onsemi 2SC4108M
- Part No.:
- 2SC4108M
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
2SC4108M.pdf
- Description:
- TRANS NPN 400V 12A TO-3PB
- Quantity:
- Payment:

- Shipping:

Inventory:4,453
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Product details
Overview
2SC4108M from SANYO is an NPN triple diffused planar silicon transistor designed for high-voltage switching regulator applications, featuring 400 V VCEO, 12 A IC, 100 W PC (TC = 25 °C), and fT = 20 MHz - used in offline SMPS primary-side switching stages requiring robust avalanche ruggedness and fast turn-on/turn-off.
For engineers reviewing the 2SC4108M datasheet, pinout, applications, or equivalent options, key selection criteria include VCEO ≥ 400 V, IC ≥ 12 A DC, SOA compliance under inductive switching, TO-3PB thermal performance, and hFE classification (L/M/N) for gain-binned designs.
Technical Context
This device employs SANYO's MBIT (Metal Bonding Integrated Technology) process to achieve wide Active Safe Operating Area (ASO) and high-speed switching with ton = 0.5 µs and tf = 0.3 µs at IC = 10 A, VCC = 200 V, RL = 20 Ω. Its rugged reverse-bias ASO supports inductive load commutation without snubbers in flyback and forward converters.
It operates with VBE(sat) = 1.4 V at IC/IB = 5 and exhibits VCE(sat) = 0.8 V under same conditions, enabling low conduction loss in hard-switched topologies. The device is rated for Tj ≤ 150 °C and storage from –55 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 400 V - Withstands 400 V collector-emitter voltage in open-base condition, suitable for 200–250 V AC-input SMPS primary switches. |
| IC (DC) | 12 A - Continuous collector current rating enables use in 150–300 W power supplies without forced cooling. |
| PC (TC = 25 °C) | 100 W - Thermal limit at case temperature defines heatsink sizing requirement for continuous operation. |
| fT | 20 MHz - Transition frequency supports stable high-frequency switching up to ~100 kHz with adequate gain margin. |
| ton/tf | 0.5 µs / 0.3 µs - Fast switching times reduce switching losses in hard-switched converters operating at 20–100 kHz. |
| hFE (IC = 1.6 A) | 100–300 (rank L/M/N) - Gain binning allows predictable base drive design across production lots. |
| VCE(sat) | 0.8 V @ IC/IB = 5 - Low saturation voltage minimizes conduction loss and heatsink burden in linear or quasi-saturated operation. |
Pinout & Package
SANYO TO-3PB package: metal-can, isolated collector tab, 3-pin through-hole mounting with integral heatsink interface. Dimensions per spec sheet 2022A: 15.6 mm × 14.0 mm × 20.0 mm (L×W×H), 3.5 mm lead spacing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base current to saturate or cut off the transistor; requires current-limited drive due to IB(max) = 4 A pulsed. |
| 2 (Collector) | High-voltage power output | Connected to primary winding of transformer or inductive load; electrically tied to metal tab for thermal path and isolation. |
| 3 (Emitter) | Power return reference | Provides low-impedance emitter return path; must be routed with minimal inductance to avoid switching oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| High breakdown voltage | VCEO = 400 V and VCB0 = 500 V enable direct use in 230 VAC rectified bus (≈325 V) with margin for surge and ringing. |
| Wide Active Safe Operating Area (ASO) | Forward- and reverse-bias ASO curves validated per ITR06328/ITR06329 support reliable inductive switching without external snubbers. |
| MBIT process technology | Metal bonding integration improves thermal resistance and current handling uniformity across die surface, enhancing reliability under pulse stress. |
| High-speed switching | ton = 0.5 µs and tf = 0.3 µs reduce energy loss per cycle in 50–100 kHz SMPS, improving efficiency and easing EMI filtering. |
Applications
| Switch-Mode Power Supplies | DC-DC Converters |
|---|---|
Use Scenario: Primary-side switching in 150–300 W offline flyback or forward converters with universal AC input (85–264 VAC). IC Role / Device Role / Timing Role: High-voltage NPN switch controlling energy transfer via transformer primary; driven by UC3842/UC3845-based PWM controller. Use Value: 400 V VCEO and 100 W PC allow single-transistor topology without series stacking or active clamping in cost-sensitive designs. | Use Scenario: Isolated DC-DC converter in industrial PLC power modules converting 24 VDC input to ±15 VDC outputs. IC Role / Device Role / Timing Role: Primary-side switch in push-pull or half-bridge configuration operating at 50 kHz with fixed duty cycle. Use Value: Wide ASO and 20 MHz fT ensure stable switching under variable load and line conditions without gain collapse or secondary breakdown. |
| Motor Drive Circuits | Inductive Load Switching |
Use Scenario: Low-frequency (<5 kHz) gate drive stage for IGBTs in HVAC blower motor inverters. IC Role / Device Role / Timing Role: Darlington pre-driver or high-current level shifter interfacing microcontroller GPIO to IGBT gate driver IC. Use Value: 12 A IC and 100 W dissipation capability support sustained base drive current delivery without thermal runaway. | Use Scenario: Solenoid and relay control in automotive body control modules where inductive kick must be safely clamped. IC Role / Device Role / Timing Role: High-side or low-side switch managing 24 V/5 A solenoid loads with freewheeling diode integration. Use Value: Reverse-bias ASO compliance (per ITR06329) ensures safe energy dissipation during turn-off without external TVS or Zener clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SC4027 | VCEO = 400 V, IC = 10 A, PC = 80 W, TO-3PB - lower current and power rating than 2SC4108M. | Acceptable in ≤120 W SMPS but requires derating above 85 °C ambient; not recommended for 12 A continuous loads. | Select when lower cost and reduced thermal budget are acceptable, and peak IC remains ≤10 A. |
| BU508A | VCEO = 1000 V, IC = 12 A, PC = 125 W, TO-3 - higher voltage rating, larger package, no hFE binning. | Over-specified for 230 VAC inputs; higher VCE(sat) (~1.2 V) increases conduction loss in mid-power designs. | Prefer for 380–400 VDC bus applications or where extended voltage margin is mandatory; avoid if footprint or thermal interface differs. |
Compared with 2SC4108M, 2SC4027 offers lower cost but reduced current headroom, while BU508A provides greater voltage safety margin at the expense of higher conduction loss and board space - making 2SC4108M optimal for balanced 150–300 W SMPS where 400 V/12 A/100 W align precisely with design targets.
Availability
2SC4108M is available at Aetrix Electronics and suitable for switching-mode power supplies, industrial DC-DC converters, and motor drive circuits requiring stable component supply and long-term manufacturability.
Supply support for 2SC4108M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power transistors, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012; known for rugged high-voltage discrete devices.
The 2SC4108M belongs to SANYO's high-reliability NPN switching transistor family engineered for offline AC-DC power conversion, emphasizing avalanche ruggedness, wide SOA, and thermal stability in unregulated or lightly regulated SMPS.
FAQ
What is the maximum junction temperature rating for the 2SC4108M?
The 2SC4108M has a maximum junction temperature (Tj) rating of 150 °C. This limit must not be exceeded during operation, and thermal design must ensure that power dissipation - including both conduction and switching losses - keeps Tj within specification under worst-case ambient and airflow conditions. Derating is required above TC = 25 °C per the PC–Ta curve (ITR06330).
Does the 2SC4108M support avalanche energy handling in inductive switching?
Yes, the 2SC4108M is characterized for Avalanche Safe Operating Area (ASO) in both forward- and reverse-bias conditions (ITR06328/ITR06329). Its rugged construction enables reliable operation during inductive turn-off without external snubbers, provided peak IC and VCE remain within published ASO boundaries at the given pulse width and duty cycle.
What is the typical hFE range for the 2SC4108M and how is it binned?
The 2SC4108M is binned into three hFE ranks: L (100–200), M (200–300), and N (300–500), measured at VCE = 5 V and IC = 1.6 A. Rank designation appears in the part suffix (e.g., 2SC4108M-M); gain consistency supports predictable base drive design across production lots when specified.
Can the 2SC4108M be used in parallel configurations?
Parallel operation of 2SC4108M devices is not recommended without individual emitter resistors and matched hFE bins. Due to parameter spread (especially VBE(on) and hFE) and thermal coupling effects, current imbalance may occur, risking thermal runaway. For higher current needs, select a single higher-rated device or verify matching per application note ENN2473A.
What is the safe operating voltage for the base-emitter junction of the 2SC4108M?
The 2SC4108M has a maximum base-emitter reverse voltage rating (VBO) of 7 V. Exceeding this - even momentarily - risks junction breakdown. In switching applications with inductive base drive, a clamping diode (e.g., 1N4148) from base to emitter is strongly advised to prevent negative VBE overshoot beyond –5 V.
2SC4108M Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 12 A
- Voltage - Collector Emitter Breakdown (Max):
- 400 V
- Vce Saturation (Max) @ Ib, Ic:
- 800mV @ 1.6A, 8A
- Current - Collector Cutoff (Max):
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 1.6A, 5V
- Power - Max:
- 2.5 W
- Frequency - Transition:
- 20MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3PB
2SC4108M FAQ
1.How can I place an order for 2SC4108M through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SC4108M on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SC4108M reliable?
The price and inventory of 2SC4108M are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC4108M is usually 5 days.
3.What payment methods are accepted for 2SC4108M?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC4108M transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SC4108M?
2SC4108M orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SC4108M order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SC4108M?
For technical support, including 2SC4108M datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC4108M requirements.
6.How does Aetrix verify that 2SC4108M is sourced from the original manufacturer or authorized distributors?
All 2SC4108M products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC4108M meets industry standards.
7.What is the process for return or replacement of 2SC4108M?
All 2SC4108M units undergo pre-shipment inspection (PSI). If there is an issue with 2SC4108M, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SC4108M part is unused and in its original packaging.
Return procedure for 2SC4108M:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SC4108M Tags

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