onsemi 2SC3649T-TD-H

Overview

2SC3649T-TD-H from onsemi is an NPN bipolar junction transistor in PCP (SOT-89) package, rated for −160 V V_CEO, −1.5 A I_C, 500 mW P_C (on ceramic substrate), with low V_CE(sat) of −130 mV at −500 mA/−50 mA drive, and f_T = 120 MHz - used in high-voltage switching power supplies and motor control stages.

For engineers reviewing the 2SC3649T-TD-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO/I_C derating at elevated ambient, h_FE rank T (200–400), Pb-free + halogen-free compliance, and SOT-89 thermal performance on ceramic substrates.

Technical Context

This NPN transistor employs FBET and MBIT processes to achieve high breakdown voltage and low saturation voltage simultaneously. Its design targets stable DC current gain (h_FE = 200–400 at −5 V V_CE, −100 mA I_C) and fast switching (t_on = 40 ns, t_f = 80 ns) under pulsed conditions up to I_CP = −2.5 A.

It operates within a junction temperature range of −55°C to +150°C and requires careful thermal management: maximum 500 mW dissipation on standard PCB, but up to 1.5 W when mounted on a 250 mm² × 0.8 mm ceramic substrate - no heatsink required per spec.

Key Specifications

Pinout & Package

Package: PCP (JEITA/JEDEC SC-62 / SOT-89 / TO-243), ultrasmall surface-mount outline with exposed collector tab for thermal conduction. Dimensions: 4.5 mm × 2.5 mm × 1.6 mm (L×W×H), mass = 0.058 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with 2SC3649T-TD-E, the 2SC3649T-TD-H adds halogen-free certification without trade-offs in performance or reliability; versus MJD127G, it offers superior voltage rating and frequency response but requires SOT-89 layout and tighter thermal design on ceramic substrates.

Availability

2SC3649T-TD-H is available at Aetrix Electronics and suitable for switch-mode power supply design, motor control systems, and industrial sensor interfaces requiring stable component supply, long-term lifecycle assurance, and full environmental compliance.

Supply support for 2SC3649T-TD-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SC3649 belongs to onsemi's high-voltage bipolar transistor product line, engineered for reliable switching and amplification in space-constrained, thermally demanding environments - especially where high V_BR, low V_CE(sat), and small-outline packaging are critical.

FAQ

What is the maximum allowable collector-emitter voltage for the 2SC3649T-TD-H?

The 2SC3649T-TD-H has a guaranteed V_CEO rating of −160 V at T_a = 25°C. This is an absolute maximum stress rating - operation above −160 V risks permanent damage. Derating is required above 25°C ambient; consult the Safe Operating Area (SOA) curves in the official datasheet No.2007 for temperature-dependent limits. The 2SC3649T-TD-H must never be operated beyond this value in any condition.

Does the 2SC3649T-TD-H require a heatsink in standard PCB mounting?

No, the 2SC3649T-TD-H does not require an external heatsink when mounted on a standard FR-4 PCB, as its maximum rated power dissipation is 500 mW under those conditions. However, for operation near full I_C or V_CE, thermal relief pads and copper pour under the collector tab are strongly recommended. On a 250 mm² × 0.8 mm ceramic substrate, it supports up to 1.5 W without a heatsink - the 2SC3649T-TD-H leverages its exposed collector for passive conduction cooling.

What does the "T" in 2SC3649T-TD-H signify?

The "T" in 2SC3649T-TD-H denotes the h_FE gain rank: specifically, h_FE = 200–400 at V_CE = −5 V and I_C = −100 mA. This distinguishes it from "S"-rank (100–200) and "R"-rank (140–280) variants. All 2SC3649T-TD-H units are binned to this tighter gain band, enabling more predictable biasing in production designs without post-manufacture trimming.

How does the 2SC3649T-TD-H differ from the 2SC3649S-TD-H?

The 2SC3649T-TD-H and 2SC3649S-TD-H share identical package, marking, Pb-free/halogen-free compliance, and absolute maximum ratings. Their sole difference is DC current gain: the "T" version guarantees h_FE = 200–400, while the "S" version guarantees h_FE = 100–200. Electrical characteristics like V_CE(sat), f_T, and Cob are identical across both ranks - the 2SC3649T-TD-H is selected when higher and more consistent current amplification is required.

Is the 2SC3649T-TD-H suitable for linear amplifier applications?

Yes, the 2SC3649T-TD-H is suitable for linear amplifier applications such as emitter followers and Class-A stages, thanks to its 120 MHz f_T, low output capacitance (C_ob = 14 pF), and stable h_FE over I_C. However, linear operation demands strict thermal management: its 1.5 W ceramic-substrate rating applies only under pulsed or short-duration conditions. For sustained linear use, derate based on junction temperature limits (T_j ≤ 150°C) and verify SOA compliance - the 2SC3649T-TD-H performs best in moderate-power, high-fidelity analog roles.