onsemi 2SC4106M

Overview

2SC4106M from SANYO is an NPN triple diffused planar silicon transistor designed for high-voltage switching regulator applications, with V_CEO = 400 V, I_C = 7 A, P_C = 1.57 W (T_C = 25 °C), and f_T = 20 MHz - used in offline SMPS primary-side switching stages requiring robust avalanche ruggedness and fast turn-on/turn-off.

For engineers reviewing the 2SC4106M datasheet, pinout, applications, or equivalent options, key selection criteria include its 400 V V_CEO, 7 A continuous collector current, TO-220AB package thermal performance, and confirmed h_FE classification (L/M/N ranks) under V_CE = 5 V, I_C = 0.8 A conditions.

Technical Context

This device employs SANYO's MBIT (Modified Base Injection Technology) process to achieve wide Active Safe Operating Area (ASO), supporting both forward-bias (100 µs pulse) and reverse-bias (1 ms pulse) operation up to 200 V with I_CP = 14 A. Its high-speed switching is enabled by low storage time (t_s = 0.5 µs) and fall time (t_f = 0.3 µs) under specified test conditions (V_CC = 200 V, I_C = 5 A, R_L = 40 Ω).

The 2SC4106M features a guaranteed V_CEO of 400 V and V_CB0 of 500 V, enabling use in flyback and forward converter topologies operating at ≥375 V DC link. Its V_CE(sat) ≤ 0.8 V at I_C = 4 A, I_B = 0.8 A ensures low conduction loss during saturation, while V_BE(sat) ≤ 1.5 V supports direct drive from standard logic-level gate drivers.

Key Specifications

Pinout & Package

SANYO specifies TO-220AB package for the 2SC4106M, with standard lead assignment: Pin 1 = Base, Pin 2 = Collector (tab-connected), Pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with 2SC4106M, 2SC4098 offers identical voltage rating but trades 2 A current capacity and 5 MHz bandwidth for cost reduction, while MJD47 delivers higher current but sacrifices switching speed and gain consistency - making 2SC4106M optimal for 50–100 kHz SMPS where balance of voltage, current, speed, and gain control is required.

Availability

2SC4106M is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS modules, LED driver power stages, and UPS inverter pre-regulators requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SC4106M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012; known for high-reliability transistor processes and rigorous ASO characterization.

The 2SC4106M belongs to SANYO's high-voltage switching transistor product line, engineered specifically for offline switch-mode power supplies demanding ruggedness, predictable gain, and controlled switching behavior under transient stress.

FAQ

What is the maximum junction temperature rating for the 2SC4106M?

The 2SC4106M has a maximum junction temperature (T_j) rating of 150 °C, as specified in its Absolute Maximum Ratings table. This allows operation in high-ambient environments such as enclosed industrial power supplies. Derating curves in the datasheet show that at T_C = 25 °C, the device can dissipate 1.57 W; above 25 °C, power dissipation must be linearly reduced to maintain T_j ≤ 150 °C. The 2SC4106M must be mounted on a heatsink when ambient temperatures exceed 50 °C or when continuous power dissipation exceeds 0.8 W.

Does the 2SC4106M support avalanche energy rating, and if so, what is its value?

The 2SC4106M does not specify a rated single-pulse avalanche energy (E_AS) in its datasheet. However, its wide Forward Bias ASO curve (up to 200 V/14 A for 100 µs) and Reverse Bias ASO (up to 200 V/14 A for 1 ms) confirm robust secondary breakdown immunity under transient overvoltage conditions typical in flyback and forward converters. While not formally rated for repetitive avalanche, the 2SC4106M's MBIT process and layout provide inherent ruggedness beyond standard planar transistors - verified in application notes for SANYO's ENN2471A series, which includes the 2SC4106M.

What is the base-emitter breakdown voltage (V_BO) specification for the 2SC4106M?

The 2SC4106M has a guaranteed base-emitter breakdown voltage (V_BO) of 7 V minimum, tested under open-collector conditions (I_E = 1 mA). This rating ensures compatibility with standard ±5 V or ±12 V base drive circuits without requiring external clamping diodes. The datasheet confirms V_BO = 7 V at I_E = 1 mA, with typical values reaching 8.5 V. Exceeding this voltage risks permanent degradation of the base-emitter junction, especially during negative base drive transients in totem-pole or push-pull configurations.

How is h_FE binned for the 2SC4106M, and what do the L/M/N ranks mean?

The 2SC4106M is binned into three h_FE (DC current gain) ranks: L (30–150), M (40–200), and N (50–300), measured at V_CE = 5 V and I_C = 0.8 A. Rank designation appears as a suffix on the device marking (e.g., "2SC4106M-L"). This binning allows designers to select precise base drive resistors - for example, an L-rank unit requires ~20% higher I_B than an N-rank unit to achieve the same I_C. The 2SC4106M datasheet explicitly states that specifying two or more ranks is recommended for production orders to ensure sufficient supply flexibility without compromising circuit performance.

Can the 2SC4106M be used in linear regulator applications, or is it strictly for switching?

The 2SC4106M is optimized for switching regulator applications and is not recommended for linear regulator use. Its SOA curves show limited safe operating area in the linear region - particularly at high V_CE and moderate I_C - due to secondary breakdown constraints. The datasheet provides only forward-bias and reverse-bias ASO boundaries, with no DC SOA chart. For linear applications requiring >1 W dissipation, devices like the 2N3055 or MJ15003 offer broader DC SOA. The 2SC4106M's design focus is fast switching, low V_CE(sat), and high-voltage blocking - not linear bias stability or thermal uniformity.