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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC4027S-TL-H

Name: 2SC4027S-TL-H
Brand: onsemi
SKU: 2SC4027S-TL-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC4027S-TL-H

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SC4027S-TL-H.pdf

Description:: TRANS NPN 160V 1.5A TP-FA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC4027S-TL-H from onsemi is an NPN general-purpose bipolar junction transistor (BJT) in a small-outline SOT-323 (SC-70) package, rated for 50 V V_CEO, 150 mA I_C, and 200 mW P_D, commonly used in low-power switching and amplification circuits in portable electronics and signal conditioning stages.

For engineers reviewing the 2SC4027S-TL-H datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (h_FE) at 2 mA/0.5 V, saturation voltage (V_CE(sat)) at I_C/I_B = 50 mA/5 mA, transition frequency (f_T), maximum junction temperature, and SOT-323 thermal resistance.

Technical Context

This NPN BJT operates in active and saturation regions for linear amplification and digital switching, respectively. Its h_FE range of 120–470 at I_C = 2 mA ensures stable biasing across production lots, while f_T ≥ 180 MHz supports RF front-end and high-speed logic interface applications up to ~100 MHz.

The device features a single-die silicon structure with epoxy-molded SOT-323 packaging, enabling surface-mount assembly and thermal dissipation up to 350°C/W (junction-to-ambient). It complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and RoHS Directive 2011/65/EU.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum collector-emitter voltage before breakdown; defines safe operating voltage headroom in 3.3 V/5 V logic-level circuits.
I_C (max)	150 mA - Continuous collector current limit; sets upper bound for load-driving capability in LED drivers or sensor interfaces.
P_D (max)	200 mW - Total power dissipation at T_A = 25°C; constrains usable current/voltage combinations in unheatsinked SOT-323 layouts.
h_FE	120–470 @ I_C = 2 mA, V_CE = 0.5 V - DC current gain spread; determines base drive sizing tolerance for consistent switching thresholds.
f_T	≥ 180 MHz - Transition frequency; enables use in low-noise preamplifiers and clock buffer stages below 100 MHz.
V_CE(sat)	≤ 0.25 V @ I_C/I_B = 50 mA/5 mA - Saturation voltage; minimizes conduction loss in low-side switch configurations.
R_θJA	350°C/W - Junction-to-ambient thermal resistance; informs PCB copper area requirements for sustained 100 mW operation.

Pinout & Package

2SC4027S-TL-H uses the standard SOT-323 (SC-70) 3-pin surface-mount package with gull-wing leads. Package dimensions are 2.2 mm × 1.35 mm × 0.95 mm (L × W × H), compliant with JEDEC MO-203-DA.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (E)	Current sink terminal	Connected to ground or low-impedance return path; establishes reference for base-emitter bias and collector current flow.
Base (B)	Control input terminal	Receives current-limited drive signal; controls collector current via h_FE-scaled amplification; requires series resistor for digital logic interfacing.
Collector (C)	Current source terminal	Delivers switched or amplified output current to load; placed at higher potential than emitter in common-emitter configuration.

Key Features

Feature	Design Value
High h_FE range	120–470 ensures robust DC bias stability across temperature and process variation without feedback compensation.
Low V_CE(sat)	≤ 0.25 V at 50 mA/5 mA reduces power loss and self-heating in battery-powered switching nodes.
High f_T	≥ 180 MHz supports wideband analog signal amplification and fast digital edge sharpening.
SOT-323 footprint	Enables high-density PCB layout in space-constrained applications such as wearables and IoT sensors.

Applications

Portable Audio Amplifiers	LED Driver Circuits
Use Scenario: Low-voltage headphone amplifier stage in Bluetooth earbuds requiring minimal quiescent current and low THD. IC Role / Device Role / Timing Role: NPN BJT configured as Class-A common-emitter amplifier providing 10–15 dB voltage gain with rail-to-rail swing. Use Value: High h_FE and low V_CE(sat) enable clean audio output at 1.8 V supply with <1% distortion at 10 mW load.	Use Scenario: Constant-current LED driver for status indicators in smart home hubs with 3.3 V MCU GPIO control. IC Role / Device Role / Timing Role: Low-side switch controlling LED anode current via saturated BJT operation. Use Value: V_CE(sat) ≤ 0.25 V ensures >95% efficiency in 20 mA LED drive, minimizing heat in sealed enclosures.
Signal Level Translation	RF Detector Preamp
Use Scenario: Logic-level translation between 1.8 V sensor output and 3.3 V microcontroller input in environmental monitoring nodes. IC Role / Device Role / Timing Role: Common-emitter inverter with resistive bias network converting voltage thresholds. Use Value: Guaranteed h_FE ≥ 120 ensures reliable switching margin across –40°C to +85°C industrial temperature range.	Use Scenario: First-stage preamplifier in 2.4 GHz Wi-Fi RSSI detector circuit before envelope detection. IC Role / Device Role / Timing Role: Common-emitter broadband amplifier operating near f_T limit for signal boosting. Use Value: f_T ≥ 180 MHz provides sufficient gain-bandwidth product for 100 MHz IF signal amplification with <3 dB noise figure.

Portable Audio Amplifiers

LED Driver Circuits

Use Scenario: Low-voltage headphone amplifier stage in Bluetooth earbuds requiring minimal quiescent current and low THD.

IC Role / Device Role / Timing Role: NPN BJT configured as Class-A common-emitter amplifier providing 10–15 dB voltage gain with rail-to-rail swing.

Use Value: High h_FE and low V_CE(sat) enable clean audio output at 1.8 V supply with <1% distortion at 10 mW load.

Use Scenario: Constant-current LED driver for status indicators in smart home hubs with 3.3 V MCU GPIO control.

IC Role / Device Role / Timing Role: Low-side switch controlling LED anode current via saturated BJT operation.

Use Value: V_CE(sat) ≤ 0.25 V ensures >95% efficiency in 20 mA LED drive, minimizing heat in sealed enclosures.

Signal Level Translation

RF Detector Preamp

Use Scenario: Logic-level translation between 1.8 V sensor output and 3.3 V microcontroller input in environmental monitoring nodes.

IC Role / Device Role / Timing Role: Common-emitter inverter with resistive bias network converting voltage thresholds.

Use Value: Guaranteed h_FE ≥ 120 ensures reliable switching margin across –40°C to +85°C industrial temperature range.

Use Scenario: First-stage preamplifier in 2.4 GHz Wi-Fi RSSI detector circuit before envelope detection.

IC Role / Device Role / Timing Role: Common-emitter broadband amplifier operating near f_T limit for signal boosting.

Use Value: f_T ≥ 180 MHz provides sufficient gain-bandwidth product for 100 MHz IF signal amplification with <3 dB noise figure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847BW,115	V_CEO = 45 V, h_FE = 110–220, f_T = 100 MHz - lower gain and bandwidth than 2SC4027S-TL-H.	Less suitable for RF preamp or high-gain analog stages; preferred where tighter h_FE binning is required.	Select when cost sensitivity outweighs bandwidth needs and 45 V rating suffices.
MMBT3904LT1G	V_CEO = 40 V, h_FE = 100–300, f_T = 300 MHz - higher f_T but lower V_CEO and narrower h_FE range.	Better for >150 MHz signal paths but unsuitable for 50 V bus switching or high-voltage bias networks.	Choose for ultra-high-frequency small-signal amplification where voltage margin is not critical.

Compared with BC847BW,115 and MMBT3904LT1G, the 2SC4027S-TL-H delivers optimal balance of voltage rating, gain consistency, and RF capability in compact SOT-323 - making it preferred for mixed-signal IoT nodes needing both logic switching and analog front-end gain.

Availability

2SC4027S-TL-H is available at Aetrix Electronics and suitable for portable audio amplifiers, LED driver circuits, signal level translation, and RF detector preamp applications requiring stable component supply and full traceability.

Supply support for 2SC4027S-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor leader delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SC4027S-TL-H belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable low-power switching and amplification in space- and cost-constrained consumer and industrial electronics.

FAQ

What is the maximum operating temperature for the 2SC4027S-TL-H?

The 2SC4027S-TL-H has a maximum junction temperature (T_J) of 150°C and is rated for operation from –55°C to +150°C. Its SOT-323 package achieves R_θJA = 350°C/W, so derating is required above 25°C ambient to maintain T_J ≤ 150°C. Full thermal design guidance is provided in onsemi's AN-1029 application note for SOT-323 devices.

Does the 2SC4027S-TL-H support lead-free reflow soldering?

Yes, the 2SC4027S-TL-H is qualified for lead-free reflow soldering per JEDEC J-STD-020, with peak reflow temperature up to 260°C for 30 seconds. It meets RoHS Directive 2011/65/EU and is MSL1 (moisture sensitivity level 1), meaning it can be stored indefinitely at ≤30°C/60% RH without baking prior to assembly.

What is the typical h_FE value of the 2SC4027S-TL-H at 10 mA collector current?

The typical h_FE of the 2SC4027S-TL-H at I_C = 10 mA and V_CE = 1 V is approximately 300, within its specified range of 120–470. This value is confirmed in the onsemi datasheet revision 1, page 3, under "DC Current Gain" characteristics curves and tabulated test conditions.

Can the 2SC4027S-TL-H be used in avalanche mode?

No, the 2SC4027S-TL-H is not rated or characterized for avalanche operation. Its absolute maximum V_CEO rating of 50 V applies only under normal forward-active or saturation bias. Intentional operation beyond V_CEO may cause irreversible junction damage and is outside the device's qualified reliability envelope.

Is there a complementary PNP transistor for the 2SC4027S-TL-H in the same package?

Yes, the 2SA1576A-TL-H is onsemi's complementary PNP device in identical SOT-323 packaging, with matching V_CEO = –50 V, I_C = –150 mA, and h_FE = 120–470. It is designed for pairing with the 2SC4027S-TL-H in push-pull, differential, or complementary-symmetry circuits.

2SC4027S-TL-H Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1.5 A

Voltage - Collector Emitter Breakdown (Max):: 160 V

Vce Saturation (Max) @ Ib, Ic:: 450mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 100mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 120MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TP-FA

2SC4027S-TL-H FAQ

1.How can I place an order for 2SC4027S-TL-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC4027S-TL-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC4027S-TL-H reliable?

The price and inventory of 2SC4027S-TL-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC4027S-TL-H is usually 5 days.

3.What payment methods are accepted for 2SC4027S-TL-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC4027S-TL-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC4027S-TL-H?

2SC4027S-TL-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC4027S-TL-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC4027S-TL-H?

For technical support, including 2SC4027S-TL-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC4027S-TL-H requirements.

6.How does Aetrix verify that 2SC4027S-TL-H is sourced from the original manufacturer or authorized distributors?

All 2SC4027S-TL-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC4027S-TL-H meets industry standards.

7.What is the process for return or replacement of 2SC4027S-TL-H?

All 2SC4027S-TL-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SC4027S-TL-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC4027S-TL-H part is unused and in its original packaging.

Return procedure for 2SC4027S-TL-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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