onsemi 2SC4487S-AN

Overview

2SC4487S-AN from onsemi is an NPN bipolar junction transistor (BJT) designed for high-current switching applications, featuring a 50 V V_CEO, 3 A continuous collector current, 0.2–0.5 V V_CE(sat) at I_C = 2 A / I_B = 100 mA, 150 MHz f_T, and SC-71 (NMP) surface-mount package. It serves as a power switch in DC-DC converters, motor drivers, and LED lighting ballasts.

For engineers reviewing the 2SC4487S-AN datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, terminal mapping, thermal limits, switching timing data, and validated alternative parts for industrial power control designs.

Technical Context

The 2SC4487S-AN employs FBET and MBIT fabrication processes to achieve low saturation voltage and wide safe operating area (ASO), supporting robust pulsed operation up to 6 A (I_CP). Its h_FE ranges from 35 at I_C = 3 A to 140–400 at I_C = 100 mA, enabling both linear amplification and saturated switching modes.

With 39 pF typical C_ob at V_CB = −10 V and fast switching metrics-t_on = 70 ns, t_stg = 450–650 ns, t_f = 35 ns-the device meets requirements for medium-frequency (<200 MHz) switching circuits where turn-off delay and storage time are critical.

Key Specifications

Pinout & Package

Package: SC-71 (JEITA/ JEDEC), also designated NMP (Taping); 3-pin surface-mount plastic package with 2.54 mm lead pitch, 0.275 g mass, and Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power switching applications.

Compared with MJD127G and SS8050D, the 2SC4487S-AN uniquely balances 50 V/3 A capability, sub-0.5 V saturation, and SC-71 manufacturability-making it optimal for cost-sensitive, medium-power industrial switching where thermal performance and SOA margins are prioritized over ultra-high voltage or miniaturization.

Availability

2SC4487S-AN is available at Aetrix Electronics and suitable for DC-DC converters, LED drivers, brushed motor controls, and relay interface circuits requiring stable component supply, consistent parametric binning (S-rank h_FE = 140–280), and RoHS-compliant taping.

Supply support for 2SC4487S-AN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The 2SC4487S-AN belongs to onsemi's legacy bipolar power transistor family engineered for rugged, high-reliability switching in industrial power conversion and control systems-not consumer-grade signal amplification.

FAQ

What is the h_FE range for the 2SC4487S-AN, and how does it differ from the T-rank variant?

The 2SC4487S-AN has a DC current gain (h_FE) range of 140–280 at V_CE = 2 V and I_C = 100 mA, per its S-rank classification. The T-rank variant (2SC4487T-AN) specifies 200–400 under identical test conditions. Both share identical absolute maximum ratings, thermal characteristics, and pinout-only h_FE binning differs. Designers selecting the 2SC4487S-AN benefit from tighter gain consistency for predictable base drive sizing.

Is the 2SC4487S-AN suitable for linear amplifier applications?

The 2SC4487S-AN is not optimized for linear amplification due to its low V_CE(sat) focus and limited h_FE linearity above 1 A. Its datasheet emphasizes switching performance (t_on, t_f, SOA), and h_FE drops to 35 at I_C = 3 A-indicating strong gain compression. For linear use, the 2SC4487S-AN should be restricted to Class-A or AB operation below 500 mA with careful thermal management; otherwise, dedicated RF or audio transistors are preferred.

What is the maximum junction temperature and thermal resistance for the 2SC4487S-AN?

The 2SC4487S-AN has a maximum junction temperature (T_j) of 150°C and a specified storage temperature range of −55°C to +150°C. While the datasheet does not list θ_JA or θ_JC explicitly, the SC-71 package's 1 W P_C rating at T_a = 25°C implies a typical θ_JA ≈ 125°C/W with standard 1-in² 2-oz copper. Derating is required above 25°C ambient-e.g., P_C drops to ~0.5 W at T_a = 75°C per the PC–Ta curve.

Does the 2SC4487S-AN have built-in ESD or overvoltage protection?

No, the 2SC4487S-AN is a bare bipolar transistor without integrated ESD protection diodes or clamp structures. Its absolute maximum ratings define hard limits: V_CEO = 50 V, V_CB0 = 60 V, and V_EB0 = 6 V. External protection-such as base-emitter Zener clamps or RC snubbers across collector-emitter-is required in inductive switching applications to prevent secondary breakdown or ESD-induced latch-up.

How does the 2SC4487S-AN compare to the complementary PNP 2SA1707S-AN in terms of key specs?

The 2SC4487S-AN (NPN) and 2SA1707S-AN (PNP) share identical package (SC-71), power rating (1 W), junction temperature (150°C), and SOA curves-but differ in polarity-specific parameters: V_CEO = 50 V / −50 V, I_C = 3 A / −3 A, V_CE(sat) = 0.2–0.5 V / −0.35–−0.7 V, and f_T = 150 MHz / 120 MHz. This matched pair enables balanced push-pull or H-bridge designs with symmetrical switching behavior and thermal tracking.