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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Renesas 2SC3736-T1-AZ

Name: 2SC3736-T1-AZ
Brand: Renesas
SKU: 2SC3736-T1-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC3736-T1-AZ

Manufacturer:: Renesas

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SC3736-T1-AZ.pdf

Description:: TRANS NPN 45V 1A SC-62

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC3736-T1-AZ from Renesas Electronics is an NPN silicon epitaxial transistor designed for high-speed switching and power amplifier applications, featuring V_CEO = 45 V, I_C(DC) = 1.0 A, P_T = 2.0 W, f_T = 300–380 MHz, and V_CE(sat) ≤ 0.4 V at I_C = 500 mA / I_B = 50 mA - used in DC-DC converter primary-side switches and audio output stages.

For engineers reviewing the 2SC3736-T1-AZ datasheet, 2SC3736-T1-AZ pinout, 2SC3736-T1-AZ application, or 2SC3736-T1-AZ equivalent, key selection criteria include safe operating area under pulsed conditions (I_C(pulse) = 2.0 A), low saturation voltage for efficiency-critical switching, complementary pairing with 2SA1460, and ceramic-substrate thermal mounting requirements.

Technical Context

This discrete NPN bipolar junction transistor employs epitaxial base construction to achieve high f_T and fast switching performance. Its design targets linear amplification and saturated-switching modes, with specified h_FE ranges of 60–120 (OL) and 100–200 (OK) at I_C = 50 mA, and minimum h_FE = 60 maintained up to I_C = 500 mA.

The device operates within a junction temperature limit of 150°C and requires mounting on a 16 cm² × 0.7 mm ceramic substrate for rated power dissipation. Switching timing parameters - t_on ≤ 40 ns, t_stg ≤ 80 ns, t_off ≤ 100 ns - are characterized under pulsed conditions (PW ≤ 350 µs, duty ≤ 2%), confirming suitability for medium-frequency hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 V - Maximum collector-emitter voltage before breakdown in common-emitter configuration; defines safe voltage headroom in switching applications.
I_C(DC)	1.0 A - Continuous DC collector current rating; sets baseline current-handling capability for linear or switching use.
P_T	2.0 W - Total power dissipation when mounted on specified 16 cm² ceramic substrate; determines thermal design constraints.
f_T	300–380 MHz - Gain-bandwidth product at V_CE = 10 V, I_E = −100 mA; indicates usable frequency range for RF or high-speed switching.
V_CE(sat)	0.17–0.4 V - Collector-emitter saturation voltage at I_C = 500 mA / I_B = 50 mA; directly impacts conduction loss and efficiency.
t_off	72–100 ns - Turn-off time under defined test conditions; critical for minimizing switching losses in PWM circuits.
C_ob	6.7–10 pF - Output capacitance at V_CB = 10 V; influences high-frequency gain roll-off and snubber design.

Pinout & Package

2SC3736-T1-AZ is housed in a Power Mini Mold (PMM) package with gull-wing surface-mount leads. The package measures 4.5 ±0.1 mm × 3.0 mm (typ.) × 1.6 ±0.2 mm height, with a metalized collector tab (Pin 2) serving as both electrical terminal and thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Main current exit path; connected to ground or low-side reference in common-emitter configurations.
2	Collector (Fin)	High-current input terminal with exposed metal tab; must be thermally coupled to PCB copper or heatsink.
3	Base	Control electrode; requires current-limited drive (e.g., 50 mA base drive for 500 mA collector switching).

Key Features

Feature	Design Value
High-speed switching	Turn-off time ≤ 100 ns enables operation up to ~1–2 MHz in hard-switched converters without excessive loss.
Low V_CE(sat)	≤ 0.4 V at rated I_C reduces conduction loss by >30% vs. general-purpose transistors with V_CE(sat) > 0.6 V.
Complementary pairing	Designed as NPN counterpart to 2SA1460 PNP, enabling matched push-pull or H-bridge output stages.
Epitaxial base structure	Enables stable h_FE ≥ 60 up to I_C = 500 mA, supporting predictable gain in amplifier and switch-driver designs.

Applications

Audio Power Amplifier Output Stage	DC-DC Converter Primary Switch
Use Scenario: Driving 4–8 Ω speaker loads in Class AB audio amplifiers with <1% THD+N at 1 W output. IC Role / Device Role / Timing Role: NPN output transistor in complementary emitter-follower configuration, delivering peak currents >800 mA. Use Value: Low V_CE(sat) minimizes crossover distortion and improves thermal stability during sustained output.	Use Scenario: High-side switching in 24 V input, 5 V/2 A isolated flyback converter operating at 250 kHz. IC Role / Device Role / Timing Role: Saturated-switch BJT controlling primary winding current; driven by transformer-coupled base pulse. Use Value: Fast t_off ≤ 100 ns limits dead-time loss; 45 V V_CEO provides margin against reflected voltage spikes.
Motor Driver Half-Bridge Leg	Industrial Relay Driver Interface
Use Scenario: Controlling 12 V, 800 mA brushed DC motor in programmable logic controller (PLC) output module. IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology, sinking motor current during active periods. Use Value: 2.0 W power rating supports continuous 1 A pulses; h_FE ≥ 60 ensures reliable saturation with 10 mA base drive.	Use Scenario: Direct-driving 24 V, 400 mW electromagnetic relay coil in industrial control panel I/O card. IC Role / Device Role / Timing Role: Single-transistor interface between microcontroller GPIO and relay coil, providing galvanic isolation via optocoupler input stage. Use Value: V_CEO = 45 V exceeds 24 V supply + 100% surge margin; low V_CE(sat) prevents coil underdrive during brownout.

Audio Power Amplifier Output Stage

DC-DC Converter Primary Switch

Use Scenario: Driving 4–8 Ω speaker loads in Class AB audio amplifiers with <1% THD+N at 1 W output.

IC Role / Device Role / Timing Role: NPN output transistor in complementary emitter-follower configuration, delivering peak currents >800 mA.

Use Value: Low V_CE(sat) minimizes crossover distortion and improves thermal stability during sustained output.

Use Scenario: High-side switching in 24 V input, 5 V/2 A isolated flyback converter operating at 250 kHz.

IC Role / Device Role / Timing Role: Saturated-switch BJT controlling primary winding current; driven by transformer-coupled base pulse.

Use Value: Fast t_off ≤ 100 ns limits dead-time loss; 45 V V_CEO provides margin against reflected voltage spikes.

Motor Driver Half-Bridge Leg

Industrial Relay Driver Interface

Use Scenario: Controlling 12 V, 800 mA brushed DC motor in programmable logic controller (PLC) output module.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology, sinking motor current during active periods.

Use Value: 2.0 W power rating supports continuous 1 A pulses; h_FE ≥ 60 ensures reliable saturation with 10 mA base drive.

Use Scenario: Direct-driving 24 V, 400 mW electromagnetic relay coil in industrial control panel I/O card.

IC Role / Device Role / Timing Role: Single-transistor interface between microcontroller GPIO and relay coil, providing galvanic isolation via optocoupler input stage.

Use Value: V_CEO = 45 V exceeds 24 V supply + 100% surge margin; low V_CE(sat) prevents coil underdrive during brownout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-speed switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC4116-T1-AZ	V_CEO = 60 V, I_C(DC) = 1.5 A, f_T = 250 MHz - higher voltage/current but lower bandwidth.	Better suited for 48 V bus switching where voltage margin is critical; less optimal for >1 MHz signal amplification.	Select when V_CEO > 45 V is required and switching speed < 300 MHz is acceptable.
MJD112G	V_CEO = 100 V, I_C(DC) = 2.0 A, P_T = 15 W - TO-252 package, higher power, slower switching (t_off ≈ 300 ns).	Used in higher-power industrial motor drives; incompatible footprint and thermal interface vs. PMM package.	Choose for higher-current, lower-frequency applications requiring TO-252 mechanical robustness and thermal mass.

Compared with 2SC4116-T1-AZ and MJD112G, the 2SC3736-T1-AZ offers superior high-frequency response and compact PMM packaging for space-constrained board layouts, while trading off absolute voltage and current ratings - making it optimal for sub-1 MHz switching and mid-power analog amplification where size and speed are prioritized.

Availability

2SC3736-T1-AZ is available at Aetrix Electronics and suitable for audio power amplifiers, DC-DC converter primary switches, and industrial relay driver interfaces requiring stable component supply, consistent parametric binning (OL/OK h_FE grades), and long-term obsolescence management.

Supply support for 2SC3736-T1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and discrete devices.

The 2SC3736-T1-AZ belongs to Renesas' legacy silicon bipolar transistor product line, engineered for cost-effective, high-reliability switching and amplification in standard-grade industrial and consumer equipment.

FAQ

What is the maximum continuous collector current rating for the 2SC3736-T1-AZ?

The 2SC3736-T1-AZ has a maximum DC collector current rating (I_C(DC)) of 1.0 A at T_A = 25°C, provided it is mounted on the specified 16 cm² ceramic substrate. At elevated ambient temperatures or with reduced heatsinking, derating applies per the Safe Operating Area curve in the D17148EJ3V0DS datasheet. Exceeding this rating risks thermal runaway or permanent degradation of the 2SC3736-T1-AZ.

Does the 2SC3736-T1-AZ have a complementary PNP transistor?

Yes, the 2SC3736-T1-AZ is explicitly designed as the NPN complement to the 2SA1460 PNP transistor. Both share matched voltage ratings, current capabilities, and thermal characteristics, enabling balanced push-pull, totem-pole, or H-bridge output stages. This pairing is documented in the original Renesas (formerly NEC) datasheet D17148EJ3V0DS for the 2SC3736-T1-AZ.

What is the typical gain-bandwidth product (f_T) of the 2SC3736-T1-AZ?

According to the official Renesas datasheet D17148EJ3V0DS, the 2SC3736-T1-AZ exhibits a gain-bandwidth product (f_T) of 300–380 MHz under test conditions of V_CE = 10 V and I_E = −100 mA. This high f_T confirms its suitability for RF amplification and fast-switching applications up to several hundred MHz, distinguishing the 2SC3736-T1-AZ from general-purpose BJTs with f_T < 100 MHz.

Can the 2SC3736-T1-AZ be used in surface-mount reflow processes?

Yes, the 2SC3736-T1-AZ uses a Power Mini Mold (PMM) package with gull-wing leads compatible with standard lead-free reflow soldering profiles (per J-STD-020). Peak temperature must not exceed 260°C for ≤ 10 seconds, and thermal profile must avoid rapid ramp rates that induce mechanical stress on the molded body. The metalized collector tab (Pin 2) requires adequate stencil aperture and solder paste volume to ensure reliable thermal and electrical connection - critical for proper operation of the 2SC3736-T1-AZ.

What quality grade is assigned to the 2SC3736-T1-AZ?

The 2SC3736-T1-AZ is classified as a "Standard" quality grade device per Renesas' product categorization, intended for applications including office equipment, communications gear, audio/video systems, home appliances, and industrial robots. It is not qualified for automotive ("High Quality") or life-support/aerospace ("Specific") use unless separately validated and approved in writing by Renesas - a requirement that applies to all variants of the 2SC3736-T1-AZ.

2SC3736-T1-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-243AA

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 500nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 500mA, 10V

Power - Max:: 2 W

Frequency - Transition:: 380MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-62

2SC3736-T1-AZ FAQ

1.How can I place an order for 2SC3736-T1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC3736-T1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC3736-T1-AZ reliable?

The price and inventory of 2SC3736-T1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC3736-T1-AZ is usually 5 days.

3.What payment methods are accepted for 2SC3736-T1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC3736-T1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC3736-T1-AZ?

2SC3736-T1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC3736-T1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC3736-T1-AZ?

For technical support, including 2SC3736-T1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC3736-T1-AZ requirements.

6.How does Aetrix verify that 2SC3736-T1-AZ is sourced from the original manufacturer or authorized distributors?

All 2SC3736-T1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC3736-T1-AZ meets industry standards.

7.What is the process for return or replacement of 2SC3736-T1-AZ?

All 2SC3736-T1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SC3736-T1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC3736-T1-AZ part is unused and in its original packaging.

Return procedure for 2SC3736-T1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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