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onsemi 2SC3651-TD-E
- Part No.:
- 2SC3651-TD-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
2SC3651-TD-E.pdf
- Description:
- 2SC3651 - NPN EPITAXIAL PLANAR S
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
2SC3651-TD-E from onsemi is an NPN epitaxial planar silicon transistor designed for low-frequency general-purpose amplifier and driver applications, featuring hFE=500–2000, VCEO≥100V, VCE(sat)≤0.5V at IC=100mA/IB=2mA, VEBO≥15V, and 500mW power dissipation on standard PCB mounting.
For engineers reviewing the 2SC3651-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain stability across 10–100mA bias, low saturation voltage for efficient switching in muting circuits, high breakdown margins for 24V–48V rail operation, and ultrasmall SOT-323 (SC-70) package compatibility with high-density hybrid IC layouts.
Technical Context
This transistor operates as a linear amplifying or saturated-switching device in low-frequency signal paths. Its high hFE range (500–2000 at VCE=5V, IC=10mA) supports low-base-drive designs, while fT=150MHz ensures adequate bandwidth for audio and control-loop applications up to ~100kHz.
The device uses epitaxial planar construction for consistent parameter distribution and thermal stability. Absolute maximum ratings-VCBO=120V, VCEO=100V, VEBO=15V, IC=200mA continuous-define safe operating area boundaries for both linear and pulse operation (ICP=300mA), with junction temperature limited to 150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Supports operation in 24V–48V systems with ≥2× safety margin against transients. |
| hFE (min/typ/max) | 500 / 1000 / 2000 - Enables stable bias design across production lots without emitter degeneration. |
| VCE(sat) | 0.15–0.5 V @ IC=100mA, IB=2mA - Minimizes conduction loss in muting and driver stages. |
| fT | 150 MHz - Provides usable gain beyond audio band, suitable for feedback amplifiers up to ~100kHz. |
| PC (on PCB) | 500 mW - Allows direct mounting on FR-4 without heatsink for <150mW average dissipation. |
| Cob | 6.5 pF @ VCB=10V - Limits Miller effect in common-emitter configurations below 1MHz. |
Pinout & Package
2SC3651-TD-E is housed in an ultrasmall SOT-323 (SC-70) plastic surface-mount package, measuring 2.2 × 2.2 × 0.95 mm, optimized for high-density hybrid IC assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Current sink terminal | Low-impedance reference node; connects to ground or negative rail in common-emitter configuration. |
| Base (B) | Control input | Receives low-current drive (IB ≈ IC/hFE); requires series resistor to limit base current during saturation. |
| Collector (C) | Current source terminal | Connects to load and positive supply; carries full output current with minimal VCE drop in saturation. |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain | hFE = 500–2000 enables single-stage amplification with low base drive and reduced component count. |
| High breakdown voltage | VCEO ≥ 100V allows use in industrial 24V/48V control interfaces without external clamping. |
| Low saturation voltage | VCE(sat) ≤ 0.5V at IC=100mA minimizes power loss and self-heating in muting and switching drivers. |
| Ultrasmall footprint | SOT-323 package (2.2 × 2.2 mm) supports >2× higher component density vs. SOT-23 in hybrid amplifier modules. |
Applications
| Audio Muting Circuit | Low-Voltage Driver Stage |
|---|---|
Use Scenario: Signal path interruption in analog audio line outputs to prevent pop/click during power-up or channel switching. IC Role / Device Role / Timing Role: NPN switch operating in saturation/cutoff mode controlled by microcontroller GPIO. Use Value: VCE(sat) ≤ 0.5V ensures <5mW dissipation at 10mA load current, eliminating need for heat spreading. | Use Scenario: Driving relay coils or LED arrays from 3.3V/5V logic outputs in industrial I/O modules. IC Role / Device Role / Timing Role: General-purpose NPN interface transistor providing current gain and level translation. Use Value: hFE ≥ 500 allows 100mA collector current with only 200µA base drive, easing MCU GPIO loading. |
| LF Amplifier Stage | Hybrid IC Bias Element |
Use Scenario: First-stage preamplifier in battery-powered sensor signal conditioning with 20–20kHz bandwidth. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with fixed-bias or emitter-degenerated topology. Use Value: fT = 150MHz provides >30dB gain margin at 100kHz, ensuring stable closed-loop performance. | Use Scenario: Embedded biasing element in multi-transistor hybrid amplifier modules requiring compact layout. IC Role / Device Role / Timing Role: Precision DC current source or active load within monolithic hybrid substrate. Use Value: Ultrasmall SOT-323 footprint enables placement adjacent to matched transistor pairs without trace routing congestion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BW | VCEO=45V, hFE=110–800, SOT-323 package | Limited to ≤24V systems; lower hFE reduces base drive margin in high-gain stages. | Choose when cost sensitivity outweighs voltage/headroom requirements and gain consistency is less critical. |
| MMBT3904LT1G | VCEO=40V, hFE=100–300, SOT-23 package | Lower breakdown and gain; larger SOT-23 footprint increases board area vs. SOT-323. | Select for legacy SOT-23 footprints where space constraints allow and 40V rating suffices. |
Compared with BC847BW and MMBT3904LT1G, the 2SC3651-TD-E delivers superior voltage headroom (100V), wider hFE range (500–2000), and smaller footprint-making it uniquely suited for compact, high-reliability LF amplifier and muting circuits in 24–48V industrial equipment.
Availability
2SC3651-TD-E is available at Aetrix Electronics and suitable for audio muting circuits, low-voltage driver stages, LF amplifier stages, and hybrid IC bias elements requiring stable component supply and long-term manufacturability.
Supply support for 2SC3651-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The 2SC3651-TD-E belongs to onsemi's general-purpose bipolar transistor product line, engineered specifically for reliable low-frequency amplification, switching, and driver functions in space-constrained industrial and audio systems.
FAQ
What is the maximum continuous collector current for the 2SC3651-TD-E?
The 2SC3651-TD-E supports a maximum continuous collector current (IC) of 200 mA at Ta = 25°C when mounted on a standard PCB. At elevated ambient temperatures or under pulse conditions, it can handle up to 300 mA (ICP) with appropriate duty cycle control. Derating is required above 25°C per the PC–Ta curve in the datasheet.
Does the 2SC3651-TD-E have a guaranteed minimum hFE value?
Yes, the 2SC3651-TD-E guarantees hFE ≥ 500 at VCE = 5 V and IC = 10 mA, with typical values around 1000 and maximum up to 2000. This wide hFE range is specified across production lots and supports robust bias design without emitter resistors in many applications.
What package type is used for the 2SC3651-TD-E?
The 2SC3651-TD-E uses the SOT-323 (SC-70) surface-mount plastic package, measuring 2.2 mm × 2.2 mm × 0.95 mm. This ultrasmall outline enables high-density placement in hybrid ICs and space-limited PCBs, distinguishing it from larger alternatives like SOT-23.
Can the 2SC3651-TD-E be used in switching applications?
Yes, the 2SC3651-TD-E is suitable for low-frequency switching applications such as audio muting and relay driving due to its low VCE(sat) ≤ 0.5 V at IC = 100 mA / IB = 2 mA and fast turn-on/turn-off characteristics supported by fT = 150 MHz.
What is the absolute maximum emitter-to-base voltage for the 2SC3651-TD-E?
The absolute maximum emitter-to-base voltage (VEBO) for the 2SC3651-TD-E is 15 V, verified per the datasheet's Absolute Maximum Ratings table. This rating applies at Ta = 25°C and defines the reverse-biased base-emitter junction limit before potential degradation.
2SC3651-TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- *
- Package/Case:
- TO-243AA
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 2mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 500 @ 10mA, 5V
- Power - Max:
- -
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PCP
2SC3651-TD-E FAQ
1.How can I place an order for 2SC3651-TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SC3651-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SC3651-TD-E reliable?
The price and inventory of 2SC3651-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC3651-TD-E is usually 5 days.
3.What payment methods are accepted for 2SC3651-TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC3651-TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SC3651-TD-E?
2SC3651-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SC3651-TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SC3651-TD-E?
For technical support, including 2SC3651-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC3651-TD-E requirements.
6.How does Aetrix verify that 2SC3651-TD-E is sourced from the original manufacturer or authorized distributors?
All 2SC3651-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC3651-TD-E meets industry standards.
7.What is the process for return or replacement of 2SC3651-TD-E?
All 2SC3651-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC3651-TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SC3651-TD-E part is unused and in its original packaging.
Return procedure for 2SC3651-TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SC3651-TD-E Tags
-
MMBT3906LT1G
onsemi
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MMBT3904-7-F
Diodes Incorporated
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MMBT3904LT1G
onsemi
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MMBT3906-7-F
Diodes Incorporated
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MMBT3904-TP
Micro Commercial Co
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MMBT2222A-7-F
Diodes Incorporated
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BC846BLT1G
onsemi
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BC847B,215
Nexperia USA Inc.
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SMMBT3904LT1G
onsemi
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MMBT2222A-TP
Micro Commercial Co
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MMBTA06LT1G
onsemi
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MMBT2222ALT1G
onsemi
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