Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2SC4135T-TL-E

Part No.:
2SC4135T-TL-E
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
Aetrix2SC4135T-TL-E.pdf
Description:
TRANS NPN 100V 2A TP-FA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,291

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SC4135T-TL-E from onsemi is an NPN bipolar junction transistor (BJT) designed for medium-power switching applications, featuring 100 V VCEO, 2 A IC, low 0.13 V typical VCE(sat) at IC = 1 A / IB = 100 mA, 120 MHz fT, and housed in the slim TP-FA (TO-252) surface-mount package. It is used in relay drivers, lamp drivers, and DC-DC converter output stages where fast switching and low conduction loss are required.

For engineers reviewing the 2SC4135T-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at 1 A, hFE rank T (200–400), TO-252 thermal capability under 15 W PC at Tc = 25°C, and compatibility with high-density PCB layouts enabled by its 7.0 × 5.0 mm footprint.

Technical Context

This device belongs to the complementary 2SA1593/2SC4135 pair, fabricated using onsemi's FBET and MBIT processes to achieve high breakdown voltage and fast switching. Its TP-FA package features a 4-pin configuration with dual collector terminals for enhanced current handling and thermal dissipation.

The transistor operates with guaranteed hFE of 200–400 (Rank T), 120 MHz gain-bandwidth product at VCE = −10 V / IC = −100 mA, and switching times of ton = 80 ns, tstg = 1000 ns, and tf = 50 ns - enabling use in 100 kHz–500 kHz hard-switched power stages.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 100 V - supports operation in 48 V and 60 V bus systems with margin against transients.
IC 2 A continuous - delivers sufficient drive current for relays, solenoids, and LED arrays without forced cooling.
VCE(sat) 0.13 V typ. @ IC = 1 A / IB = 100 mA - reduces conduction loss to <130 mW, improving efficiency in linear and saturated switching.
fT 120 MHz - enables stable amplification and fast edge control in pulse-width modulation circuits.
hFE Rank T (200–400) - ensures predictable base drive requirements and consistent gain across production lots.
PC @ Tc = 25°C 15 W - allows direct mounting to copper pour or small heatsink for sustained 2 A operation.
Cob 16 pF @ VCB = 10 V - limits Miller capacitance to support clean turn-off in inductive load switching.

Pinout & Package

Package: TP-FA (JEDEC TO-252, JEITA SC-63), 4-terminal surface-mount package with dual collector leads for improved current sharing and thermal path to PCB.

Pin/Terminal Circuit Role Design Meaning
1 Base Control input requiring ~100 mA base drive for full 1 A collector conduction; low VBE(sat) of −0.85 V typ. minimizes driver loss.
2 Collector Main high-current output terminal; electrically identical to Pin 4 - paralleling both improves current capacity and thermal spreading.
3 Emitter Reference node for load return path; tied directly to ground or low-side shunt in switch-mode topologies.
4 Collector Second collector terminal, internally connected to Pin 2 - must be soldered to same net for rated 2 A operation and thermal derating compliance.

Key Features

Feature Design Value
Low VCE(sat) 0.13 V typical at 1 A enables <130 mW conduction loss, reducing thermal stress in compact enclosures.
High fT 120 MHz bandwidth supports clean square-wave switching up to 500 kHz without excessive rise/fall time degradation.
Dual-collector TP-FA package Two collector pins (2 & 4) lower effective thermal resistance and allow 2 A continuous current with standard 2-oz copper PCB layout.
hFE Rank T binning Guaranteed 200–400 hFE at VCE = −5 V / IC = −100 mA ensures consistent base drive design across production batches.
Fast switching 80 ns turn-on, 50 ns fall time, and 1000 ns storage time enable efficient operation in PWM-controlled power stages.

Applications

Relay Driver Circuit Lamp Driver Module

Use Scenario: Driving 24 V/1 A electromagnetic relay coils in industrial PLC output modules.

IC Role / Device Role / Timing Role: NPN switch operating in saturation mode to close relay contacts with <100 µs response.

Use Value: Low 0.13 V VCE(sat) minimizes coil voltage drop, ensuring reliable pull-in at minimum supply voltage.

Use Scenario: Controlling 12 V/2 A incandescent or halogen lamps in automotive interior lighting.

IC Role / Device Role / Timing Role: High-current linear switch managing lamp brightness via PWM duty cycle.

Use Value: 2 A IC rating and 15 W PC allow direct lamp connection without external heat sinking.

DC-DC Converter Output Stage Power Supply Protection Switch

Use Scenario: Low-side synchronous rectifier or main switch in non-isolated buck converters (48 V input → 5–12 V output).

IC Role / Device Role / Timing Role: Fast-switching NPN transistor handling peak currents up to 2 A at 200 kHz.

Use Value: 120 MHz fT and 50 ns fall time maintain waveform fidelity and reduce switching losses.

Use Scenario: Overcurrent protection switch in 24 V industrial power distribution units.

IC Role / Device Role / Timing Role: Current-limiting series pass element activated by fault detection circuitry.

Use Value: 100 V VCEO withstands load dump transients; 100 nA ICBO ensures negligible leakage during standby.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD127G Higher VCEO (100 V same), but higher VCE(sat) (0.5 V min @ 1 A) and lower fT (3 MHz); TO-252 package, no dual collector. Less suitable for high-efficiency, high-frequency switching; better for simple on/off control with relaxed loss budgets. Select MJD127G only when absolute minimum cost is prioritized over conduction loss and switching speed.
2SC4135S-TL-E Same TP-FA package and electrical specs, but hFE Rank S (140–280); otherwise identical pinout, ratings, and thermal performance. Acceptable where lower gain consistency is tolerable; requires recalculating base drive for worst-case hFE = 140. Choose 2SC4135S-TL-E if design accommodates wider hFE variation and needs lower-cost binning.

Compared with MJD127G and 2SC4135S-TL-E, the 2SC4135T-TL-E offers superior switching speed and tighter hFE control-critical for high-efficiency, thermally constrained designs-while maintaining identical TO-252 footprint and mounting compatibility.

Availability

2SC4135T-TL-E is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and DC-DC converter output stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for 2SC4135T-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2SC4135T-TL-E belongs to onsemi's general-purpose bipolar transistor portfolio, engineered for robust medium-power switching in space-constrained industrial and power management systems.

FAQ

What is the maximum continuous collector current rating for the 2SC4135T-TL-E?

The 2SC4135T-TL-E is rated for 2 A continuous collector current (IC) at Ta = 25°C with proper PCB copper area. Derating applies above 25°C ambient; at Tc = 25°C, it supports 15 W collector dissipation, enabling sustained 2 A operation with adequate heatsinking or thermal pad layout.

Does the 2SC4135T-TL-E have a dual-collector configuration, and how should Pins 2 and 4 be used?

Yes, the 2SC4135T-TL-E uses a TP-FA package with two collector terminals (Pins 2 and 4), internally connected. Both pins must be soldered to the same high-current net to achieve full 2 A rating and optimal thermal transfer to the PCB. Leaving either pin unconnected violates SOA limits and risks premature failure.

What hFE range does the 'T' suffix indicate in 2SC4135T-TL-E?

The 'T' suffix denotes hFE Rank T, specifying a guaranteed DC current gain of 200–400 at VCE = −5 V and IC = −100 mA. This tighter binning improves predictability of base drive requirements compared to Rank S (140–280) or Rank R (100–200) variants of the 2SC4135T-TL-E family.

Is the 2SC4135T-TL-E RoHS-compliant and lead-free?

Yes, the 2SC4135T-TL-E is RoHS-compliant and lead-free, as confirmed by the "Pb Free" marking in the ordering information and compliance documentation (Ordering Number EN2511B). The "-E" suffix explicitly indicates lead-free termination per JEDEC J-STD-609.

How does the 2SC4135T-TL-E compare to the 2SC4135S-TL-E in terms of switching performance?

The 2SC4135T-TL-E and 2SC4135S-TL-E share identical switching parameters - including ton = 80 ns, tf = 50 ns, and fT = 120 MHz - because they differ only in hFE binning (T vs. S). Switching behavior is unaffected by gain rank; both deliver the same dynamic performance in properly biased circuits.

2SC4135T-TL-E Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 100mA, 1A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 5V
Power - Max:
1 W
Frequency - Transition:
120MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TP-FA

2SC4135T-TL-E FAQ

1.How can I place an order for 2SC4135T-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC4135T-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC4135T-TL-E reliable?

The price and inventory of 2SC4135T-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC4135T-TL-E is usually 5 days.

3.What payment methods are accepted for 2SC4135T-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC4135T-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC4135T-TL-E?

2SC4135T-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC4135T-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC4135T-TL-E?

For technical support, including 2SC4135T-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC4135T-TL-E requirements.

6.How does Aetrix verify that 2SC4135T-TL-E is sourced from the original manufacturer or authorized distributors?

All 2SC4135T-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC4135T-TL-E meets industry standards.

7.What is the process for return or replacement of 2SC4135T-TL-E?

All 2SC4135T-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC4135T-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC4135T-TL-E part is unused and in its original packaging.

Return procedure for 2SC4135T-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SC4135T-TL-E Tags

  • 2SC4135T-TL-E
  • 2SC4135T-TL-E PDF
  • 2SC4135T-TL-E Datasheet
  • 2SC4135T-TL-E Specifications
  • 2SC4135T-TL-E Images
  • onsemi
  • onsemi 2SC4135T-TL-E
  • Buy 2SC4135T-TL-E
  • 2SC4135T-TL-E Price
  • 2SC4135T-TL-E Distributor
  • 2SC4135T-TL-E Supplier
  • 2SC4135T-TL-E Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER