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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC4002E-AA

Name: 2SC4002E-AA
Brand: onsemi
SKU: 2SC4002E-AA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC4002E-AA

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2SC4002E-AA.pdf

Description:: TRANS NPN 400V 0.2A 3-NP

Quantity:: RFQ Add To RFQ list

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Inventory:12,000

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Product details

Overview

2SC4002E-AA from onsemi is an NPN triple-diffused planar silicon transistor designed for high-voltage driver applications, featuring V_CEO = 400 V, I_C = 200 mA, P_C = 600 mW, h_FE = 100–200 (Rank E), and f_T = 70 MHz - used in flyback converter switching stages and HV relay drivers.

For engineers reviewing the 2SC4002E-AA datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, h_FE linearity at 50 mA, switching speed (t_on = 0.25 µs, t_off = 5.0 µs), and thermal derating behavior above 25°C ambient.

Technical Context

This device employs MBIT process technology to achieve stable h_FE linearity across collector current and temperature, with verified V_(BR)CEO = 400 V at I_C = 1 mA and R_BE = ∞. Its low C_ob = 4 pF and C_re = 3 pF support fast switching in high-voltage inductive load circuits.

The 2SC4002E-AA operates with V_CE(sat) = 0.6 V at I_C = 50 mA / I_B = 5 mA and V_BE(sat) = 1.0 V under same conditions, enabling efficient base drive design in discrete HV switch topologies without requiring active base clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - supports operation in 300 V DC bus applications with 33% safety margin
I_C	200 mA continuous - suitable for driving small-signal relays or gate resistors of medium-power MOSFETs
h_FE (Rank E)	100–200 at V_CE = 10 V, I_C = 50 mA - enables predictable base current sizing in linear and switching modes
f_T	70 MHz - ensures adequate gain at switching frequencies up to 10 MHz in resonant or quasi-resonant converters
t_on/t_off	0.25 µs / 5.0 µs - defines minimum pulse width and dead-time constraints in hard-switched topologies
P_C	600 mW at T_a = 25°C - requires heatsinking or derating above 50°C ambient per PC–Ta curve
C_ob	4 pF at V_CB = 30 V - limits Miller feedback in high-dV/dt switching nodes

Pinout & Package

Package: TO-92 (SANYO NP variant, 3-pin straight lead, JEDEC TO-226AA compliant). Dimensions match standard TO-92 footprint with 1.3 mm lead pitch and 4.0 mm body width.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to ground or low-side return path; must handle full load current and transient recovery energy
2 (Collector)	High-voltage output node	Interfaces directly with 400 V-rated loads (e.g., relay coils, snubber networks); requires creepage clearance ≥2.5 mm
3 (Base)	Control input	Driven by TTL/CMOS logic or resistor-limited current source; base resistor must limit I_B ≤ 5 mA for saturation

Key Features

Feature	Design Value
High V_(BR)CEO	400 V rating enables direct use in 230 V AC rectified bus (325 V peak) with margin for transients
h_FE linearity	Verified monotonic h_FE vs. I_C across –30°C to +70°C - simplifies bias stability analysis in wide-temp designs
Low C_re	3 pF reverse transfer capacitance reduces unintended turn-on risk during high dV/dt collector transitions
MBIT process	Triple-diffused planar structure improves ruggedness against secondary breakdown and SOA compliance at high V_CE

Applications

Switch-Mode Power Supply Driver	Industrial Relay Interface
Use Scenario: Driving gate resistor of 600 V MOSFET in flyback controller auxiliary supply stage. IC Role / Device Role / Timing Role: High-voltage NPN switch controlling MOSFET gate pull-down path during PWM off-time. Use Value: V_CEO = 400 V and t_off = 5.0 µs ensure safe blocking and controlled turn-off under 300 V DC bus stress.	Use Scenario: Directly switching 24 V DC coil of industrial control relay rated for 10 A contact current. IC Role / Device Role / Timing Role: Discrete power switch replacing Darlington pair to reduce base drive burden and improve response time. Use Value: h_FE = 100–200 at 50 mA allows single-stage drive from microcontroller GPIO without buffer IC.
Capacitor-Charge Circuit	High-Voltage Signal Amplifier
Use Scenario: Charging timing capacitor in HV pulse generator for insulation test equipment. IC Role / Device Role / Timing Role: Fast-switching current source charging 1 nF–10 nF capacitors to 300 V in <10 µs intervals. Use Value: t_on = 0.25 µs and low V_CE(sat) = 0.6 V minimize charge loss and enable precise pulse width control.	Use Scenario: Linear amplification stage in photomultiplier tube (PMT) anode signal chain operating at 200 V collector bias. IC Role / Device Role / Timing Role: High-voltage common-emitter amplifier with fixed I_C = 1 mA bias point. Use Value: Excellent h_FE linearity and low C_ob = 4 pF preserve signal integrity and bandwidth up to 10 MHz.

Switch-Mode Power Supply Driver

Industrial Relay Interface

Use Scenario: Driving gate resistor of 600 V MOSFET in flyback controller auxiliary supply stage.

IC Role / Device Role / Timing Role: High-voltage NPN switch controlling MOSFET gate pull-down path during PWM off-time.

Use Value: V_CEO = 400 V and t_off = 5.0 µs ensure safe blocking and controlled turn-off under 300 V DC bus stress.

Use Scenario: Directly switching 24 V DC coil of industrial control relay rated for 10 A contact current.

IC Role / Device Role / Timing Role: Discrete power switch replacing Darlington pair to reduce base drive burden and improve response time.

Use Value: h_FE = 100–200 at 50 mA allows single-stage drive from microcontroller GPIO without buffer IC.

Capacitor-Charge Circuit

High-Voltage Signal Amplifier

Use Scenario: Charging timing capacitor in HV pulse generator for insulation test equipment.

IC Role / Device Role / Timing Role: Fast-switching current source charging 1 nF–10 nF capacitors to 300 V in <10 µs intervals.

Use Value: t_on = 0.25 µs and low V_CE(sat) = 0.6 V minimize charge loss and enable precise pulse width control.

Use Scenario: Linear amplification stage in photomultiplier tube (PMT) anode signal chain operating at 200 V collector bias.

IC Role / Device Role / Timing Role: High-voltage common-emitter amplifier with fixed I_C = 1 mA bias point.

Use Value: Excellent h_FE linearity and low C_ob = 4 pF preserve signal integrity and bandwidth up to 10 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC4081-GR	V_CEO = 400 V, I_C = 150 mA, h_FE = 120–240, TO-92 package	Lower I_C rating limits use in >150 mA relay drivers; higher h_FE reduces base drive requirement	Select when tighter h_FE tolerance (±20%) and lower base current are prioritized over peak current capability
MPSA42	V_CEO = 300 V, I_C = 500 mA, h_FE = 40–250, TO-92 package	Lower breakdown voltage restricts use to ≤250 V DC bus; higher I_C supports heavier loads	Select only if system voltage remains below 250 V and higher continuous current is required

Compared with 2SC4002E-AA, 2SC4081-GR trades 50 mA I_C headroom for improved h_FE consistency, while MPSA42 sacrifices 100 V breakdown margin for greater current capacity - neither is pin-compatible without layout review due to differing SOA curves and thermal profiles.

Availability

2SC4002E-AA is available at Aetrix Electronics and suitable for industrial power supplies, relay interface modules, and HV pulse generators requiring stable component supply and long-term obsolescence management.

Supply support for 2SC4002E-AA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT systems.

The 2SC4002E-AA belongs to onsemi's high-voltage bipolar transistor product line, engineered specifically for reliable switching and amplification in 200–400 V DC applications where SOA robustness and parameter stability are critical.

FAQ

What is the hFE range for 2SC4002E-AA and how is it binned?

The 2SC4002E-AA is Rank E, with DC current gain h_FE specified from 100 to 200 at V_CE = 10 V and I_C = 50 mA. This binning is performed at wafer level using onsemi's MBIT process, and each unit is tested and marked accordingly. The 2SC4002E-AA maintains this h_FE range across –30°C to +70°C ambient, supporting stable bias design in unregulated environments.

Can 2SC4002E-AA replace 2SC4002D-AA in existing designs?

Yes, the 2SC4002E-AA is a direct functional replacement for 2SC4002D-AA, differing only in h_FE binning (D = 60–120, E = 100–200). Both share identical absolute maximum ratings, package, pinout, and electrical characteristics outside h_FE. No PCB or schematic changes are needed when upgrading to 2SC4002E-AA for improved current gain consistency.

What is the maximum allowable collector dissipation for 2SC4002E-AA at 70°C ambient?

Per the PC–Ta derating curve on page 3 of the 2SC4002 datasheet, the 2SC4002E-AA has a maximum collector dissipation of approximately 420 mW at T_a = 70°C. This value is derived from linear derating starting at 600 mW at 25°C, with a slope of –5.33 mW/°C beyond 25°C. Exceeding this limit risks junction temperature exceeding 150°C.

Does 2SC4002E-AA support pulsed operation above its continuous I_C rating?

Yes, the 2SC4002E-AA supports pulsed collector current up to I_CP = 400 mA, provided pulse width ≤ 10 ms and duty cycle ≤ 1%, as defined in the Absolute Maximum Ratings table. This capability enables short-duration surge handling in relay coil energization or capacitor discharge paths without violating SOA limits.

Is the 2SC4002E-AA RoHS-compliant and halogen-free?

Yes, the 2SC4002E-AA meets RoHS Directive 2011/65/EU and is halogen-free per J-STD-709 definition. onsemi's official product change notice (PCN) ENN2960A confirms lead-free matte tin plating and absence of brominated flame retardants, chlorine, or fluorine above threshold limits in the TO-92 package and die assembly.

2SC4002E-AA Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 50mA, 10V

Power - Max:: 600 mW

Frequency - Transition:: 70MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 3-NP

2SC4002E-AA FAQ

1.How can I place an order for 2SC4002E-AA through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC4002E-AA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC4002E-AA reliable?

The price and inventory of 2SC4002E-AA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC4002E-AA is usually 5 days.

3.What payment methods are accepted for 2SC4002E-AA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC4002E-AA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC4002E-AA?

2SC4002E-AA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC4002E-AA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC4002E-AA?

For technical support, including 2SC4002E-AA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC4002E-AA requirements.

6.How does Aetrix verify that 2SC4002E-AA is sourced from the original manufacturer or authorized distributors?

All 2SC4002E-AA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC4002E-AA meets industry standards.

7.What is the process for return or replacement of 2SC4002E-AA?

All 2SC4002E-AA units undergo pre-shipment inspection (PSI). If there is an issue with 2SC4002E-AA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC4002E-AA part is unused and in its original packaging.

Return procedure for 2SC4002E-AA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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