onsemi 2SC4399-4-TL-E
- Part No.:
- 2SC4399-4-TL-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
2SC4399-4-TL-E.pdf
- Description:
- TRANS NPN 20V 0.03A 3-MCP
- Quantity:
- Payment:

- Shipping:

Inventory:159,000
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Product details
Overview
2SC4399-4-TL-E from onsemi is an NPN epitaxial planar silicon RF transistor optimized for high-frequency general-purpose amplifier applications, featuring 25 dB typical power gain at 100 MHz, fT = 2.0 GHz (IC = 1 mA, VCE = 6 V), and ultrasmall MCP package (2.1 × 1.25 × 0.425 mm). It operates with VCEO = 20 V, IC = 30 mA, and PC = 150 mW, enabling compact RF front-end amplification in portable wireless modules.
For engineers reviewing the 2SC4399-4-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include its 2.0 GHz fT, 25 dB PG at 100 MHz, low noise figure of 3.0 dB, VCEO = 20 V rating, and MCP surface-mount footprint - all critical for UHF/VHF small-signal amplification stages requiring size-constrained, high-gain performance.
Technical Context
The 2SC4399-4-TL-E employs an epitaxial planar structure with optimized base width and emitter geometry to achieve high fT and stable hFE across operating current. Its RF performance is characterized using standardized 50 Ω test circuits with defined L1/L2/L3 inductor taps for reproducible S-parameter and admittance measurements at 1–100 MHz and 100 MHz.
Designed for Class-A small-signal amplification, it delivers consistent power gain and noise figure under VCE = 6 V bias, with hFE binned to rank "4" (hFE = 180–270 at IC = 1 mA, VCE = 6 V) per marking code. The device exhibits low rbb′Cc = 210 ps and Cre = 0.9–2.1 pF, supporting stable broadband operation up to 1 GHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| fT | 2.0 GHz - enables stable amplification up to ~1 GHz with usable gain margin |
| Power Gain (PG) | 25 dB typ @ 100 MHz - provides single-stage RF gain sufficient for receiver LNA or driver stages |
| Noise Figure (NF) | 3.0 dB typ @ 100 MHz - supports low-noise signal amplification in sensitive RF receivers |
| VCEO | 20 V - allows operation with common 12 V or 15 V RF supply rails plus headroom |
| IC max | 30 mA - sets maximum DC bias current for thermal-limited continuous operation |
| PC | 150 mW - defines absolute power dissipation limit at Ta = 25°C in MCP package |
| hFE rank | Rank 4 (180–270) - ensures predictable DC current gain for bias network design |
Pinout & Package
2SC4399-4-TL-E uses the ultrasmall surface-mount MCP (Mini-Ceramic Package) measuring 2.1 mm × 1.25 mm × 0.425 mm, designed for high-density RF PCB layouts and reflow-compatible assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control electrode | DC bias and RF input node; requires impedance-matched 50 Ω drive for optimal NF/PG |
| 2 (Emitter) | Current return path | AC-grounded via low-inductance bypass; critical for stable high-frequency operation |
| 3 (Collector) | Output terminal | RF output and DC supply node; connects to collector load in common-emitter configuration |
Key Features
| Feature | Design Value |
|---|---|
| High power gain | 25 dB typical at 100 MHz - reduces need for multi-stage amplification in space-constrained designs |
| Ultrasmall MCP package | 2.1 × 1.25 × 0.425 mm - enables miniaturized RF modules without sacrificing thermal or electrical performance |
| Low noise figure | 3.0 dB typical at 100 MHz - preserves signal integrity in receiver front-ends before analog-to-digital conversion |
| Binned hFE (Rank 4) | 180–270 @ IC = 1 mA - simplifies production-level bias network design with predictable DC operating point |
| High fT | 2.0 GHz - supports stable gain beyond UHF band, suitable for ISM 433/868/915 MHz systems |
Applications
| Wireless Remote Controls | ISM Band Transceivers |
|---|---|
Use Scenario: Sub-1 GHz remote control transmitters in consumer electronics requiring low-power, compact RF amplification. IC Role / Device Role / Timing Role: Small-signal RF amplifier stage boosting baseband-modulated carrier prior to antenna coupling. Use Value: 25 dB PG enables >10 m range with 3.3 V supply and minimal external components, leveraging MCP footprint for button-cell-sized PCBs. | Use Scenario: Receive-path LNA in 868 MHz European ISM band smart metering nodes. IC Role / Device Role / Timing Role: Low-noise pre-amplifier between antenna and downconversion mixer. Use Value: 3.0 dB NF and 2.0 GHz fT ensure adequate sensitivity at 868 MHz while maintaining stability against oscillation in unshielded environments. |
| Portable Audio Transmitters | RFID Reader Front-Ends |
Use Scenario: Analog audio transmission from portable devices to wireless headphones using 2.4 GHz ISM band. IC Role / Device Role / Timing Role: Driver amplifier in transmitter chain, interfacing modulator output to power amplifier input. Use Value: Rank 4 hFE and 20 V VCEO allow robust biasing across battery voltage drop (3.6–4.2 V), minimizing gain variation during discharge. | Use Scenario: 13.56 MHz HF RFID reader modules needing reliable signal amplification for tag interrogation. IC Role / Device Role / Timing Role: High-linearity small-signal amplifier in reader's receive channel. Use Value: Low rbb′Cc (210 ps) and controlled Cre (0.9–2.1 pF) support stable 13.56 MHz operation with minimal phase distortion in bidirectional communication. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF small-signal amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SC5004-TL-E | fT = 3.0 GHz, NF = 2.5 dB, VCEO = 12 V, same MCP package | Better noise performance but lower breakdown voltage limits supply rail flexibility | Select when NF < 2.5 dB is required and VCC ≤ 12 V; verify layout stability at 3 GHz |
| MCH4015-TL-E | fT = 1.8 GHz, PG = 22 dB, VCEO = 25 V, same pinout, slightly larger 2.3 × 1.3 mm package | Higher voltage tolerance and improved ruggedness for industrial environments | Select when VCC > 20 V or enhanced ESD/robustness is needed; board area increase < 10% |
Compared with 2SC4399-4-TL-E, the 2SC5004-TL-E offers superior high-frequency noise performance but reduced voltage headroom, while the MCH4015-TL-E trades minor gain and fT reduction for higher VCEO and ruggedness - making each suitable for distinct RF subsystem priorities: sensitivity, supply flexibility, or reliability.
Availability
2SC4399-4-TL-E is available at Aetrix Electronics and suitable for wireless remote controls, ISM band transceivers, and portable audio transmitters requiring stable component supply, consistent hFE binning, and ultrasmall RF transistor packaging.
Supply support for 2SC4399-4-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud power applications.
The 2SC4399-4-TL-E belongs to onsemi's legacy RF bipolar transistor product line, engineered specifically for cost-sensitive, size-constrained UHF/VHF small-signal amplification in consumer and industrial wireless equipment.
FAQ
What is the hFE range for 2SC4399-4-TL-E?
The 2SC4399-4-TL-E is binned to hFE Rank 4, specifying a DC current gain of 180–270 at IC = 1 mA and VCE = 6 V. This tight binning ensures predictable bias point stability across production lots, directly supporting repeatable RF amplifier design without iterative tuning. The hFE value is marked on the device body and verified per onsemi's 2SC4399/D datasheet Rev. 0.
Does 2SC4399-4-TL-E support 50 Ω input/output matching?
Yes, the 2SC4399-4-TL-E is characterized using standardized 50 Ω test circuits per its datasheet, including defined L1/L2/L3 inductor configurations for accurate y-parameter measurement. While not inherently 50 Ω matched, its low rbb′Cc (210 ps) and controlled Cre enable straightforward external matching networks for 50 Ω systems - a key design feature confirmed in the NF/PG test circuit diagrams of the 2SC4399/D document.
What is the maximum operating temperature for 2SC4399-4-TL-E?
The 2SC4399-4-TL-E has a maximum junction temperature (Tj) of +150°C and a storage temperature range of –55°C to +150°C. Its thermal resistance θJA is not explicitly specified in the datasheet, but the 150 mW PC rating at Ta = 25°C implies safe operation up to ~85°C ambient with standard PCB copper pour - validated by the derating curve PC vs. Ta in the 2SC4399/D datasheet.
Is 2SC4399-4-TL-E RoHS compliant?
Yes, 2SC4399-4-TL-E is RoHS compliant and lead-free, consistent with onsemi's environmental compliance program. The "-TL-E" suffix denotes tape-and-reel packaging with lead-free finish, and the device meets EU RoHS Directive 2011/65/EU requirements as documented in onsemi's material declarations and product change notifications for the 2SC4399 family.
Can 2SC4399-4-TL-E be used in Class AB amplifier configurations?
The 2SC4399-4-TL-E is characterized and optimized for Class-A small-signal amplification, with published PG, NF, and admittance data at IC = 1 mA and VCE = 6 V. While it can operate in Class AB, doing so requires careful thermal and linearity validation - the datasheet does not provide harmonic distortion, IM3, or efficiency data for such modes, and its fT/NF trade-offs are tuned for linear low-power operation, not power efficiency.
2SC4399-4-TL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 30 mA
- Voltage - Collector Emitter Breakdown (Max):
- 20 V
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 90 @ 1mA, 6V
- Power - Max:
- 150 mW
- Frequency - Transition:
- 320MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-MCP
2SC4399-4-TL-E FAQ
1.How can I place an order for 2SC4399-4-TL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SC4399-4-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SC4399-4-TL-E reliable?
The price and inventory of 2SC4399-4-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC4399-4-TL-E is usually 5 days.
3.What payment methods are accepted for 2SC4399-4-TL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC4399-4-TL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SC4399-4-TL-E?
2SC4399-4-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SC4399-4-TL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SC4399-4-TL-E?
For technical support, including 2SC4399-4-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC4399-4-TL-E requirements.
6.How does Aetrix verify that 2SC4399-4-TL-E is sourced from the original manufacturer or authorized distributors?
All 2SC4399-4-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC4399-4-TL-E meets industry standards.
7.What is the process for return or replacement of 2SC4399-4-TL-E?
All 2SC4399-4-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC4399-4-TL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SC4399-4-TL-E part is unused and in its original packaging.
Return procedure for 2SC4399-4-TL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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