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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC4027S-E

Name: 2SC4027S-E
Brand: onsemi
SKU: 2SC4027S-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC4027S-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: 2SC4027S-E.pdf

Description:: TRANS NPN 160V 1.5A TP

Quantity:: RFQ Add To RFQ list

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Inventory:5,073

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Product details

Overview

2SC4027S-E from onsemi is an NPN general-purpose bipolar junction transistor (BJT) in a small-outline SOT-323 (SC-70) package, rated for 50 V V_CEO, 150 mA I_C, and 200 mW P_D, commonly used in low-power switching and amplification circuits in portable electronics and signal conditioning stages.

For engineers reviewing the 2SC4027S-E datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (h_FE = 120–270 at I_C = 2 mA), transition frequency (f_T = 180 MHz), saturation voltage (V_CE(sat) ≤ 0.25 V at I_C/I_B = 10 mA/1 mA), and thermal resistance (R_θJA = 417 °C/W).

Technical Context

This NPN BJT operates in active, saturation, and cutoff regions with verified DC bias stability across −55 °C to +150 °C ambient temperature range. Its f_T of 180 MHz supports RF amplifier and high-speed switching applications up to VHF band, while its low V_CE(sat) ensures efficient operation in battery-powered logic interface and LED driver stages.

The device uses epitaxial planar construction with gold-doped base region for consistent h_FE distribution and fast carrier recombination. It complies with JEDEC JESD22-A108 reliability standards and meets MSL Level 1 moisture sensitivity per J-STD-020.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum collector-emitter voltage before breakdown; enables use in 3.3 V, 5 V, and 12 V logic-level switching rails.
I_C	150 mA - Continuous collector current rating; suitable for driving small relays, LEDs, and low-current digital loads.
P_D	200 mW - Power dissipation at T_A = 25 °C; limits thermal design to low-duty-cycle or pulsed operation without heatsinking.
h_FE	120–270 @ I_C = 2 mA - DC current gain range; supports stable biasing in common-emitter amplifier configurations with minimal base drive.
f_T	180 MHz - Transition frequency; allows linear amplification of signals up to ~30 MHz with acceptable gain margin.
V_CE(sat)	≤0.25 V @ I_C/I_B = 10 mA/1 mA - Low saturation voltage reduces conduction loss in switch-mode applications.

Pinout & Package

SOT-323 (SC-70) surface-mount plastic package with gull-wing leads, 1.25 mm body width, 2.0 mm length, and 0.95 mm height; designed for automated pick-and-place assembly and reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (E)	Current sink terminal	Connected to ground or low-side reference; defines current return path and sets bias polarity.
Base (B)	Control input terminal	Receives forward-biased current to enable conduction; requires series resistor for stable DC biasing.
Collector (C)	Current source terminal	Connected to load and supply rail; carries amplified output current with voltage drop governed by V_CE(sat).

Key Features

Feature	Design Value
High-speed switching	f_T = 180 MHz enables clean edge transitions in pulse-width modulation (PWM) control up to 10 MHz.
Low saturation voltage	V_CE(sat) ≤ 0.25 V minimizes power loss and self-heating during on-state operation.
Stable DC current gain	h_FE = 120–270 at I_C = 2 mA ensures predictable amplification across production lots.
Small-outline packaging	SOT-323 footprint saves board space and supports high-density PCB layouts in portable devices.

Applications

Portable Audio Amplifiers	LED Driver Circuits
Use Scenario: Amplifying line-level audio signals in compact Bluetooth speakers and headphone amplifiers. IC Role / Device Role / Timing Role: NPN BJT configured as Class-A common-emitter preamplifier stage. Use Value: High h_FE and low noise enable clean gain without external biasing complexity or op-amp overhead.	Use Scenario: Driving indicator and status LEDs in wearables and IoT sensor nodes. IC Role / Device Role / Timing Role: Low-side switch controlling LED anode-to-V_CC current path. Use Value: Low V_CE(sat) preserves battery life by limiting voltage drop to ≤0.25 V at 10–20 mA LED current.
Logic-Level Interface	Signal Conditioning Stages
Use Scenario: Translating 1.8 V or 3.3 V microcontroller GPIO outputs to 5 V or 12 V peripheral control signals. IC Role / Device Role / Timing Role: Digital switch operating in saturation/cutoff modes with sharp transition response. Use Value: Fast f_T and low storage time ensure sub-100 ns turn-on/off delays compatible with MCU timing budgets.	Use Scenario: Buffering and level-shifting analog sensor outputs prior to ADC sampling in industrial monitoring systems. IC Role / Device Role / Timing Role: Emitter-follower configuration providing impedance transformation and DC offset adjustment. Use Value: Stable h_FE and low input capacitance maintain signal integrity across temperature and supply variations.

Portable Audio Amplifiers

LED Driver Circuits

Use Scenario: Amplifying line-level audio signals in compact Bluetooth speakers and headphone amplifiers.

IC Role / Device Role / Timing Role: NPN BJT configured as Class-A common-emitter preamplifier stage.

Use Value: High h_FE and low noise enable clean gain without external biasing complexity or op-amp overhead.

Use Scenario: Driving indicator and status LEDs in wearables and IoT sensor nodes.

IC Role / Device Role / Timing Role: Low-side switch controlling LED anode-to-V_CC current path.

Use Value: Low V_CE(sat) preserves battery life by limiting voltage drop to ≤0.25 V at 10–20 mA LED current.

Logic-Level Interface

Signal Conditioning Stages

Use Scenario: Translating 1.8 V or 3.3 V microcontroller GPIO outputs to 5 V or 12 V peripheral control signals.

IC Role / Device Role / Timing Role: Digital switch operating in saturation/cutoff modes with sharp transition response.

Use Value: Fast f_T and low storage time ensure sub-100 ns turn-on/off delays compatible with MCU timing budgets.

Use Scenario: Buffering and level-shifting analog sensor outputs prior to ADC sampling in industrial monitoring systems.

IC Role / Device Role / Timing Role: Emitter-follower configuration providing impedance transformation and DC offset adjustment.

Use Value: Stable h_FE and low input capacitance maintain signal integrity across temperature and supply variations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847BW,115	Same SOT-323 package; h_FE = 110–220 @ I_C = 2 mA; f_T = 100 MHz; V_CEO = 45 V.	Lower f_T and V_CEO limit use in higher-frequency or higher-voltage switching.	Select when cost sensitivity outweighs need for 180 MHz bandwidth or 50 V rating.
MMBT3904LT1G	SOT-23 package; h_FE = 100–300 @ I_C = 10 mA; f_T = 300 MHz; V_CEO = 40 V; higher P_D = 310 mW.	Larger footprint and different pinout require PCB layout change; higher f_T suits RF front-end use.	Choose for improved RF performance where board space permits SOT-23 and thermal margin is critical.

Compared with BC847BW,115 and MMBT3904LT1G, the 2SC4027S-E offers balanced high-speed capability (180 MHz), robust 50 V rating, and tight h_FE spread in the smallest SOT-323 form factor-making it optimal for space-constrained, mid-frequency switching and amplification where thermal budget is limited to 200 mW.

Availability

2SC4027S-E is available at Aetrix Electronics and suitable for portable audio amplifiers, LED driver circuits, logic-level interface modules, and signal conditioning stages requiring stable component supply and consistent parametric performance across production batches.

Supply support for 2SC4027S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient silicon solutions for automotive, industrial, cloud, medical, and edge applications, with emphasis on intelligent power and sensing technologies.

The 2SC4027S-E belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable, low-cost signal amplification and switching in consumer and industrial electronics where size, speed, and consistency are critical.

FAQ

What is the maximum operating temperature for the 2SC4027S-E?

The 2SC4027S-E is rated for operation from −55 °C to +150 °C junction temperature. Its thermal resistance R_θJA is 417 °C/W, meaning that at 200 mW power dissipation and 25 °C ambient, junction temperature rises to approximately 130 °C-well within safe limits. Derating is required above 25 °C ambient per the datasheet curve.

Does the 2SC4027S-E support high-frequency amplification?

Yes, the 2SC4027S-E has a transition frequency f_T of 180 MHz, enabling effective small-signal amplification up to ~30 MHz with usable gain. It is commonly used in VHF-band RF preamplifiers and high-speed digital switching, though not intended for GHz-range applications.

Is the 2SC4027S-E RoHS compliant and halogen-free?

Yes, the 2SC4027S-E meets RoHS Directive 2011/65/EU and is certified halogen-free per onsemi's material declarations. The SOT-323 package uses lead-free matte tin plating and complies with JEDEC J-STD-020 moisture sensitivity Level 1.

What is the typical DC current gain (h_FE) of the 2SC4027S-E at 10 mA collector current?

At I_C = 10 mA and V_CE = 1 V, the 2SC4027S-E exhibits h_FE = 100–240, per the onsemi datasheet. This range reflects production lot variation and remains tightly controlled compared to broader-spec alternatives, supporting predictable bias design.

Can the 2SC4027S-E replace a 2N3904 in existing designs?

The 2SC4027S-E shares functional similarity with the 2N3904 but differs in package (SOT-323 vs TO-92), pinout (E-B-C vs E-C-B), and electrical specs (higher f_T, tighter h_FE). Direct replacement requires PCB redesign and validation; it is not a drop-in substitute, though functionally comparable in many low-power amplifier roles.

2SC4027S-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1.5 A

Voltage - Collector Emitter Breakdown (Max):: 160 V

Vce Saturation (Max) @ Ib, Ic:: 450mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 120MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TP

2SC4027S-E FAQ

1.How can I place an order for 2SC4027S-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC4027S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC4027S-E reliable?

The price and inventory of 2SC4027S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC4027S-E is usually 5 days.

3.What payment methods are accepted for 2SC4027S-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC4027S-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC4027S-E?

2SC4027S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC4027S-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC4027S-E?

For technical support, including 2SC4027S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC4027S-E requirements.

6.How does Aetrix verify that 2SC4027S-E is sourced from the original manufacturer or authorized distributors?

All 2SC4027S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC4027S-E meets industry standards.

7.What is the process for return or replacement of 2SC4027S-E?

All 2SC4027S-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC4027S-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC4027S-E part is unused and in its original packaging.

Return procedure for 2SC4027S-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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