Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC4159E

Name: 2SC4159E
Brand: onsemi
SKU: 2SC4159E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2SC4159E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3 Full Pack

Datasheet:: 2SC4159E.pdf

Description:: TRANS NPN 160V 1.5A TO-220ML

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,060

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2SC4159E from SANYO is an NPN epitaxial planar silicon transistor designed for high-voltage switching and audio-frequency power amplification, with V_CEO = −160 V, I_C = −1.5 A, P_C = 15 W at T_c = 25 °C, h_FE = 200–600 (at I_C = −300 mA), and f_T = 100 MHz - used in 100W output predriver stages for linear amplifiers and industrial HV switchers.

For engineers reviewing the 2SC4159E datasheet, pinout, applications, or equivalent options, this page delivers verified package mapping (TO-220ML), terminal roles (Base/Collector/Emitter), absolute maximum ratings, switching time data (t_on = 0.29 µs, t_off = 0.18 µs), and application-specific thermal derating curves.

Technical Context

The 2SC4159E operates as a medium-power NPN bipolar junction transistor optimized for linear and switching operation in high-voltage, moderate-current circuits. Its design emphasizes low saturation voltage (V_CE(sat) ≤ −0.8 V at I_C = −1.5 A, I_B = −150 mA) and stable DC current gain across temperature (h_FE maintained from −25 °C to 125 °C).

It features a micaless TO-220ML package enabling direct heatsink mounting without insulating washers, and supports fast switching via controlled minority-carrier lifetime - confirmed by t_on/t_off test conditions (V_CC = 20 V, I_C = 0.5 A, PW = 20 µs) and Cob = 32 pF at V_CB = −10 V, f = 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−160 V - Withstands collector-to-emitter voltage up to 160 V in open-base configuration, suitable for Class AB amplifier rails and flyback snubbers.
I_C (DC)	−1.5 A - Continuous collector current rating defining safe linear operation envelope before thermal runaway.
P_C (T_c=25°C)	15 W - Maximum dissipation at case temperature 25 °C; derates linearly above 25 °C per PC–Ta curve (0 W at 150 °C).
h_FE	200–600 at I_C = −300 mA, V_CE = −5 V - Gain range enables predictable biasing in fixed-gain predriver stages without feedback trimming.
f_T	100 MHz at I_C = −50 mA, V_CE = −10 V - Supports stable AF amplification up to 20 kHz with margin, and limited RF predriver use below 30 MHz.
V_CE(sat)	≤ −0.8 V at I_C = −1.5 A, I_B = −150 mA - Low saturation loss improves efficiency in switching regulators and pulse drivers.
t_on/t_off	0.29 µs / 0.18 µs - Verified switching times under defined test circuit (51 Ω, 1 kΩ, 40 kΩ drive), enabling accurate dead-time calculation in push-pull stages.

Pinout & Package

2SC4159E uses the SANYO TO-220ML package - a micaless, insulated-tab variant of TO-220 with metal tab electrically connected to collector, enabling direct heatsink mounting without isolation hardware.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Base	Current-controlled input node; requires series resistor (e.g., 40 kΩ) to limit I_B and ensure h_FE-based gain stability.
2 (Center)	Collector	High-voltage output node; electrically tied to metal tab - must be isolated from heatsink unless heatsink is floating or collector-referenced.
3 (Right)	Emitter	Common return path; polarity-sensitive connection point - reverse biasing beyond V_EB = −6 V risks junction breakdown.

Key Features

Feature	Design Value
Micaless TO-220ML package	Eliminates need for insulating pads or mica washers during heatsink mounting, reducing thermal resistance and assembly cost.
High V_CEO (−160 V)	Enables direct use in ±80 V supply rails without series stacking, simplifying BJT-based linear regulator and amplifier designs.
Controlled h_FE binning (200–600)	Supports production-grade matching in complementary pairs (e.g., with 2SA1606) without individual gain sorting.
Low V_CE(sat) at rated I_C	Minimizes conduction loss in Class AB output stages - critical for thermal management in compact 100W predrivers.
Verified fast switching (t_on + t_off < 0.5 µs)	Permits clean square-wave drive in PWM-based HV gate drivers and solid-state relay interfaces.

Applications

Audio Power Amplifier Pre-Driver	Industrial HV Switching Regulator
Use Scenario: Driving complementary NPN/PNP output stage in discrete 100W linear amplifier with ±70 V rails. IC Role / Device Role / Timing Role: NPN predriver transistor providing current gain and voltage swing to reduce loading on preceding VAS stage. Use Value: High h_FE and low V_CE(sat) maintain linearity at full output while minimizing thermal stress on output devices.	Use Scenario: High-side switch in 120 V DC–DC converter for factory automation control modules. IC Role / Device Role / Timing Role: Medium-speed switching transistor controlling energy transfer into transformer primary with 20 µs pulse width. Use Value: Verified t_on/t_off and robust V_CEO rating ensure reliable operation at 25 kHz switching frequency without snubber overdesign.
RF Signal Generator Output Stage	Test Equipment HV Bias Supply
Use Scenario: Final gain stage in 1–30 MHz bench signal generator delivering 20 dBm into 50 Ω load. IC Role / Device Role / Timing Role: Linear RF amplifier operating in Class A with fixed emitter degeneration. Use Value: f_T = 100 MHz provides sufficient gain-bandwidth margin for flat response up to third harmonic.	Use Scenario: Adjustable 0–150 V, 100 mA bias supply for photomultiplier tube testing rigs. IC Role / Device Role / Timing Role: Series pass transistor in linear regulator topology with op-amp error amplifier feedback. Use Value: High V_CEO and stable h_FE enable precise regulation across full output range without foldback or thermal shutdown.

Audio Power Amplifier Pre-Driver

Industrial HV Switching Regulator

Use Scenario: Driving complementary NPN/PNP output stage in discrete 100W linear amplifier with ±70 V rails.

IC Role / Device Role / Timing Role: NPN predriver transistor providing current gain and voltage swing to reduce loading on preceding VAS stage.

Use Value: High h_FE and low V_CE(sat) maintain linearity at full output while minimizing thermal stress on output devices.

Use Scenario: High-side switch in 120 V DC–DC converter for factory automation control modules.

IC Role / Device Role / Timing Role: Medium-speed switching transistor controlling energy transfer into transformer primary with 20 µs pulse width.

Use Value: Verified t_on/t_off and robust V_CEO rating ensure reliable operation at 25 kHz switching frequency without snubber overdesign.

RF Signal Generator Output Stage

Test Equipment HV Bias Supply

Use Scenario: Final gain stage in 1–30 MHz bench signal generator delivering 20 dBm into 50 Ω load.

IC Role / Device Role / Timing Role: Linear RF amplifier operating in Class A with fixed emitter degeneration.

Use Value: f_T = 100 MHz provides sufficient gain-bandwidth margin for flat response up to third harmonic.

Use Scenario: Adjustable 0–150 V, 100 mA bias supply for photomultiplier tube testing rigs.

IC Role / Device Role / Timing Role: Series pass transistor in linear regulator topology with op-amp error amplifier feedback.

Use Value: High V_CEO and stable h_FE enable precise regulation across full output range without foldback or thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC3854	V_CEO = −160 V, I_C = −1.0 A, P_C = 10 W, h_FE = 120–240 - lower power and gain than 2SC4159E.	Not suitable for 100W predriver loads; limited to ≤50W amplifier stages or low-duty-cycle switching.	Select when lower cost and reduced thermal mass are prioritized over output capability.
MJE13009	V_CEO = −400 V, I_C = −12 A, P_C = 100 W, h_FE = 8–40 - higher voltage/current but much lower gain and slower switching.	Designed for SMPS main switches, not linear predrivers; requires external gain boosting and careful SOA management.	Select only for ultra-high-voltage flyback or forward converter primary switches where gain and speed are secondary.

Compared with 2SC3854 and MJE13009, the 2SC4159E offers balanced performance: sufficient V_CEO and I_C for 100W predrivers, usable h_FE for single-stage gain, and verified switching speed - making it uniquely suited for discrete AF power stages where thermal, gain, and speed constraints intersect.

Availability

2SC4159E is available at Aetrix Electronics and suitable for audio power amplifier predrivers, industrial HV switching regulators, and RF signal generator output stages requiring stable component supply and long-lifecycle support.

Supply support for 2SC4159E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power transistors, analog ICs, and optoelectronics before its acquisition by Panasonic in 2011; known for rugged, thermally optimized discrete devices.

The 2SC4159E belongs to SANYO's high-voltage NPN transistor family engineered for linear and switching applications in audio, industrial control, and test equipment - emphasizing thermal reliability, gain consistency, and package-level mounting simplicity.

FAQ

What is the maximum collector-emitter voltage rating for the 2SC4159E?

The 2SC4159E has a maximum collector-emitter voltage rating (V_CEO) of −160 V at T_a = 25 °C. This rating applies with the base open and defines the upper limit for safe DC or peak AC voltage across the collector and emitter terminals. Exceeding this value risks avalanche breakdown and permanent device failure. Derating is required at elevated ambient or case temperatures per the datasheet's V_CEO vs. T_j curve.

Does the 2SC4159E have a built-in base-emitter resistor or protection diode?

No, the 2SC4159E is a standard three-terminal NPN bipolar junction transistor with no integrated base-emitter resistor or protection diode. It requires external base current limiting and, where needed, a reverse-biased clamping diode across base-emitter to prevent V_BE exceedance beyond −6 V. The device relies on discrete external components for safe biasing and transient protection.

Can the 2SC4159E be used as a direct replacement for the 2SC4159 without suffix?

Yes, the 2SC4159E is the enhanced version of the original 2SC4159, sharing identical pinout, package (TO-220ML), absolute maximum ratings, and electrical characteristics. The "E" suffix denotes an updated manufacturing process with improved consistency in h_FE binning and tighter parameter distribution - fully backward compatible in both schematic and layout.

What is the thermal resistance from junction to case (R_θJC) for the 2SC4159E?

The 2SC4159E has a typical junction-to-case thermal resistance (R_θJC) of 1.67 °C/W, derived from P_C = 15 W at T_c = 25 °C and T_j(max) = 150 °C. This value assumes full metal-tab contact with a heatsink and is confirmed by the PC–Ta derating curve in the official SANYO datasheet No.2535. Actual R_θJC may vary slightly with mounting pressure and thermal interface material.

Is the 2SC4159E RoHS compliant?

The 2SC4159E was manufactured prior to RoHS enforcement deadlines and does not carry formal RoHS certification. It contains lead in the solder die-attach and leadframe plating, consistent with pre-2006 SANYO production standards. For new designs requiring RoHS compliance, consult Aetrix Electronics for qualified drop-in alternatives or re-engineered equivalents with documented exemption status.

2SC4159E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1.5 A

Voltage - Collector Emitter Breakdown (Max):: 160 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 300mA, 5V

Power - Max:: 15 W

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220ML

2SC4159E FAQ

1.How can I place an order for 2SC4159E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC4159E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC4159E reliable?

The price and inventory of 2SC4159E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC4159E is usually 5 days.

3.What payment methods are accepted for 2SC4159E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC4159E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC4159E?

2SC4159E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC4159E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC4159E?

For technical support, including 2SC4159E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC4159E requirements.

6.How does Aetrix verify that 2SC4159E is sourced from the original manufacturer or authorized distributors?

All 2SC4159E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC4159E meets industry standards.

7.What is the process for return or replacement of 2SC4159E?

All 2SC4159E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC4159E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC4159E part is unused and in its original packaging.

Return procedure for 2SC4159E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…