onsemi 2SC4614T-AN

Overview

2SC4614T-AN from ON Semiconductor is an NPN bipolar junction transistor designed for high-voltage switching applications, featuring a collector-to-emitter breakdown voltage of –160 V, continuous collector current rating of –1.5 A, and low saturation voltage of –130 mV at IC = –500 mA / IB = –50 mA. It employs the MBIT process for enhanced ruggedness and is housed in the SC-71 (NMP) surface-mount package.

For engineers reviewing the 2SC4614T-AN datasheet, pinout, applications, or equivalent options, key selection criteria include its high V_CEO, fast switching times (t_on = 40 ns, t_f = 40–80 ns), low V_CE(sat), and classification in the T-rank h_FE bin (200–400 at I_C = –100 mA).

Technical Context

The 2SC4614T-AN is a discrete NPN BJT optimized for medium-power linear and switching operation in DC-DC converters and relay drivers. Its design emphasizes high breakdown margin (V_CBO = –180 V), thermal robustness (T_j = 150 °C), and stable gain across temperature (h_FE tested at –25°C, 25°C, and 75°C).

It operates with fixed-base drive topology, exhibits f_T = 120 MHz for moderate RF capability, and delivers predictable saturation behavior under pulsed conditions (I_CP = –2.5 A, 10 ms pulse width). The device is not intended for RF amplification but supports fast transient response in hard-switched topologies.

Key Specifications

Pinout & Package

Package: SC-71 (JEITA/ JEDEC designation), also labeled NMP(Taping); molded plastic surface-mount package with gull-wing leads, 0.275 g mass, footprint compatible with automated pick-and-place.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with 2SC4614S-AN and MJD127G, the 2SC4614T-AN provides superior voltage margin and tighter h_FE control-critical for unbuffered microcontroller drive and high-reliability industrial switching where gain variation must be minimized.

Availability

2SC4614T-AN is available at Aetrix Electronics and suitable for industrial motor controls, DC-DC converter designs, and relay interface modules requiring stable component supply and long-term manufacturability.

Supply support for 2SC4614T-AN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (now part of onsemi) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud power markets.

The 2SC4614T-AN belongs to ON Semiconductor's general-purpose high-voltage BJT product line, engineered for reliability in industrial control, power conversion, and ruggedized interface circuits where parametric consistency and SOA integrity are essential.

FAQ

What is the maximum allowable collector current for continuous operation of the 2SC4614T-AN?

The 2SC4614T-AN has a continuous collector current rating (I_C) of –1.5 A at T_A = 25°C. Derating is required above 25°C ambient per the PC–Ta curve; at 75°C, usable I_C drops to approximately –0.9 A. Operation beyond this limit risks thermal runaway or bond-wire failure. Always verify PCB copper area and airflow in the final layout for the 2SC4614T-AN.

Does the 2SC4614T-AN support pulsed operation, and what are its pulse ratings?

Yes, the 2SC4614T-AN supports pulsed collector current up to –2.5 A (I_CP) with pulse width ≤10 ms and duty cycle ≤10%. This enables short-duration overload handling in motor start-up or surge suppression. The 2SC4614T-AN datasheet specifies these limits under single-pulse test conditions and requires strict adherence to the SOA graph to avoid secondary breakdown.

How does the T-rank h_FE binning affect circuit design for the 2SC4614T-AN?

The T-rank bin guarantees h_FE between 200 and 400 at V_CE = –5 V and I_C = –100 mA. This allows precise base resistor calculation without worst-case margining-e.g., for I_C = –1 A, I_B can be set to –5 mA instead of –10 mA. That directly improves drive efficiency and reduces MCU GPIO loading in the 2SC4614T-AN application.

Is the 2SC4614T-AN RoHS-compliant and lead-free?

Yes, the 2SC4614T-AN is marked "Pb Free" in the ordering information and complies with RoHS Directive 2011/65/EU. The device uses matte tin-plated gull-wing leads and halogen-free molding compound. Full compliance documentation, including substance declarations and test reports, is available for the 2SC4614T-AN through onsemi's quality portal.

What is the recommended PCB layout practice for thermal management of the 2SC4614T-AN?

For reliable operation above 500 mA, the 2SC4614T-AN requires ≥100 mm² of 1 oz copper connected to Pin 2 (Collector) as a thermal pad, with ≥2 thermal vias to inner/ground planes. The SC-71 package's low thermal resistance (R_θJA ≈ 200°C/W) depends heavily on this layout. Avoid placing heat-sensitive components within 3 mm of the 2SC4614T-AN footprint.