Toshiba Semiconductor and Storage 2SC4213-A(TE85L,F)

Overview

2SC4213-A(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is a silicon NPN epitaxial transistor designed for muting and switching functions in audio and signal path control circuits. It delivers high emitter-base voltage (VEBO = 25 V), low on-resistance (RON = 1 Ω typ. at IB = 5 mA), DC current gain of 200–1200, and transition frequency of 30 MHz - enabling fast, low-loss switching in compact consumer audio interfaces.

For engineers reviewing the 2SC4213-A(TE85L,F) datasheet, 2SC4213-A(TE85L,F) pinout, 2SC4213-A(TE85L,F) application, or 2SC4213-A(TE85L,F) equivalent, key selection criteria include its SC-70 package footprint, guaranteed hFE classification A (200–700), VCEO = 20 V rating, and verified switching times (ton = 160 ns, tf = 130 ns) under standard test conditions.

Technical Context

This transistor employs a PCT (Planar Collector Technology) process to achieve stable hFE across temperature and bias, with reverse hFE of 150 (typ.) at VCE = −2 V, IC = −4 mA - supporting bidirectional signal routing in analog mute paths. Its Cob = 4.8 pF (typ.) and fT = 30 MHz enable reliable operation up to mid-frequency audio band switching without parasitic resonance.

The device operates within a junction temperature range of −55°C to 150°C (Note 1), with PC = 200 mW when mounted on a defined FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.5 mm² × 3), making it suitable for thermally constrained PCB layouts in portable audio modules.

Key Specifications

Pinout & Package

2SC4213-A(TE85L,F) uses the JEITA-standard SC-70 package (Toshiba designation: 2-2E1A), a 3-pin SMT plastic package with gull-wing leads. Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector - confirmed per Toshiba's official marking diagram and package outline drawing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching applications.

Compared with BC846B,215 and MMBT3904LT1G, the 2SC4213-A(TE85L,F) uniquely combines high VEBO (25 V), reverse hFE (150 typ.), and tight hFE classification A - making it the only option among the three qualified for bidirectional analog muting in consumer audio systems with ±5 V rails.

Availability

2SC4213-A(TE85L,F) is available at Aetrix Electronics and suitable for audio muting, analog signal routing, and low-voltage power enable applications requiring stable component supply, consistent hFE binning, and JEITA-compliant SC-70 packaging.

Supply support for 2SC4213-A(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade qualification.

The 2SC4213-A(TE85L,F) belongs to Toshiba's legacy silicon NPN transistor family optimized for analog switching and muting in consumer audio, office equipment, and industrial control interfaces since 1987.

FAQ

What is the guaranteed hFE range for 2SC4213-A(TE85L,F)?

The 2SC4213-A(TE85L,F) is classified as hFE Group A, with a guaranteed DC current gain range of 200 to 700 at VCE = 2 V and IC = 4 mA. This binning ensures predictable base drive requirements across production lots. The 2SC4213-A(TE85L,F) does not carry the Group B (350–1200) classification. Designers should reference Toshiba's official datasheet revision dated 2021-06-25 for test conditions and statistical distribution.

Does 2SC4213-A(TE85L,F) support reverse-active mode operation?

Yes - the 2SC4213-A(TE85L,F) specifies reverse hFE = 150 (typ.) at VCE = −2 V and IC = −4 mA, confirming validated performance in emitter-follower or inverted-switch configurations. This capability is essential for certain analog muting topologies where the emitter is held at a higher potential than the base. The 2SC4213-A(TE85L,F)'s VEBO = 25 V rating further supports safe reverse-bias operation.

What is the maximum power dissipation for 2SC4213-A(TE85L,F) on a standard FR4 board?

The 2SC4213-A(TE85L,F) has a collector power dissipation (PC) of 200 mW when mounted on a defined FR4 test board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.5 mm² × 3). This rating applies under Note 1 conditions (ordering part number ending in LF(T)). Derating is required above Ta = 25°C - approximately 1.6 mW/°C reduction beyond 25°C ambient. The 2SC4213-A(TE85L,F)'s thermal resistance (RθJA) is not explicitly published but aligns with typical SC-70 packages.

Is 2SC4213-A(TE85L,F) RoHS compliant?

Yes - the 2SC4213-A(TE85L,F) complies with the EU RoHS Directive, as confirmed by Toshiba's environmental compliance documentation. The "(TE85L,F)" suffix indicates lead-free (Pb-free) plating and halogen-free molding compound. Customers must verify latest status via Toshiba's official product page or environmental reports, as compliance may depend on specific manufacturing lot and date code. The 2SC4213-A(TE85L,F) meets JESD204 and JEDEC standards for green packaging.

What is the switching speed performance of 2SC4213-A(TE85L,F)?

The 2SC4213-A(TE85L,F) achieves ton = 160 ns, tstg = 500 ns, and tf = 130 ns under duty cycle ≤ 2% test conditions. These values reflect measured performance at IC = 30 mA and IB = 3 mA, making it suitable for muting and signal gating up to ~2 MHz. The 2SC4213-A(TE85L,F)'s Cob = 4.8 pF (typ.) and fT = 30 MHz contribute to this speed profile, with minimal dependence on external compensation.