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onsemi 2SC3651-OTE-TD-E
- Part No.:
- 2SC3651-OTE-TD-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
2SC3651-OTE-TD-E.pdf
- Description:
- TRANS NPN 100V 0.2A PCP
- Quantity:
- Payment:
- Shipping:
Inventory:103,000
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Product details
Overview
2SC3651-OTE-TD-E from onsemi is an NPN epitaxial planar silicon transistor designed for low-frequency amplifier and driver applications, featuring hFE=500–2000, VCEO≥100V, VCE(sat)≤0.5V at IC=100mA/IB=2mA, VEBO≥15V, and ultrasmall SOT-323 (SC-70) package-used in muting circuits and hybrid ICs requiring high-density layout.
For engineers reviewing the 2SC3651-OTE-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain stability across 10–100mA, low saturation voltage under switching conditions, breakdown margin for 24V rail interfaces, and thermal derating on ceramic substrates.
Technical Context
This general-purpose NPN transistor employs epitaxial planar construction to achieve high hFE consistency and low VCE(sat) at moderate collector currents. Its fT=150MHz supports stable LF amplification up to audio band without unintended RF oscillation.
Designed for operation with base-emitter bias networks driving relay coils or analog switches, it sustains IC=200mA continuous (300mA pulsed) while maintaining V(BR)CEO=100V and junction temperature ≤150°C-enabling use in unregulated 24V industrial signal conditioning stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Withstands 24V system rails with ≥4× safety margin against transient overvoltage. |
| hFE | 500–2000 at IC=10mA - Enables high-gain, single-stage preamplifier design with minimal base drive current. |
| VCE(sat) | 0.15–0.5 V at IC=100mA/IB=2mA - Reduces power loss in muting and analog switch control paths. |
| fT | 150 MHz - Ensures stable small-signal amplification through 20 kHz with adequate phase margin. |
| Cob | 6.5 pF at VCB=10V - Limits Miller effect in common-emitter configurations below 1 MHz. |
| PC | 500 mW (on PCB), 1.3 W (on ceramic board) - Supports thermally constrained hybrid IC mounting without heatsinking. |
Pinout & Package
2SC3651-OTE-TD-E is housed in a SOT-323 (SC-70) surface-mount package: 2.2 mm × 2.2 mm × 0.95 mm, 3-pin, lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Current sink terminal | Connected to ground or low-impedance return path; defines reference for VBE bias and saturation behavior. |
| Base (B) | Control input | Receives current-limited drive (e.g., via 10kΩ resistor); controls IC proportionally per hFE range. |
| Collector (C) | Current source output | Drives load (e.g., relay coil, LED, or next-stage transistor) with VCE swing up to 100V. |
Key Features
| Feature | Design Value |
|---|---|
| High hFE range | 500–2000 enables consistent current amplification across production lots without trim resistors. |
| Low VCE(sat) | ≤0.5V at 100mA reduces conduction loss in always-on muting switches and analog gate drivers. |
| High VEBO | ≥15V allows safe reverse-biasing of base-emitter junction during power sequencing or fault conditions. |
| Ultrasmall footprint | SOT-323 package fits <0.05 cm² board area-critical for space-constrained hybrid amplifier modules. |
Applications
| Audio Muting Circuit | Relay Driver Stage |
|---|---|
Use Scenario: Silent power-up/down in consumer audio equipment by shunting input signal path before amplifier stage. IC Role / Device Role / Timing Role: NPN switch controlling grounded shunt path; activated by microcontroller GPIO. Use Value: VCE(sat)≤0.5V ensures <50mW dissipation at 100mA, preventing audible pop and enabling fast turn-off (toff < 1µs). | Use Scenario: Driving 24V/50mA electromagnetic relay coil in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Low-side switch interfacing MCU logic to inductive load; requires robust VCEO and flyback handling. Use Value: VCEO=100V provides 4× margin over 24V rail, and hFE≥500 ensures full saturation with ≤200µA base drive. |
| Hybrid Amplifier Biasing | Low-Frequency Signal Buffer |
Use Scenario: Fixed-current bias generator in compact hybrid op-amp modules using thick-film substrates. IC Role / Device Role / Timing Role: Constant-current source setting quiescent point for input differential pair. Use Value: Tight hFE distribution (500–2000) and low ICBO (<0.1µA) ensure stable bias current across temperature (–25°C to +75°C). | Use Scenario: Unity-gain buffer isolating DAC output from capacitive loads in test instrumentation. IC Role / Device Role / Timing Role: Emitter-follower configured for low-output-impedance, wide-bandwidth buffering. Use Value: fT=150MHz delivers >10MHz bandwidth at unity gain, and Cob=6.5pF minimizes capacitive loading on sensitive analog nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3904LT1G | VCEO=40V, hFE=100–300, SOT-23 package (larger than SOT-323) | Lower voltage rating limits use to ≤12V systems; reduced gain requires higher base drive. | Choose when cost sensitivity outweighs size and gain requirements in low-voltage designs. |
| BC847BW | VCEO=45V, hFE=200–450, same SOT-323 footprint but lower breakdown and gain | Not suitable for 24V muting or relay drive; acceptable only in ≤15V buffered amplifier stages. | Select only if existing layout uses BC847BW and voltage stress remains <30% of rating. |
Compared with MMBT3904LT1G and BC847BW, the 2SC3651-OTE-TD-E delivers superior voltage margin (100V vs. ≤45V), higher gain (500–2000 vs. ≤450), and identical SOT-323 footprint-making it uniquely suited for compact, 24V-compatible analog switching where thermal density and saturation loss matter.
Availability
2SC3651-OTE-TD-E is available at Aetrix Electronics and suitable for audio muting circuits, relay driver stages, hybrid amplifier biasing, and low-frequency signal buffering requiring stable component supply and long-term industrial availability.
Supply support for 2SC3651-OTE-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The 2SC3651-OTE-TD-E belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable low-frequency amplification and switching in space-constrained, thermally demanding environments.
FAQ
What is the maximum continuous collector current for the 2SC3651-OTE-TD-E?
The 2SC3651-OTE-TD-E supports IC=200 mA continuous at Ta=25°C when mounted on a standard PCB. Derating applies above 25°C ambient; at 75°C, max IC drops to ~120 mA. On a ceramic board (250 mm² × 0.8 mm), power dissipation rises to 1.3 W, permitting higher pulse currents up to 300 mA.
Does the 2SC3651-OTE-TD-E have a guaranteed minimum hFE at high collector current?
Yes-the 2SC3651-OTE-TD-E specifies hFE2 ≥400 at VCE=5V and IC=100 mA, ensuring usable current gain even under switching or driver load conditions. This distinguishes it from many general-purpose transistors whose hFE collapses above 10 mA.
Is the 2SC3651-OTE-TD-E RoHS-compliant and lead-free?
Yes, the 2SC3651-OTE-TD-E is RoHS-compliant and manufactured with lead-free terminations. The SOT-323 package meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), allowing unlimited floor life at ≤30°C/60% RH.
Can the 2SC3651-OTE-TD-E be used in linear amplifier configurations?
Yes-the 2SC3651-OTE-TD-E is characterized for linear operation with specified hFE, fT=150 MHz, and low Cob=6.5 pF. It is commonly deployed in Class-A preamplifier stages and emitter-follower buffers where gain stability and bandwidth up to 10 MHz are required.
What is the marking code for the 2SC3651-OTE-TD-E?
The top-side marking for the 2SC3651-OTE-TD-E is "CG", followed by date code and factory traceability symbols. This matches the official onsemi marking specification for the 2SC3651 family in SOT-323 packaging.
2SC3651-OTE-TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 2mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 500 @ 10mA, 5V
- Power - Max:
- 500 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PCP
2SC3651-OTE-TD-E FAQ
1.How can I place an order for 2SC3651-OTE-TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SC3651-OTE-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SC3651-OTE-TD-E reliable?
The price and inventory of 2SC3651-OTE-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC3651-OTE-TD-E is usually 5 days.
3.What payment methods are accepted for 2SC3651-OTE-TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC3651-OTE-TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SC3651-OTE-TD-E?
2SC3651-OTE-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SC3651-OTE-TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SC3651-OTE-TD-E?
For technical support, including 2SC3651-OTE-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC3651-OTE-TD-E requirements.
6.How does Aetrix verify that 2SC3651-OTE-TD-E is sourced from the original manufacturer or authorized distributors?
All 2SC3651-OTE-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC3651-OTE-TD-E meets industry standards.
7.What is the process for return or replacement of 2SC3651-OTE-TD-E?
All 2SC3651-OTE-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC3651-OTE-TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SC3651-OTE-TD-E part is unused and in its original packaging.
Return procedure for 2SC3651-OTE-TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SC3651-OTE-TD-E Tags
-
MMBT3906LT1G
onsemi
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MMBT3904-7-F
Diodes Incorporated
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MMBT3904LT1G
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MMBT3906-7-F
Diodes Incorporated
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MMBT3904-TP
Micro Commercial Co
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MMBT2222A-7-F
Diodes Incorporated
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BC846BLT1G
onsemi
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BC847B,215
Nexperia USA Inc.
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SMMBT3904LT1G
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MMBT2222A-TP
Micro Commercial Co
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MMBTA06LT1G
onsemi
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MMBT2222ALT1G
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