Low V_CE(sat)	130 mV min ensures ≤0.065 W conduction loss at 500 mA, reducing thermal stress in space-constrained PCBs.
High V_(BR)CBO	–180 V enables robust operation in 100–120 V AC-derived supplies with >20% safety margin against transients.
Ultrasmall PCP package	0.058 g mass and 4.5 × 2.5 mm footprint allow placement adjacent to ICs in hybrid power modules without board area penalty.
Pb-Free & Halogen-Free	TD-H suffix certifies compliance with JESD204B and IEC 61249-2-21, supporting RoHS 3 and ELV requirements.
FBET/MBIT process	Enables tight h_FE distribution (Rank S: 140–280) and stable gain over temperature (±15% from –25°C to +75°C).

Applications

DC-DC Converter Switch	Linear Regulator Pass Element
Use Scenario: High-efficiency 5 V–24 V buck converter operating at 100–500 kHz with ceramic output capacitor. IC Role / Device Role / Timing Role: Main switching transistor in low-side configuration; driven by PWM controller with 50 ns rise/fall edge control. Use Value: 40 ns t_on and 40–80 ns t_f minimize dead-time losses; 130 mV V_CE(sat) cuts conduction loss by 35% vs. standard BJT alternatives.	Use Scenario: Adjustable positive linear regulator delivering 1.5 A at 3.3 V/5 V from 12 V input in industrial sensor interface. IC Role / Device Role / Timing Role: Series pass element controlled by error amplifier; biased in active region for precise voltage regulation. Use Value: 1.5 A I_C rating and 150°C T_j max enable sustained operation at 1.2 A with 5 K/W thermal resistance; h_FE ≥100 ensures stable loop gain.
Motor Driver Half-Bridge	High-Voltage Signal Switch
Use Scenario: 24 V brushed DC motor driver with PWM speed control and freewheeling diode integration. IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg; commutated at ≤20 kHz with 2.5 A pulse capability. Use Value: 2.5 A I_CP rating handles motor stall currents; 0.7–1.2 μs t_stg prevents shoot-through during direction reversal.	Use Scenario: Isolated logic-level translator switching 100 V DC signals in PLC I/O module input conditioning. IC Role / Device Role / Timing Role: High-voltage level shifter between microcontroller GPIO and field-side sensing circuitry. Use Value: –160 V V_CEO withstands induced surges; 1 μA I_CBO ensures signal integrity at 100 V bias with minimal leakage drift.

DC-DC Converter Switch

Linear Regulator Pass Element

Use Scenario: High-efficiency 5 V–24 V buck converter operating at 100–500 kHz with ceramic output capacitor.

IC Role / Device Role / Timing Role: Main switching transistor in low-side configuration; driven by PWM controller with 50 ns rise/fall edge control.

Use Value: 40 ns t_on and 40–80 ns t_f minimize dead-time losses; 130 mV V_CE(sat) cuts conduction loss by 35% vs. standard BJT alternatives.

Use Scenario: Adjustable positive linear regulator delivering 1.5 A at 3.3 V/5 V from 12 V input in industrial sensor interface.

IC Role / Device Role / Timing Role: Series pass element controlled by error amplifier; biased in active region for precise voltage regulation.

Use Value: 1.5 A I_C rating and 150°C T_j max enable sustained operation at 1.2 A with 5 K/W thermal resistance; h_FE ≥100 ensures stable loop gain.

Motor Driver Half-Bridge

High-Voltage Signal Switch

Use Scenario: 24 V brushed DC motor driver with PWM speed control and freewheeling diode integration.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg; commutated at ≤20 kHz with 2.5 A pulse capability.

Use Value: 2.5 A I_CP rating handles motor stall currents; 0.7–1.2 μs t_stg prevents shoot-through during direction reversal.

Use Scenario: Isolated logic-level translator switching 100 V DC signals in PLC I/O module input conditioning.

IC Role / Device Role / Timing Role: High-voltage level shifter between microcontroller GPIO and field-side sensing circuitry.

Use Value: –160 V V_CEO withstands induced surges; 1 μA I_CBO ensures signal integrity at 100 V bias with minimal leakage drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC3649T-TD-H	Higher h_FE range (200–400 vs. 140–280); otherwise identical ratings, pinout, and package.	Better suited for low-base-drive designs (e.g., microcontroller GPIO direct drive) where β ≥200 improves noise immunity.	Select 2SC3649T-TD-H when base current budget is limited or gain stability across temperature is critical.
MJD122G	TO-252 (DPAK) package; higher P_C = 2.5 W; V_CEO = 100 V; V_CE(sat) = 1.2 V @ 3 A - less efficient at low current.	Preferred for higher-power (>2 A), lower-voltage (<60 V) applications where PCB real estate allows larger package.	Choose MJD122G only if thermal headroom exceeds 1.5 W or V_CEO margin below 160 V is acceptable.

Compared with 2SC3649T-TD-H, the 2SC3649S-TD-H offers tighter h_FE control at mid-range gain, simplifying bias network design; versus MJD122G, it trades package size and absolute power for superior low-current efficiency and high-voltage capability-making it optimal for compact, 100–160 V switching nodes.

Availability

2SC3649S-TD-H is available at Aetrix Electronics and suitable for DC-DC converters, linear regulators, motor drivers, and high-voltage signal switches requiring stable component supply, halogen-free compliance, and consistent SOT-89 form factor across production lots.

Supply support for 2SC3649S-TD-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The 2SC3649S-TD-H belongs to onsemi's general-purpose bipolar transistor family designed for high-voltage, medium-current switching in space-constrained power systems-emphasizing reliability, thermal performance on ceramic substrates, and environmental compliance.

FAQ

What is the maximum continuous collector current rating for the 2SC3649S-TD-H?

The 2SC3649S-TD-H is rated for 1.5 A continuous collector current (I_C) at T_a = 25°C when mounted on a 250 mm² ceramic substrate. Derating applies above 25°C ambient per the PC–Ta curve in ON Semiconductor No.2007-4/7; at 75°C ambient, usable I_C drops to approximately 1.0 A.

Does the 2SC3649S-TD-H have Pb-free and halogen-free certification?

Yes-the "-H" suffix in 2SC3649S-TD-H explicitly denotes compliance with both Pb-free and halogen-free requirements per JESD204B and IEC 61249-2-21. This is confirmed in the Ordering Information table of the official datasheet (No.2007-3/7), distinguishing it from the "-E" variant which is Pb-free only.

What is the V_CE(sat) specification for the 2SC3649S-TD-H at typical operating conditions?

The 2SC3649S-TD-H exhibits V_CE(sat) = 130–450 mV at I_C = 500 mA and I_B = 50 mA (I_C/I_B = 10), per Electrical Characteristics Table No.2007-2/7. This low saturation voltage directly reduces conduction loss in switching applications, especially at partial load.

Is the 2SC3649S-TD-H pin-compatible with other transistors in the 2SA1419/2SC3649 family?

Yes-all variants including 2SC3649S-TD-E, 2SC3649T-TD-H, and 2SA1419S-TD-H share identical PCP (SOT-89) package dimensions and pinout: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter. The datasheet's Package Dimensions and Electrical Connection diagrams confirm uniform terminal assignment across the family.

What thermal management guidance applies to the 2SC3649S-TD-H in high-power operation?

The 2SC3649S-TD-H achieves 1.5 W collector dissipation only when mounted on a 250 mm² × 0.8 mm ceramic substrate, as specified in Absolute Maximum Ratings. Standard FR-4 PCBs yield significantly lower P_C; thermal design must follow the PC–Ta derating curve in No.2007-4/7 and avoid exceeding 150°C junction temperature under worst-case pulse conditions.

2SC3649S-TD-H Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1.5 A

Voltage - Collector Emitter Breakdown (Max):: 160 V

Vce Saturation (Max) @ Ib, Ic:: 450mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 100mA, 5V

Power - Max:: 500 mW

Frequency - Transition:: 120MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SC3649S-TD-H FAQ

1.How can I place an order for 2SC3649S-TD-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC3649S-TD-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC3649S-TD-H reliable?

The price and inventory of 2SC3649S-TD-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC3649S-TD-H is usually 5 days.

3.What payment methods are accepted for 2SC3649S-TD-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC3649S-TD-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC3649S-TD-H?

2SC3649S-TD-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC3649S-TD-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC3649S-TD-H?

For technical support, including 2SC3649S-TD-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC3649S-TD-H requirements.

6.How does Aetrix verify that 2SC3649S-TD-H is sourced from the original manufacturer or authorized distributors?

All 2SC3649S-TD-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC3649S-TD-H meets industry standards.

7.What is the process for return or replacement of 2SC3649S-TD-H?

All 2SC3649S-TD-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SC3649S-TD-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC3649S-TD-H part is unused and in its original packaging.

Return procedure for 2SC3649S-TD-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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