onsemi 2SC3752M-CB11

Overview

2SC3752M-CB11 from SANYO is an NPN triple diffused planar silicon transistor designed for high-voltage switching regulator applications, featuring 800 V V_CEO, 3 A I_C, 30 W P_C at T_c = 25 °C, and TO-220ML micaless package. It delivers high-speed switching, wide active safe operating area (ASO), and MBIT process reliability in offline SMPS primary-side switch roles.

For engineers reviewing the 2SC3752M-CB11 datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin for 400 V DC bus designs, h_FE rank consistency (L/M/K), switching time performance under 50 µs, and thermal derating behavior above 25 °C ambient.

Technical Context

This device operates as a single NPN bipolar junction transistor optimized for hard-switched flyback and forward converter topologies. Its 800 V V_CEO rating supports universal AC input (85–265 VAC) with sufficient margin over 400 V DC link transients, while its 3 A continuous collector current and 10 A pulsed rating accommodate peak load conditions.

The MBIT (Metal Bonding Integrated Technology) process enables robust secondary breakdown immunity and stable h_FE across temperature (–40 to +120 °C). The micaless TO-220ML package reduces thermal resistance and simplifies heatsink mounting without insulating washers, supporting reliable conduction at T_j ≤ 150 °C.

Key Specifications

Pinout & Package

2SC3752M-CB11 is housed in a TO-220ML (micaless) package with standard lead frame geometry and no electrically insulating mica washer-enabling direct metal-to-heatsink contact for improved thermal transfer. Mounting hole center-to-center distance is 14.0 mm; body width is 10.0 mm; total height is 18.1 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with 2SC3752M-CB12 and 2SC3752M-CB13, the 2SC3752M-CB11 offers mid-range h_FE (200–400), balancing base drive simplicity, thermal margin, and production yield-making it optimal for industrial-grade 50–150 W SMPS where consistent turn-on behavior and moderate drive overhead are required.

Availability

2SC3752M-CB11 is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial SMPS modules, LED driver power stages, and UPS inverter pre-regulators requiring stable component supply and long-term lifecycle support.

Supply support for 2SC3752M-CB11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2011; known for high-reliability discrete transistors and ruggedized packaging.

The 2SC3752 series belongs to SANYO's high-voltage bipolar transistor product line, engineered specifically for offline switching power supplies demanding robust SOA, high breakdown, and thermal resilience in harsh ambient conditions.

FAQ

What is the maximum allowable junction temperature for the 2SC3752M-CB11?

The 2SC3752M-CB11 has a maximum junction temperature (T_j) of 150 °C as specified in its Absolute Maximum Ratings table. Operation beyond this limit risks permanent degradation of h_FE, increased leakage current, and accelerated parametric shift. Derating curves in the datasheet show that at T_c = 100 °C, the device must be operated below 12 W to maintain T_j ≤ 150 °C. Thermal design must account for R_θJC and heatsink interface resistance to ensure compliance.

Does the 2SC3752M-CB11 support avalanche energy rating?

No, the 2SC3752M-CB11 datasheet does not specify an avalanche energy (E_AS) rating. It is characterized for forward-bias and reverse-bias SOA but lacks defined unclamped inductive switching (UIS) capability. Designers must implement external clamping (e.g., RCD snubbers or TVS diodes) to limit V_CE overshoot during inductive turn-off. Relying on inherent avalanche tolerance is unsafe-this device is not rated for repetitive or single-pulse avalanche operation.

How does the h_FE rank affect base resistor selection for the 2SC3752M-CB11?

The 2SC3752M-CB11 carries h_FE1 rank M, meaning its DC current gain ranges from 200 to 400 at I_C = 0.2 A and V_CE = 5 V. To ensure saturation across this range, the base resistor must deliver I_B ≥ I_C/100 (for worst-case h_FE = 200). For 3 A I_C, minimum I_B = 30 mA; with 5 V drive, R_B ≤ 167 Ω. Using I_B/I_C = 1/10 avoids deep saturation while maintaining low V_CE(sat).

Can the 2SC3752M-CB11 be used in linear regulator applications?

No-the 2SC3752M-CB11 is not intended for linear regulation. Its SOA is optimized for switching operation with short-duration current/voltage overlap, not continuous dissipation. At 25 °C ambient, its maximum linear power dissipation is limited to ~3 W due to thermal constraints, far below its 30 W pulsed rating. Linear use risks secondary breakdown, especially above V_CE > 100 V. It should only be applied in switching topologies with controlled duty cycle and proper snubbing.

Is the TO-220ML package of the 2SC3752M-CB11 electrically insulated from the heatsink?

No-the TO-220ML package used in the 2SC3752M-CB11 is micaless, meaning the collector (pin 2) is directly connected to the metal tab and thus electrically common with the heatsink. This requires the heatsink to be isolated from system ground unless the collector node is at ground potential. If isolation is needed, a separate insulating pad or alternative package (e.g., TO-3P) must be selected-2SC3752M-CB11 does not provide internal electrical isolation.